RU20T7G
N-Channel Advanced Power MOSFET
MOSFET
Features
• 20V/7A,
R
DS (ON)
=12
mΩ
(Typ.) @ V
GS
=4.5V
R
DS (ON)
=18
mΩ
(Typ.) @ V
GS
=2.5V
• Super High Dense Cell Design
•
Reliable and Rugged
Pin Description
TSSOP-8
•
ESD Protected
• Lead Free and Green Available
Applications
•
PWM Applications
Dual N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
20
±8
150
-55 to 150
T
A
=25°C
2
①
Unit
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
I
DP
I
D
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
V
°C
°C
A
Mounted on Large Heat Sink
300μs Pulse Drain Current Tested
Continuous Drain Current(VGS=4.5V)
T
A
=25°C
T
A
=25°C
T
A
=70°C
P
D
R
θJA
②
28
A
A
7
5.5
1.5
0.96
83.5
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
T
A
=25°C
T
A
=70°C
W
°C/W
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– SEP., 2012
www.ruichips.com
RU20T7G
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
③
(T
A
=25°C Unless Otherwise Noted)
RU20T7G
Min.
Typ.
Max.
Parameter
Test Condition
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
V
GS
=0V, I
DS
=250µA
V
DS
=20V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±8V, V
DS
=0V
V
GS
=4.5V, I
DS
=7A
V
GS
=2.5V, I
DS
=5.5A
20
1
30
0.5
0.7
1.0
±10
12
18
16
25
V
µA
V
uA
mΩ
mΩ
Diode Characteristics
V
SD
t
rr
Q
rr
③
Diode Forward Voltage
Reverse Recovery Time
I
SD
=1A, V
GS
=0V
18
I
SD
=1A, dl
SD
/dt=100A/µs
8
1
V
ns
nC
Reverse Recovery Charge
④
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
④
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=10V,
Frequency=1.0MHz
1.5
1155
180
140
6
12
50
14
Ω
pF
V
DD
=10V, R
L
=1.4Ω,
I
DS
=7A, V
GEN
=4.5V,
R
G
=3Ω
ns
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Notes:
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Pulse width limited by safe operating area.
②When
mounted on 1 inch square copper board, t
≤10sec.
③Pulse
test ; Pulse width≤300µs, duty cycle≤2%.
④Guaranteed
by design, not subject to production testing.
13
V
DS
=16V, V
GS
=4.5V,
I
DS
=7A
1
3.5
nC
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– SEP., 2012
2
www.ruichips.com
RU20T7G
Typical Characteristics
Power Dissipation
Drain Current
T
j
- Junction Temperature (°C)
I
D
- Drain Current (A)
T
j
- Junction Temperature (°C)
Safe Operation Area
P
tot
- Power (W)
Thermal Transient Impedance
V
DS
- Drain-Source Voltage (V)
Normalized Effective Transient
Square Wave Pulse Duration (sec)
3
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– SEP., 2012
I
D
- Drain Current (A)
www.ruichips.com
RU20T7G
Typical Characteristics
Output Characteristics
Drain-Source On Resistance
V
DS
- Drain-Source Voltage (V)
R
DS(ON)
- On Resistance (mΩ)
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
V
GS
- Gate-Source Voltage (V)
Normalized Threshold Voltage
T
j
- Junction Temperature (°C)
4
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– SEP., 2012
R
DS(ON)
- On - Resistance (m)
www.ruichips.com
RU20T7G
Typical Characteristics
Drain-Source On Resistance
Source-Drain Diode Forward
Normalized On Resistance
T
j
- Junction Temperature (°C)
I
S
- Source Current (A)
V
SD
- Source-Drain Voltage (V)
Capacitance
Gate Charge
V
DS
- Drain-Source Voltage (V)
V
GS
- Gate-Source Voltage (V)
C - Capacitance (pF)
Q
G
- Gate Charge (nC)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– SEP., 2012
5
www.ruichips.com
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