RU1HP25S
P-Channel Advanced Power MOSFET
MOSFET
Features
• -100V/-25A,
R
DS (ON)
=40mΩ(tpy.)@V
GS
=-10V
•
Super High Dense Cell Design
•
Ultra Low On-Resistance
•
Reliable and Rugged
•
100% avalanche tested
• Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
TO-263
Applications
•
Inverters
P-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
-100
±20
175
-55 to 175
T
C
=25°C
-25
①
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
I
DP
I
D
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
V
°C
°C
A
Mounted on Large Heat Sink
300μs Pulse Drain Current Tested
Continuous Drain Current(V
GS
=-10V)
T
C
=25°C
T
C
=25°C
T
C
=100°C
P
D
R
θJC
③
-100
-25
A
A
②
-19
79
39.5
1.9
W
°C/W
Maximum Power Dissipation
Thermal Resistance-Junction to Case
T
C
=25°C
T
C
=100°C
Drain-Source Avalanche Ratings
E
AS
Avalanche Energy, Single Pulsed
132
mJ
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– JUN., 2012
www.ruichips.com
RU1HP25S
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
④
(T
C
=25°C Unless Otherwise Noted)
RU1HP25S
Min.
Typ.
Max.
Parameter
Test Condition
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
V
GS
=0V, I
DS
=-250µA
V
DS
= -100V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=-250µA
V
GS
=±20V, V
DS
=0V
V
GS
= -10V, I
DS
=-25A
-100
-1
-30
-2
-3
-4
±100
40
60
V
µA
V
nA
mΩ
Diode Characteristics
V
SD
t
rr
Q
rr
④
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
⑤
I
SD
=-25A, V
GS
=0V
I
SD
=-25A, dl
SD
/dt=100A/µs
80
150
-1.2
V
ns
nC
Ω
pF
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
⑤
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
= -50V,
Frequency=1.0MHz
2
1500
170
85
13
36
101
68
V
DD
=-50V, R
L
=2Ω,
I
DS
=-25A, V
GEN
=-10V,
R
G
=6Ω
ns
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Notes:
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=-80V, V
GS
= -10V,
I
DS
=-25A
30
8
11
nC
Pulse width limited by safe operating area.
Calculated continuous current based on maximum allowable junction temperature.
③Limited
by T
Jmax
, I
AS
=23A, V
DD
=-60V, R
G
= 50Ω , Starting T
J
= 25°C.
④Pulse
test ; Pulse width≤300µs, duty cycle≤2%.
⑤Guaranteed
by design, not subject to production testing.
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– JUN., 2012
2
www.ruichips.com
RU1HP25S
Typical Characteristics
Power Dissipation
Drain Current
T
j
- Junction Temperature (°C)
-I
D
- Drain Current (A)
T
j
- Junction Temperature (°C)
Safe Operation Area
P
tot
- Power (W)
Thermal Transient Impedance
-V
DS
- Drain-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– JUN., 2012
3
Normalized Effective Transient
Square Wave Pulse Duration (sec)
www.ruichips.com
-I
D
- Drain Current (A)
RU1HP25S
Typical Characteristics
Output Characteristics
Drain-Source On Resistance
-V
DS
- Drain-Source Voltage (V)
R
DS(ON)
- On Resistance (mΩ)
-I
D
- Drain Current (A)
-I
D
- Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
-V
GS
- Gate-Source Voltage (V)
Normalized Threshold Voltage
T
j
- Junction Temperature (°C)
4
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– JUN., 2012
R
DS(ON)
- On - Resistance (m)
www.ruichips.com
RU1HP25S
Typical Characteristics
Drain-Source On Resistance
Source-Drain Diode Forward
Normalized On Resistance
T
j
- Junction Temperature (°C)
-I
S
- Source Current (A)
-V
SD
- Source-Drain Voltage (V)
Capacitance
Gate Charge
-V
DS
- Drain-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– JUN., 2012
5
-V
GS
- Gate-Source Voltage (V)
C - Capacitance (pF)
Q
G
- Gate Charge (nC)
www.ruichips.com
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