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SBB-2089

产品描述50 MHz - 850 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
产品类别热门应用    无线/射频/通信   
文件大小733KB,共6页
制造商ETC1
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SBB-2089概述

50 MHz - 850 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER

50 MHz - 850 MHz 射频/微波宽带低功率放大器

SBB-2089规格参数

参数名称属性值
最大工作温度85 Cel
最小工作温度-40 Cel
最大输入功率12 dBm
最大工作频率850 MHz
最小工作频率50 MHz
加工封装描述绿色 PACKAGE-3
无铅Yes
欧盟RoHS规范Yes
状态TRANSFERRED
结构COMPONENT
端子涂层MATTE 锡
阻抗特性50 ohm
微波射频类型WIDE 波段 低 POWER

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Product Description
Sirenza Microdevices’ SBB-2089 is a high performance InGaP HBT MMIC
amplifier utilizing a Darlington configuration with an active bias network.
The active bias network provides stable current over temperature and
process Beta variations. Designed to run directly from a 5V supply, the
SBB-2089 does not require a dropping resistor as compared to typical
Darlington amplifiers. The SBB-2089 product is designed for high linearity
5V gain block applications that require small size and minimal external
components. It is internally matched to 50 ohms.
The matte tin finish on Sirenza’s lead-free package utilizes a post annealing
process to mitigate tin whisker formation and is RoHS compliant per EU
Directive 2002/95. This package is also manufactured with green molding
compounds that contain no antimony trioxide nor halogenated fire retardants.
SBB-2089
SBB-2089Z
Pb
RoHS Compliant
&
Green
Package
50 - 850 MHz, Cascadable
Active Bias InGaP/GaAs HBT MMIC Amplifier
Product Features
Available in Lead Free, RoHS compliant, & Green packaging
IP3 = 42.8 dBm @ 240MHz
P1dB = 20.8 dBm @ 500MHz
Single Fixed 5V Supply
Robust 1000V ESD, Class 1C
Patented Thermal Design & Patent Pending Bias Circuit
Low Thermal Resistance
Gain & Return Loss vs. Frequency (w/ App. Ckt.)
30
20
10
0
dB
-10
-20
-30
-40
-50
50
Symbol
S21
S11
MSL 1 moisture rating
Applications
S22
150
250
350
450
550
Frequency (MHz)
Parameters
650
750
850
Units
Receiver IF Amplifier
Cellular, PCS, GSM, UMTS
Wireless Data, Satellite Terminals
Frequency
Min.
Typ.
Max.
S
21
Small Signal Gain
dB
70 MHz
240 MHz
400 MHz
70 MHz
240 MHz
400 MHz
70 MHz
240 MHz
400 MHz
18.5
18.5
20
20
20
20
20
21
41
43
41
50 - 850
21.5
21.5
P
1dB
Output Power at 1dB Compression
dBm
18.5
IP
3
Bandwidth
IRL
ORL
S
12
NF
V
D
I
D
R
TH
, j-l
Test Conditions:
Third Order Intercept Point
S
11
, S
22
: Minimum 10dB Return Loss (typ.)
Input Return Loss
Output Return Loss
Reverse Isolation
Noise Figure
Device Operating Voltage
Device Operating Current
Thermal Resistance (junction - lead)
V
D
= 5V
T
L
= 25°C
I
D
= 90mA Typ.
Z
S
= Z
L
= 50 Ohms
dBm
MHz
dB
dB
dB
dB
V
mA
°C/W
39
70 -500MHz
70 -500MHz
70 -500MHz
500 MHz
15
11
20
14
22
2.7
5
3.7
5.3
98
82
90
48.8
OIP
3
Tone Spacing = 1MHz, Pout per tone = 0 dBm
Tested with Bias Tees
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-104005 Rev C

SBB-2089相似产品对比

SBB-2089 SBB-2089Z
描述 50 MHz - 850 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 50 MHz - 850 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
最大工作温度 85 Cel 85 Cel
最小工作温度 -40 Cel -40 Cel
最大输入功率 12 dBm 12 dBm
最大工作频率 850 MHz 850 MHz
最小工作频率 50 MHz 50 MHz
加工封装描述 绿色 PACKAGE-3 绿色 PACKAGE-3
无铅 Yes Yes
欧盟RoHS规范 Yes Yes
状态 TRANSFERRED TRANSFERRED
结构 COMPONENT COMPONENT
端子涂层 MATTE 锡 MATTE 锡
阻抗特性 50 ohm 50 ohm
微波射频类型 WIDE 波段 低 POWER WIDE 波段 低 POWER

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