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SBL30U100

产品描述Voltage 100v 30.0 Amp Low VF Trench MOS Barrier Schottky Recifier
产品类别分立半导体    二极管   
文件大小147KB,共2页
制造商SECOS
官网地址http://www.secosgmbh.com/
标准
下载文档 详细参数 全文预览

SBL30U100概述

Voltage 100v 30.0 Amp Low VF Trench MOS Barrier Schottky Recifier

SBL30U100规格参数

参数名称属性值
是否Rohs认证符合
厂商名称SECOS
包装说明R-PSFM-T3
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性HIGH RELIABILITY, LOW POWER LOSS
应用GENERAL PURPOSE
外壳连接CATHODE
配置COMMON CATHODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.74 V
JEDEC-95代码TO-220AB
JESD-30 代码R-PSFM-T3
最大非重复峰值正向电流200 A
元件数量2
相数1
端子数量3
最高工作温度150 °C
最低工作温度-40 °C
最大输出电流15 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
最大重复峰值反向电压100 V
最大反向电流150 µA
表面贴装NO
技术SCHOTTKY
端子形式THROUGH-HOLE
端子位置SINGLE

文档预览

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SBL30U100
Elektronische Bauelemente
Voltage 100V 30.0 Amp
Low VF Trench MOS Barrier Schottky Rectifier
RoHS Compliant Product
A suffix of “-C” specifies halogen free
TO-220
FEATURES
Trench MOS Schottky technology
Low forward voltage drop, low power losses.
High current capability
High reliability
High surge current capability
Epitaxial construction
B
N
D
E
M
P
H
J
K
L
Millimeter
Min.
Max.
14.22
16.51
9.65
10.67
12.50
14.75
3.56
4.90
0.51
1.45
2.03
2.92
0.31
0.76
3.5
4.5
A
O
C
G
F
REF.
J
K
L
M
N
O
P
Millimeter
Min.
Max.
0.7
1.78
0.38
1.02
2.39
2.69
2.50
3.43
3.10
4.09
8.38
9.65
0.89
1.45
MECHANICAL DATA
Case: Molded plastic
Epoxy: UL94V-0 rate flame retardant
Lead: Lead solderable per MIL-STD-202
method 208 guaranteed
Polarity: As Marked
Mounting position: Any
Weight: 1.98 g (Approximate)
L
REF.
A
B
C
D
E
F
G
H
1
3
2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25° ambient temperature unless otherwise s pecified. Single phase half wave, 60Hz, resistive or inductive load.
C
For capacitive load, de-rate current by 20%.)
Parameter
Maximum Recurrent Peak Reverse Voltage
Working Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current
Voltage Rate of Chance (Rated V
R
)
Typical Thermal Resistance
Operating and Storage Temperature Range
(Per Leg)
(Per Device)
Symbol
V
RRM
V
RSM
V
DC
I
F
I
FSM
dv/dt
R
θ
JC
T
J
,T
STG
Rating
100
100
100
15
30
200
10000
2
-40~150
Unit
V
V
V
A
A
V /
µs
° /W
C
°
C
Peak Forward Surge Current, 8.3 ms single half sine-wave
ELECTRICAL CHARACTERISTICS
Parameter
Maximum Instantaneous Forward
Voltage
Maximum DC Reverse Current
2
at Rated DC Blocking Voltage
Typical Junction Capacitance
1
Symbol
Typ.
0.45
0.61
0.71
0.66
-
-
630
Max.
0.48
0.64
0.74
-
0.15
10
-
Unit
V
Test Condition
I
F
= 3A, T
J
= 25°
C
I
F
= 10A, T
J
= 25°
C
I
F
= 15 A, T
J
= 25°
C
I
F
= 15 A, T
J
= 125°
C
C
T
J
=25°
T
J
=100°
C
V
F
I
R
C
J
mA
pF
NOTES:
1. Measured at 1MHz and applied reverse voltage of 5.0V D.C.
2. Pulse Test:Pulse Width = 300
µs,
Duty Cycle
2.0%.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
22-May-2013 Rev.A
Page 1 of 2

 
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