RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, H-33288-6, 6 PIN
| 参数名称 | 属性值 |
| 是否无铅 | 不含铅 |
| 是否Rohs认证 | 符合 |
| 包装说明 | FLANGE MOUNT, R-CQFM-X6 |
| 针数 | 6 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| 其他特性 | HIGH RELIABILITY |
| 外壳连接 | SOURCE |
| 配置 | SINGLE |
| 最小漏源击穿电压 | 65 V |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| 最高频带 | S BAND |
| JESD-30 代码 | R-CQFM-X6 |
| JESD-609代码 | e4 |
| 元件数量 | 1 |
| 端子数量 | 6 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 200 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子面层 | GOLD (10) |
| 端子形式 | UNSPECIFIED |
| 端子位置 | QUAD |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON |
| PTFB212503ELV1 | PTFB212503FLV2R250 | PTFB212503FL-240W | PTFB212503FLV2 | PTFB212503ELV1R250 | PTFB212503EL-240W | |
|---|---|---|---|---|---|---|
| 描述 | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, H-33288-6, 6 PIN | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, H-34288-4/2, 4 PIN | RF Power Field-Effect Transistor | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, H-34288-4/2, 4 PIN | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, H-33288-6, 6 PIN | RF Power Field-Effect Transistor |
| 包装说明 | FLANGE MOUNT, R-CQFM-X6 | GREEN, H-34288-4/2, 4 PIN | , | FLATPACK, R-CQFP-X4 | FLANGE MOUNT, R-CQFM-X6 | , |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant |
| 是否无铅 | 不含铅 | 不含铅 | - | 不含铅 | 不含铅 | - |
| 是否Rohs认证 | 符合 | 符合 | - | 符合 | 符合 | - |
| 针数 | 6 | 4 | - | 4 | 6 | - |
| ECCN代码 | EAR99 | EAR99 | - | EAR99 | EAR99 | EAR99 |
| 其他特性 | HIGH RELIABILITY | HIGH RELIABILITY | - | HIGH RELIABILITY | HIGH RELIABILITY | - |
| 外壳连接 | SOURCE | SOURCE | - | SOURCE | SOURCE | - |
| 配置 | SINGLE | SINGLE | - | SINGLE | SINGLE | - |
| 最小漏源击穿电压 | 65 V | 65 V | - | 65 V | 65 V | - |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - |
| 最高频带 | S BAND | S BAND | - | S BAND | S BAND | - |
| JESD-30 代码 | R-CQFM-X6 | R-CQFP-X4 | - | R-CQFP-X4 | R-CQFM-X6 | - |
| JESD-609代码 | e4 | e4 | - | e4 | e4 | - |
| 元件数量 | 1 | 1 | - | 1 | 1 | - |
| 端子数量 | 6 | 4 | - | 4 | 6 | - |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE | - |
| 最高工作温度 | 200 °C | 200 °C | - | 200 °C | 200 °C | - |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | - | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | - |
| 封装形状 | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | - |
| 封装形式 | FLANGE MOUNT | FLATPACK | - | FLATPACK | FLANGE MOUNT | - |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | - |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | - | N-CHANNEL | N-CHANNEL | - |
| 表面贴装 | YES | YES | - | YES | YES | - |
| 端子面层 | GOLD (10) | GOLD (10) | - | GOLD (10) | GOLD (10) | - |
| 端子形式 | UNSPECIFIED | UNSPECIFIED | - | UNSPECIFIED | UNSPECIFIED | - |
| 端子位置 | QUAD | QUAD | - | QUAD | QUAD | - |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | - |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | - | AMPLIFIER | AMPLIFIER | - |
| 晶体管元件材料 | SILICON | SILICON | - | SILICON | SILICON | - |
| 厂商名称 | - | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | - |
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