CHONGQING PINGYANG ELECTRONICS CO.,LTD.
KBU8A/RS801 THRU KBU8M/RS807
SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE：50-1000V
CURRENT：8.0A
FEATURES
·Low
leakage
·Low
forward voltage
·Surge
overload ratings-250 Amperes
·Molded
structure
KBU
.935(23.7)
.895(22.7)
.700(17.8)
.600(16.8)
.300
(7.5)
.780(19.8)
.740(18.8)
- AC
+
.052(1.3) DIA.
.048(1.2) TYP.
1.00
(25.4)
MIN.
MECHANICAL DATA
·Case:
Molded plastic
·Epoxy:
UL 94V-0 rate flame retardant
·Lead:
MIL-STD- 202E, Method 208 guaranteed
·Polarity:
Symbols molded or marked on body
·Mounting
position:
Any
·Weight:
8.0 grams
.140
(5.3)
.220(5.6)
SPACING
.180(4.6) .280(7.0)
.268(6.8)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward rectified Output
Current at T
C
=75°C
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC
method)
Maximum Forward Voltage Drop per element at
4.0A DC
Maximum DC Reverse Current
@ T
A
=25°C
at Rated DC Blocking Voltage
@ T
A
=100°C
per element
V
RRM
V
RMS
V
DC
I
o
I
FSM
V
F
I
R
2
RS801 RS802 RS803 RS804 RS805 RS806 RS807
KBU8A KBU8B KBU8D KBU8G KBU8J KBU8K KBU8M
50
35
50
100
70
100
200
140
200
400
280
400
8.0
250
1.0
10
500
600
420
600
800
560
800
1000
700
1000
units
V
V
V
A
A
V
µA
It
127
A
2
S
ec
I
2
t Rating for Fusing (t<8.3ms)
C
J
186
pF
Typical Junction Capacitance (Note 1)
R
θJA
10
Typical Thermal Resistance (Note 2)
°C/W
Notes: 1.Measured at 1MHz and applied reverse voltage of 4.0 volts
2.Thermal Resistance from Junction to Ambientwith units mounted on 0.47×0.47”(12×12mm) copper pads
１
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