SBL2030PT, SBL2040PT
Vishay General Semiconductor
Dual Common-Cathode Schottky Rectifier
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
3
2
1
• High frequency operation
• Solder dip 260 °C, 40 s
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
20 A
TO-247AD (TO-3P)
PIN 1
PIN 3
PIN 2
CASE
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
max.
30 V, 40 V
250 A
0.55 V
125 °C
MECHANICAL DATA
Case:
TO-247AD (TO-3P)
Epoxy meets UL 94 V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current (Fig. 1)
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load per diode
Operating junction and storage temperature range
SYMBOL
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
SBL2030PT
30
21
30
20
250
- 40 to + 125
SBL2040PT
40
28
40
UNIT
V
V
V
A
A
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward
voltage per diode
(1)
Maximum instantaneous reverse
current at rated DC blocking
voltage per diode
(1)
TEST CONDITIONS
10 A
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
F
SBL2030PT
0.55
1.0
50
SBL2040PT
UNIT
V
I
R
mA
Note
(1)
Pulse test: 300 µs pulse width, 1 % duty cycle
Document Number: 88728
Revision: 06-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
SBL2030PT, SBL2040PT
Vishay General Semiconductor
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Thermal resistance from junction to case per diode
SYMBOL
R
θJC
SBL2030PT
1.5
SBL2040PT
UNIT
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
TO-247AD
PREFERRED P/N
SBL2030PT-E3/45
UNIT WEIGHT (g)
6.13
PACKAGE CODE
45
BASE QUANTITY
30/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
25
22.5
100
Resistive or Inductive Load
Instantaneous Forward Current (A)
Average Forward Current (A)
20
17.5
15
12.5
10
7.5
5
2.5
0
0
50
100
150
T
J
= 125 °C
10
Pulse
Width
= 300
µs
1
%
Duty Cycle
T
J
= 25 °C
1
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
Case Temperature (°C)
Instantaneous Forward
Voltage
(V)
Figure 1. Forward Current Derating Curve
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
300
100
T
J
= T
J
Max.
8.3
ms Single Half Sine-Wave
250
Instantaneous Reverse Current (mA)
Peak Forward Surge Current (A)
10
T
J
= 125 °C
1
T
J
= 75 °C
0.1
200
150
100
50
0.01
T
J
= 25 °C
0
1
10
100
0.001
0
20
40
60
80
100
Number
of Cycles at 60 Hz
Percent of Rated Peak Reverse
Voltage
(%)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Figure 4. Typical Reverse Characteristics Per Diode
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 88728
Revision: 06-Aug-10
SBL2030PT, SBL2040PT
Vishay General Semiconductor
10 000
100
Transient Thermal Impedance (°C/W)
100
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
10
1000
1
100
0.1
1
10
0.1
0.01
0.1
1
10
100
Reverse
Voltage
(V)
t - Pulse Duration (s)
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-247AD (TO-3P)
0.245 (6.2)
0.225 (5.7)
0.645 (16.4)
0.625 (15.9)
0.323 (8.2)
0.313 (7.9)
0.203 (5.16)
0.193 (4.90)
30°
0.170
(4.3)
0.840 (21.3)
0.820 (20.8)
0.142 (3.6)
0.138 (3.5)
10° TYP.
Both Sides
0.078 (1.98) REF.
10
1
2
3
0.086 (2.18)
0.076 (1.93)
0.127 (3.22)
0.118 (3.0)
0.108 (2.7)
1° REF.
Both Sides
0.160 (4.1)
0.140 (3.5)
0.795 (20.2)
0.775 (19.6)
0.117 (2.97)
0.225 (5.7)
0.205 (5.2)
PIN 1
PIN 3
0.048 (1.22)
0.044 (1.12)
0.030 (0.76)
0.020 (0.51)
PIN 2
CASE
Document Number: 88728
Revision: 06-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
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Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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