SemiWell
Semiconductor
SBN13002
High Voltage Fast-Switching
NPN Power Transistor
Features
◆
◆
High Voltage
High Speed switching
General Description
This device is designed high voltage and high speed
switching characteristic required to lighting system, switching
Regulator and inverter motor controls.
TO-92
Absolute Maximum Ratings (T
J
= 25℃
unless otherwise specified)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Parameter
Collector-Base Voltage(V
BE
=0 )
Collector-Emitter Voltage(I
B
=0 )
Emitter-Base Voltage(I
C
=0 )
Collector Current
Total Dissipation at T
C
= 25℃
Operation Junction Temperature
Storage Temperature
Ratings
700
450
9
0.2
0.6
- 40 ~ 150
- 40 ~ 150
Units
V
V
V
A
W
℃
℃
Oct 2008. Rev. 1
1/3
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved
SBN13002
Electrical Characteristics ( TC = 25
℃
Unless otherwise noted)
Ratings
Symbol
Items
Conditions
Min
BV
CEO
BV
CBO
Collector-Emitter Voltage
Collector-Base Voltage
Collect-Emitter Saturation
Typ.
Max
V
V
0.45
V
1.0
0.9
V
1.0
13
5
1
3
0.8
㎲
㎲
26
Unit
Ic=5mA, Ib=0
Ic=500uA, Ie=0
Ic=0.05A, Ib=0.01A
Ic=0.1A, Ib=0.02A
Ic=0.05A, Ib=0.01A
Ic=0.1A, Ib=0.01A
Vce = 10V, Ic = 100mA
450
700
V
CE(sat)
Voltage
Base-Emitter Saturation
V
BE(sat)
Voltage
DC Current Gane
h
FE
t
STG
tf
Vce = 10V, Ic = 280mA
Storage Time
Fall Time
V
CC
= 5V,
V
CC
= 5V,
I
C
= 0.5
I
C
= 0.5
※
Hfe Sorting condition : V
ce = 10V, Ic = 100mA
Grade
Hfe
SBN13002-1
13 ~ 20
SBN13002-2
18 ~ 26
Electrical Characteristics Curve
Fig. 1 DC current Gain
Fig. 2 Saturation Voltage
2/3
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