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SBL10L25_08

产品描述10 A, 25 V, SILICON, RECTIFIER DIODE, TO-220AC
产品类别半导体    分立半导体   
文件大小133KB,共5页
制造商Vishay(威世)
官网地址http://www.vishay.com
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SBL10L25_08概述

10 A, 25 V, SILICON, RECTIFIER DIODE, TO-220AC

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SBL10L25, SBLF10L25, SBLB10L25
www.vishay.com
Vishay General Semiconductor
Low V
F
Schottky Barrier Rectifier
FEATURES
TO-220AC
ITO-220AC
• Power pack
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Very low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AC and ITO-220AC package)
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
2
1
SBL10L25
PIN 1
PIN 2
2
SBLF10L25
PIN 1
1
CASE
PIN 2
TO-263AB
K
2
1
SBLB10L25
PIN 1
PIN 2
K
HEATSINK
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, and polarity protection application.
MECHANICAL DATA
Case:
TO-220AC, ITO-220AC, TO-263AB
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
max.
Package
Diode variations
10 A
25 V
240 A
0.35 V
150 °C
TO-220AC, ITO-220AC, TO-263AB
Single
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
C
= 135 °C
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load
Peak repetitive reverse surge current at t
p
= 2.0 μs, 1 kHz
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min
SYMBOL
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
I
RRM
dV/dt
T
J
, T
STG
V
AC
VALUE
25
18
25
10
240
1.0
10 000
- 65 to + 150
1500
V/μs
°C
V
A
V
UNIT
Revision: 09-Aug-13
Document Number: 88723
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

SBL10L25_08相似产品对比

SBL10L25_08 SBLB10L25-E3/45 SBLB10L25HE3/45
描述 10 A, 25 V, SILICON, RECTIFIER DIODE, TO-220AC 10 A, 25 V, SILICON, RECTIFIER DIODE, TO-263AB 10 A, 25 V, SILICON, RECTIFIER DIODE, TO-263AB
是否无铅 - 不含铅 不含铅
是否Rohs认证 - 符合 符合
厂商名称 - Vishay(威世) Vishay(威世)
零件包装代码 - D2PAK D2PAK
包装说明 - R-PSSO-G2 R-PSSO-G2
针数 - 3 3
Reach Compliance Code - unknow unknow
ECCN代码 - EAR99 EAR99
其他特性 - FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS
应用 - EFFICIENCY EFFICIENCY
外壳连接 - CATHODE CATHODE
配置 - SINGLE SINGLE
二极管元件材料 - SILICON SILICON
二极管类型 - RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) - 0.55 V 0.35 V
JEDEC-95代码 - TO-263AB TO-263AB
JESD-30 代码 - R-PSSO-G2 R-PSSO-G2
JESD-609代码 - e3 e3
湿度敏感等级 - 1 1
最大非重复峰值正向电流 - 240 A 240 A
元件数量 - 1 1
相数 - 1 1
端子数量 - 2 2
最高工作温度 - 150 °C 150 °C
最低工作温度 - -65 °C -65 °C
最大输出电流 - 10 A 10 A
封装主体材料 - PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 - RECTANGULAR RECTANGULAR
封装形式 - SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) - NOT SPECIFIED NOT SPECIFIED
认证状态 - Not Qualified Not Qualified
最大重复峰值反向电压 - 25 V 25 V
表面贴装 - YES YES
技术 - SCHOTTKY SCHOTTKY
端子面层 - Tin (Sn) - with Nickel (Ni) barrie Tin (Sn) - with Nickel (Ni) barrie
端子形式 - GULL WING GULL WING
端子位置 - SINGLE SINGLE
处于峰值回流温度下的最长时间 - NOT SPECIFIED NOT SPECIFIED

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