ESD Leaded Schottky Barrier Rectifiers
SB220E-G Thru. SB2100E-G
Voltage: 20 to 100 V
Current: 2.0 A
RoHS Device
Features
-
Low drop down voltage
.
-For
use in low voltage, high frequency invertors free
wheeling and polarity protection
.
1.0(25.4) Min.
DO-15
-
Silicon epitaxial planar chips
.
-
ESD test under IEC6100-4-2 :
Standard: >15KV(Air) & 8KV(Contact)
0.142(3.6)
0.102(2.6)
0.299(7.6)
0.228(5.8)
Mechanical data
-Epoxy:
UL94V-0 rated flame retardant
-Case:
Molded plastic body DO-15
-Terminals:
Solderable per MIL-STD-750 Method 2026
-Polarity:
Color band denotes cathode end
-Mounting
Position: Any
-Weight:
0.4grams
Dimensions in inches and (millimeter)
1.0(25.4) Min.
0.034(0.86)
0.028(0.70)
Maximum Ratings and Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375” (9.5mm) lead length at TA=75°C, See Figure 1
SB
SB
SB
SB
SB
SB
SB
Symbol
220E-G 240E-G 245E-G 250E-G 260E-G 280E-G 2100E-G
V
RRM
V
RMS
V
DC
I
(AV)
20
14
20
40
28
40
45
30
45
50
35
50
2.0
60
42
60
80
56
80
100
70
100
Unit
V
V
V
A
Peak forward surge current
8.3ms single half sine-wave superimposed on rated load
(JEDEC method)
TL=110°C
I
FSM
V
F
I
R
20
C
J
R
θJA
R
θJL
T
J
T
STG
-65 to +125
50
A
V
mA
10
pF
°C/W
-65 to +150
°C
°C
Maximum forward voltage at 2.0A (Note 1)
Maximum DC reverse current
At rated DC blocking voltage
T
A
=25°C
T
A
=100°C
0.50
0.5
0.70
0.85
Typical junction capacitance (Note 2)
Typical t
hermal resistance
(Note 3)
Operating junction temperature range
Storage temperature range
170
50.0
25.0
-65 to +150
NOTES:
1. Pulse test :
300µS pulse width, 1% duty cycle.
2.
Measured at 1.0MHz and applied reverse voltage of 4.0 Volts
.
3. Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted 0.375” (9.5mm) lead length
Company reserves the right to improve product design , functions and reliability without notice.
QW-BB058
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Page 1
Comchip Technology CO., LTD.
ESD Leaded Schottky Barrier Rectifiers
RATING AND CHARACTERISTIC CURVES (SB220E-G Thru. SB2100E-G)
Fig.1 Forward Current Derating Curve
2.4
Fig.2 Maximum Non-repetitive Peak
Forward Surge Current
100
Peak Forward Surge Current (A)
RESISTIVE OR INDUCTIVE LOAD
Average Forward Current (A)
2.0
1.6
1.2
SB220E-G ~ SB260E-G
SB280E-G ~ SB2100E-G
single phase half wave 60Hz
resistive or inductive load
3.75”(9.5mm) lead length
0
25
50
75
100
125
150
175
10
0.8
0.4
T
L
=110°C
8.3mS single half sine-wave
(JEDEC Method)
1
1
10
Number of Cycles at 60Hz
100
0
Lead Temperature (°C)
Fig.3 Typical Instantaneous Forward
Characteristics
10
SB280E-G ~ SB2100E-G
Instantaneous Reverse Current (mA)
Instantaneous Forward Current (A)
10
100
Fig.4A Typical Reverse Characteristics
SB220E-G ~ SB260E-G
T
J
=125°C
T
J
=100°C
SB250E-G ~ SB260E-G
1.0
T
J
=75°C
0.1
1.0
SB220E-G ~ SB245E-G
0.01
0.001
T
J
=25°C
0.1
0
0.2
0.4
0.6
0.8
0
20
40
60
80
100
120
140
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig.5 Typical Junction Capacitance
1000
Fig.4B Typeical Reverse Characteristic
10000
SB280E-G ~ SB2100E-G
1000
Instantaneous Reverse Current (uA)
Junction Capacitacne (pF)
T
J
=150°C
T
J
=125°C
100
10
T
J
=100°C
100
1.0
T
J
=25°C
0.1
0
20
40
60
80
100
T
J
=25°C
f=1.0MHz
10
0.1
1.0
10
Reverse Voltage (V)
100
Percent of Rated Peak Reverse Voltage ( %)
REV:A
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Comchip Technology CO., LTD.
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