RUS1H20R
Power Schottky Barrier Diode
MOSFET
Features
•
V
RRM
=
Pin Description
100V
I
F(AV)
=2x 10A
•
Low Power Loss and High Efficiency
• High Surge Capability
• Low Leakage Current
•
Low Forward Voltage Drop
• Lead Free and Green Devices Available
TO-220
Applications
• Rectifiers in SMPS
• Free Wheeling Diode
• DC-DC Converters
Schottky Barrier Diode
Absolute Maximum Ratings
Symbol
Parameter
Rating
100
100
20
10
150
-55 to 150
150
V
A
A
A
°C
°C
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
RRM
V
R
I
F(AV)
I
FSM
T
STG
T
J
Maximum Repetitive Reverse Voltage
Maximum DC Reverse Voltage
Average Rectified Forward Current, per Device
T
C
=130°C
per Diode
Peak Forward Surge Current,8.3mS Half Sine Wave
Storage Temperature Range
Operating Junction Temperature
Mounted on Large Heat Sink
R
θJC
Thermal Resistance-Junction to Case per Diode
1.5
°C/W
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– JUL., 2012
www.ruichips.com
RUS1H20R
Electrical Characteristics
Symbol
Static Characteristics
I
R
①
(T
C
=25°C Unless Otherwise Noted)
RUS1H20R
Min.
Typ.
Max.
Parameter
Test Condition
Unit
Reverse Leakage Current
V
R
=100V, T
C
=25°C
V
R
=100V, T
C
=125°C
I
F
=5A, T
C
=25°C
0.65
0.60
0.75
0.66
I
F
=5A, T
C
=125°C
I
F
=10A, T
C
=25°C
I
F
=10A, T
C
=125°C
100
5
-
-
0.8
0.7
µA
mA
V
V
V
V
V
F
①
Zero Gate Voltage Drain Current
Notes:
Pulse test ; Pulse width≤300µs, duty cycle≤2%.
Ordering and Marking Information
Device
RUS1H20R
Marking
RUS1H20R
Package
TO-220
Packaging
Tube
Quantity
50
Reel Size
-
Tape width
-
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– JUL., 2012
2
www.ruichips.com
RUS1H20R
Typical Characteristics
Power Derating
Junction Capacitance
I
FAV
– Average Forward Current (A)
T
C
- Case Temperature (°C)
C
J
- Junction Capacitance (pF)
V
R
– Reverse Voltage (V)
Forward Voltage
Reverse Current
V
F
- Forward Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– JUL., 2012
3
I
R
– Reverse Current (µA)
I
F
- Forward Current (A)
V
R
- Reverse Voltage
www.ruichips.com
RUS1H20R
Package Information
TO220(AB) Package Outline
SYMBOL
A
A1
A2
b
b2
c
D
D1
E
e
e1
MM
MIN
4.40
1.22
2.59
0.77
1.23
0.34
14.70
8.60
10.06
NOM
4.57
1.27
2.69
0.81
1.27
0.38
15.00
8.70
10.16
2.54BSC
5.08BSC
MAX
4.70
1.32
2.79
0.90
1.36
0.47
15.30
8.80
10.26
MIN
0.173
0.048
0.102
0.030
0.048
0.013
0.579
0.339
0.396
INCH
NOM
0.180
0.050
0.106
0.032
0.050
0.015
0.591
0.343
0.400
0.1BSC
0.2BSC
MAX
0.185
0.052
0.110
0.035
0.054
0.019
0.602
0.346
0.404
SYMBOL
H1
L
L1
L2
Øp
Q
MM
MIN
6.10
13.20
-
3.76
2.60
5°
1°
0.05
1.40
NOM
6.30
13.40
-
2.50REF
3.84
2.74
7°
3°
0.10
1.50
3.88
2.90
9°
5°
0.20
1.60
0.148
0.102
5°
1°
0.002
0.055
MAX
6.50
13.50
4.35
MIN
0.240
0.520
-
INCH
NOM
0.248
0.528
-
0.098REF
0.151
0.108
7°
3°
0.004
0.059
0.153
0.114
9°
5°
0.008
0.063
MAX
0.256
0.531
0.171
θ
1
θ
2
DEP
Øp1
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– JUL., 2012
4
www.ruichips.com
RUS1H20R
Customer Service
Worldwide Sales and Service:
Sales@ruichips.com
Technical Support:
Technical@ruichips.com
Investor Relations Contacts:
Investor@ruichips.com
Marcom Contact:
Marcom@ruichips.com
Editorial Contact:
Editorial@ruichips.com
HR Contact:
HR@ruichips.com
Legal Contact:
Legal@ruichips.com
Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building,
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA
TEL:
(86-755) 8311-5334
FAX:
(86-755) 8311-4278
E-mail:
Sales-SZ@ruichips.com
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– JUL., 2012
5
www.ruichips.com
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