Si3459DV
New Product
Vishay Siliconix
P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
–60
0.310 @ V
GS
= –4.5 V
r
DS(on)
(W)
0.220 @ V
GS
= –10 V
I
D
(A)
"2.2
"1.9
(4) S
TSOP-6
Top View
1
6
(3) G
3 mm
2
5
3
4
2.85 mm
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a, b
150 C)
Pulsed Drain Current
Single Avalanche Current (L = 0.1 mH)
Maximum Power Dissipation
a, b
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
I
D
T
A
= 70_C
I
DM
I
AS
P
D
T
J
, T
stg
Symbol
V
DS
V
GS
Limit
–60
"20
"2.2
"1.7
"10
–7
2
Unit
V
A
W
1.3
–55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Lead
Notes
a. Surface Mounted on FR4 Board.
b. t
v
5 sec
Document Number: 70877
S-49635—Rev. B, 29-Nov-99
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FaxBack 408-970-5600
t
v
5 sec
Steady State
Steady State
Symbol
R
thJA
R
thJL
Typical
Maximum
62.5
Unit
_C/W
106
35
2-1
Si3459DV
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State
Drain Source On State Resistance
a
Forward Transconductance
a
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS( )
DS(on)
g
fs
V
DS
= 0 V, I
D
= –250
mA
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= –48 V, V
GS
= 0 V
V
DS
= –48 V, V
GS
= 0 V, T
J
= 150_C
V
DS
= –5 V, V
GS
= –10 V
V
GS
= –10 V, I
D
= –2.2 A
V
GS
= –4.5 V, I
D
= –1.9 A
V
DS
= –4.5 V, I
D
= –2.2 A
–10
0.190
0.265
4
0.220
0.310
W
S
–60
V
–1
"100
–1
–50
nA
mA
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= –30 V, R
L
= 30
W
30 V,
I
D
^
–1 A, V
GEN
= –10 V R
G
= 6
W
1A
10 V,
V
DS
= –30 V V
GS
= –10 V I
D
= –2.2 A
30 V,
10 V,
22
7
1.6
1.2
8
12
23
12
16
24
ns
45
25
14
nC
C
Source-Drain Rating Characteristics
b
Continuous Current
Pulsed Current
Diode Forward Voltage
a
Source-Drain Reverse Recovery Time
I
S
I
SM
V
SD
t
rr
I
S
= –1.7 A, V
GS
= 0 V
I
F
= –1.7 A, di/dt = 100 A/ms
–0.8
50
–1.7
A
–10
–1.2
90
V
ns
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
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FaxBack 408-970-5600
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Document Number: 70877
S-49635—Rev. B, 29-Nov-99
Si3459DV
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
V
GS
= 10 thru 5 V
8
I
D
– Drain Current (A)
I
D
– Drain Current (A)
8
10
T
C
= –55_C
25_C
125_C
Vishay Siliconix
Transfer Characteristics
6
4V
6
4
4
2
3V
2
0
0
1
2
3
4
0
0
1
2
3
4
5
6
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.6
600
Capacitance
r
DS(on)
– On-Resistance (
W
)
0.5
C – Capacitance (pF)
500
C
iss
400
0.4
V
GS
= 4.5 V
V
GS
= 10 V
0.2
0.3
300
200
C
oss
0.1
100
C
rss
0
0
2
4
6
8
10
0
0
10
20
30
40
50
60
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
10
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 30 V
I
D
= 2.2 A
2.0
1.8
r
DS(on)
– On-Resistance (
W)
(Normalized)
1.6
1.4
1.2
1.0
0.8
0.6
0
0
2
4
6
8
0.4
–50
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 2.2 A
8
6
4
2
–25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Document Number: 70877
S-49635—Rev. B, 29-Nov-99
www.vishay.com
S
FaxBack 408-970-5600
2-3
Si3459DV
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
10
0.6
On-Resistance vs. Gate-to-Source Voltage
0.5
I
S
– Source Current (A)
T
J
= 150_C
r
DS(on)
– On-Resistance (
W
)
0.4
0.3
I
D
= 2.2 A
0.2
T
J
= 25_C
0.1
1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
0.6
I
D
= 250
mA
0.4
V
GS(th)
Variance (V)
20
25
Single Pulse Power
0.2
Power (W)
15
0.0
10
–0.2
5
–0.4
–50
0
–25
0
25
50
75
100
125
150
0.001
0.01
0.1
1
Time (sec)
10
100
600
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 106_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
10
100
600
Square Wave Pulse Duration (sec)
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S
FaxBack 408-970-5600
2-4
Document Number: 70877
S-49635—Rev. B, 29-Nov-99
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