ESD Leaded Schottky Barrier Rectifiers
Comchip
SMD Diode Specialist
SB520E-G Thru. SB5100E-G
Voltage: 20 to 100 V
Current: 5.0 A
RoHS Device
DO-201AD
Features
-Low
drop down voltage.
-5.0A
operation at T
A
=75°C with no thermal runaway
.
-For
use in low voltage, high frequency invertors free
wheeling and polarity protection.
-Silicon
epitaxial planar chips.
-ESD
test under IEC6100-4-2 :
Standard: >15KV(Air) & 8KV(Contact)
-Lead-free
part, meet RoHS requirements.
1.0(25.4) Min.
0.210(5.3)
0.189(4.8)
0.375(9.5)
0.287(7.3)
Mechanical data
-Epoxy:
UL94-V0 rated flame retardant
-Case:
Molded plastic body DO-201AD
-Terminals:
Solderable per MIL-STD-750 Method 2026
-Polarity:
Color band denotes cathode end
-Mounting
Position: Any
-Weight:
1.12grams
0.052(1.3)
0.048(1.2)
1.0(25.4) Min.
Dimensions in inches and (millimeter)
Electrical Characteristics
(at T =25°C unless otherwise noted)
A
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.5” (12.7mm) lead length at TA=75°C, See Figure 1
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
SB
520E-G
20
14
20
SB
540E-G
40
28
40
SB
545E-G
45
30
45
SB
550E-G
50
35
50
5.0
SB
560E-G
60
42
60
SB
580E-G
80
56
80
SB
5100E-G
100
70
100
Unit
V
V
V
A
Peak forward surge current
8.3ms single half sine-wave superimposed on rated load
(JEDEC method)
TL=110°C
I
FSM
V
F
I
R
150
125
A
V
mA
Maximum forward voltage at 5.0A (Note 1)
Maximum DC reverse current
At rated DC blocking voltage
T
A
=25°C
T
A
=100°C
0.55
0.5
50
0.70
0.85
30
500
35.0
15.0
pF
°C/W
-65 to +150
-65 to +150
°C
°C
Typical junction capacitance (Note 2)
Typical t
hermal resistance
(Note 3)
Operating junction temperature range
Storage temperature range
C
J
R
θJA
R
θJL
T
J
T
STG
-65 to +125
NOTES:
1. Pulse test :
300µS pulse width, 1% duty cycle.
2.
Measured at 1.0MHz and applied reverse voltage of 4.0 Volts
.
3. Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted 0.500” (12.7mm) lead length with 2.5x2.5” (63.5x63.5mm) copper
pad.
REV:A
QW-BB043
Page 1
Comchip Technology CO., LTD.
ESD Leaded Schottky Barrier Rectifiers
Comchip
SMD Diode Specialist
RATING AND CHARACTERISTIC CURVES (SB520E-G Thru. SB5100E-G)
Fig.1 Forward Current Derating Curve
6.0
Fig.2 Maximum Non-repetitive Peak
Forward Surge Current
200
Peak Forward Surge Current (A)
Average Forward Current (A)
5.0
T
L
=110°C
8.3mS single half sine-wave
(JEDEC Method)
150
100
4.0
3.0
SB520E-G ~ SB545E-G
SB520E-G ~ SB545E-G
2.0
SB550E-G ~ SB5100E-G
50
SB550E-G ~ SB5100E-G
0
1
10
Number of Cycles at 60Hz
100
1.0
single phase half wave 60Hz
0
0
resistive or inductive load
3.75”(9.5mm) lead length
25
50
75
100
125
O
150
175
Lead Temperature (
C)
Fig.3 Typical Instantaneous Forward
Characteristics
50
Fig.4A Typical Reverse Characteristics
100
SB520E-G ~ SB545E-G
Instantaneous Reverse Current (mA)
Instantaneous Forward Current (A)
10
10
T
J
=125°C
1.0
0.1
SB580E-G ~ SB5100E-G
1
T
J
=100°C
SB550E-G ~ SB560E-G
0.1
0.01
SB520E-G ~ SB545E-G
0.01
T
J
=25°C
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
120
140
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig.5 Typical Junction Capacitance per leg
10,000
Fig.4B Typeical Reverse Characteristic
10
5
SB550E-G ~ SB5100E-G
Instantaneous Reverse Current (uA)
10
4
T
J
=150°C
T
J
=125°C
Junction Capacitacne (pF)
10
3
1,000
10
2
T
J
=75°C
T
J
=25°C
f=1.0MHz
Vsig=50mVp-p
100
0.1
1.0
10
Reverse Voltage (V)
100
10
1
T
J
=25°C
1
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage ( %)
REV:A
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Page 2
Comchip Technology CO., LTD.
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