RU206G
N-Channel Advanced Power MOSFET
MOSFET
Features
• 20V/6A,
R
DS (ON)
=18
mΩ
(Typ.) @ V
GS
=4.5V
R
DS (ON)
=24
mΩ
(Typ.) @ V
GS
=2.5V
• Super High Dense Cell Design
•
Reliable and Rugged
Pin Description
TSSOP-8
• Lead Free and Green Available
Applications
•
Power Management
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
I
DP
I
D
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Dual N-Channel MOSFET
Rating
20
±12
150
-55 to 150
T
A
=25°C
1.7
①
Unit
V
°C
°C
A
Mounted on Large Heat Sink
300μs Pulse Drain Current Tested
Continuous Drain Current(VGS=4.5V)
T
A
=25°C
T
A
=25°C
T
A
=70°C
P
D
R
θJA
②
24
A
A
6
4.5
1.5
0.96
83.5
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
T
A
=25°C
T
A
=70°C
W
°C/W
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– APR., 2012
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RU206G
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
③
(T
A
=25°C Unless Otherwise Noted)
RU206G
Min.
Typ.
Max.
Parameter
Test Condition
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
V
GS
=0V, I
DS
=250µA
V
DS
=20V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±10V, V
DS
=0V
V
GS
=4.5V, I
DS
=6A
V
GS
=2.5V, I
DS
=5A
20
1
30
0.5
0.8
1.5
±100
18
24
21
32
V
µA
V
nA
mΩ
mΩ
Diode Characteristics
V
SD
③
Diode Forward Voltage
④
I
SD
=1A, V
GS
=0V
1
V
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
④
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=10V,
Frequency=1.0MHz
1.8
580
120
95
5
13
35
12
Ω
pF
V
DD
=10V, R
L
=1.7Ω,
I
DS
=6A, V
GEN
=4.5V,
R
G
=6Ω
ns
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Notes:
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Pulse width limited by safe operating area.
②When
mounted on 1 inch square copper board, t
≤10sec.
③Pulse
test ; Pulse width≤300µs, duty cycle≤2%.
④Guaranteed
by design, not subject to production testing.
10
V
DS
=16V, V
GS
=4.5V,
I
DS
=6A
1.5
3.4
14
nC
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– APR., 2012
2
www.ruichips.com
RU206G
Typical Characteristics
Power Dissipation
Drain Current
T
j
- Junction Temperature (°C)
I
D
- Drain Current (A)
T
j
- Junction Temperature (°C)
Safe Operation Area
P
tot
- Power (W)
Thermal Transient Impedance
V
DS
- Drain-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– APR., 2012
3
Normalized Effective Transient
Square Wave Pulse Duration (sec)
www.ruichips.com
I
D
- Drain Current (A)
RU206G
Typical Characteristics
Output Characteristics
Drain-Source On Resistance
V
DS
- Drain-Source Voltage (V)
R
DS(ON)
- On Resistance (mΩ)
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
V
GS
- Gate-Source Voltage (V)
Normalized Threshold Voltage
T
j
- Junction Temperature (°C)
4
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– APR., 2012
R
DS(ON)
- On - Resistance (m)
www.ruichips.com
RU206G
Typical Characteristics
Drain-Source On Resistance
Source-Drain Diode Forward
Normalized On Resistance
T
j
- Junction Temperature (°C)
I
S
- Source Current (A)
V
SD
- Source-Drain Voltage (V)
Capacitance
Gate Charge
V
DS
- Drain-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– APR., 2012
5
V
GS
- Gate-Source Voltage (V)
C - Capacitance (pF)
Q
G
- Gate Charge (nC)
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Microchip MCU
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