ESD Leaded Schottky Barrier Rectifiers
Comchip
SMD Diode Specialist
SB320E-G Thru. SB3100E-G
Voltage: 20 to 100 V
Current: 3.0 A
RoHS Device
Features
-Low
drop down voltage.
-3.0A
operation at T
A
=75°C with no thermal runaway
.
-For
use in low voltage, high frequency invertors free
wheeling and polarity protection.
-Silicon
epitaxial planar chips.
-ESD
test under IEC6100-4-2 :
Standard: >15KV(Air) & 8KV(Contact)
-Lead-free
part, meet RoHS requirements.
DO-201AD
1.0(25.4) Min.
0.210(5.3)
0.189(4.8)
0.375(9.5)
0.287(7.3)
Mechanical data
-Epoxy:
UL94-V0 rated flame retardant
-Case:
Molded plastic body DO-201AD
-Terminals:
Solderable per MIL-STD-750 Method 2026
-Polarity:
Color band denotes cathode end
-Mounting
Position: Any
-Weight:
1.12 grams
Dimensions in inches and (millimeter)
1.0(25.4) Min.
0.052(1.3)
0.048(1.2)
Electrical Characteristics
(at T =25°C unless otherwise noted)
A
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.5” (12.7mm) lead length at TA=75°C, See Figure 1
SB
SB
SB
SB
SB
SB
SB
Symbol
320E-G 340E-G 345E-G 350E-G 360E-G 380E-G 3100E-G
Unit
V
RRM
V
RMS
V
DC
I
(AV)
20
14
20
40
28
40
45
30
45
50
35
50
3.0
60
42
60
80
56
80
100
70
100
V
V
V
A
Peak forward surge current
8.3ms single half sine-wave superimposed on rated load
(JEDEC method)
T
L
=110°C
I
FSM
V
F
I
R
80
A
V
mA
Maximum forward voltage at 3.0A (Note 1)
Maximum DC reverse current
At rated DC blocking voltage
T
A
= 25°C
T
A
=100°C
0.50
0.5
30
0.70
0.85
20
250
40.0
20.0
pF
°C/W
-65 to +150
-65 to +150
°C
°C
Typical junction capacitance (Note 2)
Typical t
hermal resistance
(Note 3)
Operating junction temperature range
Storage temperature range
C
J
R
θJA
R
θJL
T
J
T
STG
-65 to +125
NOTES:
1. Pulse test :
300µS pulse width, 1% duty cycle.
2.
Measured at 1.0MHz and applied reverse voltage of 4.0 Volts
.
3. Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted 0.500” (12.7mm)
lead length with 2.5x2.5” (63.5x63.5mm) copper
pad.
REV:A
QW-BB042
Page 1
Comchip Technology CO., LTD.
ESD Leaded Schottky Barrier Rectifiers
Comchip
SMD Diode Specialist
RATING AND CHARACTERISTIC CURVES (SB320E-G Thru. SB3100E-G)
Fig.1- Forward Current Derating Curve
3.6
100
Fig.2- Maximum Non-repetitive Peak
Forward Surge Current
Peak Forward Surge Current, (A)
Average Forward Current, (A)
3.0
2.4
1.8
SB320E-G ~ SB345E-G
10
1.2
SB350E-G ~ SB3100E-G
single phase half wave 60Hz
resistive or inductive load
3.75”(9.5mm) lead length
0
25
50
75
100
125
O
0.6
T
L
=110°C
8.3mS single half sine-wave
(JEDEC Method)
1
1
10
100
0
150
175
Lead Temperature, ( C)
Number of Cycles at 60Hz
Fig.3- Typical Instantaneous Forward
Characteristics
100
Instantaneous Reverse Current, (mA)
Instantaneous Forward Current, (A)
100
Fig.4A- Typical Reverse Characteristics
SB320E-G - SB345E-G
SB320E-G - SB345E-G
10
TJ=125°C
10
SB350E-G - SB360E-G
1.0
TJ=75°C
1.0
0.1
TJ=25°C
0.01
0.001
SB380E-G - SB3100E-G
0.1 0
0.2
0.4
0.6
0.8
1.0
0
20
40
60
80
100
120
140
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig.5- Typical Junction Capacitance
1000
Fig. 4B- Typeical Reverse Characteristic
1000
Instantaneous Reverse Current, (uA)
TJ=150°C
Junction Capacitacne, (pF)
100
TJ=125°C
100
TJ=100°C
10
SB350E-G - SB3100E-G
1.0
TJ=25°C
f=1.0MHz
TJ=25°C
10
0.1
0.1
1.0
10
Reverse Voltage, (V)
100
0
20
40
60
80
100
REV:A
Percent of Rated Peak Reverse Voltage, ( %)
Page 2
QW-BB042
Comchip Technology CO., LTD.
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
