电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

SBL20U60F

产品描述Voltage 60V,20.0 AMP Low VF Planar MOS Barrier Schottky Rectifier
产品类别分立半导体    二极管   
文件大小99KB,共2页
制造商SECOS
官网地址http://www.secosgmbh.com/
下载文档 详细参数 全文预览

SBL20U60F概述

Voltage 60V,20.0 AMP Low VF Planar MOS Barrier Schottky Rectifier

SBL20U60F规格参数

参数名称属性值
厂商名称SECOS
包装说明R-PSFM-T3
Reach Compliance Codecompli
ECCN代码EAR99
其他特性HIGH RELIABILITY
应用GENERAL PURPOSE
外壳连接ISOLATED
配置COMMON CATHODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.6 V
JEDEC-95代码TO-220AB
JESD-30 代码R-PSFM-T3
最大非重复峰值正向电流150 A
元件数量2
相数1
端子数量3
最高工作温度150 °C
最低工作温度-40 °C
最大输出电流10 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
最大重复峰值反向电压60 V
最大反向电流300 µA
表面贴装NO
技术SCHOTTKY
端子形式THROUGH-HOLE
端子位置SINGLE

文档预览

下载PDF文档
SBL20U60F
Elektronische Bauelemente
Voltage 60V,20.0 Amp
Low VF Planar MOS Barrier Schottky Rectifier
RoHS Compliant Product
A suffix of “-C” specifies halogen free
ITO-220
FEATURES
Planar
MOS Schottky technology
Low forward voltage drop
High current capability
High reliability
High surge current capability
Epitaxial construction
B
N
D
E
M
A
MECHANICAL DATA
Case: Molded plastic
Epoxy: UL94V-0 rate flame retardant
Lead: Lead solderable per MIL-STD-202
method 208 guaranteed
Polarity: As Marked
Mounting position: Any
Weight: 1.98 g (Approximate)
H
J
K
L
Millimeter
Min.
Max.
14.60
15.70
9.50
10.50
12.60
14.00
4.30
4.70
2.30
3.2
2.30
2.90
0.30
0.75
C
G
F
REF.
H
J
K
L
M
N
Millimeter
Min.
Max.
2.70
4.00
0.90
1.50
0.50
0.90
2.34
2.74
2.40
3.00
φ
3.0
φ
3.4
L
REF.
1
3
2
A
B
C
D
E
F
G
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25° ambient temperature unless otherwise s pecified. Single phase half wave, 60Hz, resistive or inductive load.
C
For capacitive load, de-rate current by 20%.)
Parameter
Maximum Recurrent Peak Reverse Voltage
Working Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current
Voltage Rate of Chance (Rated V
R
)
Typical Thermal Resistance
Operating and Storage Temperature Range
(Per Leg)
(Per Device)
Symbol
V
RRM
V
RSM
V
DC
I
F
I
FSM
dv/dt
R
θ
JC
T
J
,T
STG
Rating
60
60
60
10
20
150
10000
4
-40~150
Unit
V
V
V
A
A
V /
µs
° /W
C
°
C
Peak Forward Surge Current, 8.3 ms single half sine-wave
ELECTRICAL CHARACTERISTICS
Parameter
Maximum Instantaneous Forward
Voltage
Maximum DC Reverse Current
2
at Rated DC Blocking Voltage
Typical Junction Capacitance
1
Symbol
Typ.
0.38
0.44
0.56
0.54
-
-
320
Max.
0.41
0.49
0.6
-
0.3
15
-
Unit
V
Test Condition
I
F
= 3A, T
J
= 25°
C
I
F
= 5A, T
J
= 25°
C
I
F
= 10A, T
J
= 25°
C
I
F
= 10A, T
J
= 125°
C
C
T
J
=25°
T
J
=100°
C
V
F
I
R
C
J
mA
pF
NOTES:
1. Measured at 1MHz and applied reverse voltage of 5.0V D.C.
2. Pulse Test:Pulse Width = 300
µs,
Duty Cycle
2.0%.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
14-Jun-2013 Rev. A
Page 1 of 2

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 534  1958  2011  607  1913  23  31  51  6  21 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved