Preliminary Datasheet
RJK60S1DPD
600V - 8A - SJ MOS FET
High Speed Power Switching
Features
Superjunction MOSFET
Low on-resistance
R
DS(on)
= 0.84
typ. (at I
D
= 2.2A, V
GS
= 10 V, Ta = 25C)
High speed switching
t
f
= 61 ns typ. (at I
D
= 2.2 A, V
GS
= 10 V, R
L
= 136
,
Rg = 10
,
Ta = 25C)
R07DS0853EJ0004
Rev.0.04
Nov 30, 2012
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name : MP-3A)
4
1.
2.
3.
4.
S
D
G
12
3
Gate
Drain
Source
Drain
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Tc = 25C
Tc = 100C
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to cse thermal impedance
Channel temperature
Storage temperature
Notes: 1.
2.
3.
4.
Limited by Tch max.
Maximum duty cycle D = 0.5
STch = 25C, Tch
150C
Value at Tc = 25C
Symbol
V
DSS
V
GSS
Note1,2
I
D
Note1,2
I
D
I
D (pulse)
Note1
I
DR
Note1
I
DR (pulse)
Note3
I
AP
Note3
E
AR
Pch
Note4
ch-c
Tch
Tstg
Note1
Ratings
600
+30,
20
8
5
16
8
16
1.1
0.066
31.2
4.0
150
–55 to +150
Unit
V
V
A
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0853EJ0004 Rev.0.04
Nov 30, 2012
Page 1 of 6
RJK60S1DPD
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Gate resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Body-drain diode reverse recovery
current
Body-drain diode reverse recovery
charge
Notes: 5. Pulse test
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
R
DS(on)
Rg
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
I
rr
Q
rr
Min
600
—
—
3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
0.84
2.10
3.4
380
500
2.1
9
15
22
61
9.3
2.1
4.5
1.0
210
14.5
1.7
Max
—
1
±0.1
5
1.05
—
—
—
—
—
—
—
—
—
—
—
—
1.6
—
—
—
Unit
V
mA
A
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
A
C
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 600 V, V
GS
= 0
V
GS
= +30V,
20
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 2.2 A, V
GS
= 10 V
Note5
Ta = 150C
Note5
I
D
= 2.2 A, V
GS
= 10 V
f = 1 MHz
V
DS
= 25 V, V
GS
= 0
V
DS
= 25 V
V
GS
= 0
f = 100 kHz
I
D
= 2.2 A
V
GS
= 10 V
R
L
= 136
Note5
Rg = 10
V
DD
= 480 V
V
GS
= 10 V
Note5
I
D
= 1 A
I
F
= 4.4 A, V
GS
= 0
Note5
I
F
= 4.4 A
V
GS
= 0
Note5
di
F
/dt = 100 A/s
R07DS0853EJ0004 Rev.0.04
Nov 30, 2012
Page 2 of 6
RJK60S1DPD
Preliminary
Main Characteristics
Channel Dissipation vs.
Case Temperature
40
8
Ta = 25°C
Pulse Test
Typical Output Characteristics
8V
10 V
15 V
7V
Channel Dissipation Pch (W)
I
D
(A)
30
6
20
Drain Current
6.5 V
4
6V
2
10
V
GS
= 5.5 V
0
0
0
25
50
75
100 125 150 175
0
2
4
6
8
10
Case Temperature Tc (°C)
Drain to Source Voltage
V
DS
(V)
Typical Output Characteristics
8
Ta = 125°C
Pulse Test
100
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
I
D
(A)
Drain Current I
D
(A)
6
10
8V
10 V
4
7 V 6.5 V
Drain Current
15 V
6V
1
Tc = 75°C
25°C
2
V
GS
= 5.5 V
0.1
−25°C
0
0.01
0
2
4
6
8
10
0
2
4
6
8
10
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
R
DS(on)
(Ω)
10
V
GS
= 10 V
Pulse Test
Static Drain to Source on State Resistance
vs. Temperature (Typical)
3.0
2.5
2.0
1.5
1.0
2.2 A
0.5
0
−25
1.1 A
V
GS
= 10 V
Pulse Test
Ta = 125°C
1
25°C
I
D
= 4.4 A
0.1
0.1
1
10
0
25
50
75
100 125 150
Drain Current
I
D
(A)
Case Temperature
Tc (°C)
R07DS0853EJ0004 Rev.0.04
Nov 30, 2012
Page 3 of 6
RJK60S1DPD
Body-Drain Diode Reverse
Recovery Time (Typical)
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
10000
V
GS
= 0
f = 100 kHz
Ta = 25°C
Ciss
Reverse Recovery Time trr (ns)
1000
Capacitance C (pF)
1000
100
Coss
10
Crss
100
di/dt = 100 A/μs
V
GS
= 0, Ta = 25°C
10
1
10
100
1
0.1
0
50
100
150
200
250
300
Reverse Drain Current I
DR
(A)
Drain to Source Voltage
V
DS
(V)
Dynamic Input Characteristics (Typical)
V
DS
(V)
V
GS
(V)
800
I
D
= 1 A
Ta = 25°C
600
V
DS
400
V
DD
= 480 V
300 V
100 V
V
GS
12
16
100
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
I
DR
(A)
Reverse Drain Current
10
Ta = 125°C
25°C
1
V
GS
= 0
Pulse Test
0.1
0
0.4
0.8
1.2
1.6
Drain to Source Voltage
8
200
V
DD
= 480 V
300 V
100 V
4
8
12
16
4
0
0
0
Gate Charge
Qg (nC)
Gate to Source Voltage
Source to Drain Voltage
V
SD
(V)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
Drain to Source Breakdown Voltage
V
(BR)DSS
(V)
6
800
Drain to Source Breakdown Voltage
vs. Case Temperature (Typical)
Gate to Source Cutoff Voltage
V
GS(off)
(V)
5
I
D
= 1 mA
4
3
0.1 mA
2
1
V
DS
= 10 V
0
−25
0
25
700
600
500
I
D
= 10 mA
V
GS
= 0
400
−25
0
25
50
75
100 125 150
50
75
100 125 150
Case Temperature
Tc (°C)
Case Temperature
Tc (°C)
R07DS0853EJ0004 Rev.0.04
Nov 30, 2012
Page 4 of 6
RJK60S1DPD
Preliminary
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 300 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(on)
tr
90%
td(off)
tf
Avalanche Test Circuit
Avalanche Waveform
1
2
L
•
I
AP2
•
V
DSS
V
DSS
– V
DD
V
(BR)DSS
I
AP
V
DD
V
DS
V
DS
Monitor
L
I
AP
Monitor
E
AR
=
Rg
100
Ω
Vin
D. U. T
I
D
0
V
DD
R07DS0853EJ0004 Rev.0.04
Nov 30, 2012
Page 5 of 6
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