Preliminary
Datasheet
RJK2076DPA
200V - 20A - MOS FET
High Speed Power Switching
Features
Low on-resistance
R
DS(on)
= 0.068
typ. (at I
D
= 10 A, V
GS
= 10 V, Ta = 25C)
Very low gate charge
Qg = 19 nC typ. (at V
DD
= 160 V, V
GS
= 10 V, I
D
= 20 A, Ta = 25C)
Low leakage current
High speed switching
R07DS0859EJ0200
Rev.2.00
Jan 08, 2013
Outline
RENESAS Package code: PWSN0008DE-A
(Package name: WPAK(3F))
5 6 7 8
D D D D
5 6 7 8
4
G
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1.
2.
3.
4.
PW
10
s,
duty cycle
1%
STch = 25C, Tch
150C
Value at Tc = 25C
Limited by maximum safe operation area
Symbol
V
DSS
V
GSS
Note4
I
D
I
D (pulse)
I
DR
I
DR (pulse)Note1
I
APNote2
E
ARNote2
Pch
Note3
ch-c
Tch
Tstg
Note1
Ratings
200
±30
20
40
20
40
9
5.4
65
1.93
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0859EJ0200 Rev.2.00
Jan 08, 2013
Page 1 of 6
RJK2076DPA
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Notes: 5. Pulse test
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
Min
200
—
—
2.5
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
0.068
1200
200
30
17
18
25
12
19
6
6
0.82
123
Max
—
1
±1
4.5
0.085
—
—
—
—
—
—
—
—
—
—
1.35
—
Unit
V
A
A
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 200 V, V
GS
= 0
V
GS
=
30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 10 A, V
GS
= 10 V
Note5
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 10 A
V
GS
= 10 V
R
L
= 10
Rg = 10
V
DD
= 160 V
V
GS
= 10 V
I
D
= 20 A
I
F
= 20 A, V
GS
= 0
Note5
I
F
= 20 A, V
GS
= 0
di
F
/dt = 100 A/s
R07DS0859EJ0200 Rev.2.00
Jan 08, 2013
Page 2 of 6
RJK2076DPA
Preliminary
Main Characteristics
Maximum Safe Operation Area
1000
100
PW
Typical Output Characteristics
40
Ta = 25°C
Pulse Test
6.5 V
6.2 V
Drain Current I
D
(A)
μ
s
Drain Current I
D
(A)
10
30
7V
10 V
5.8 V
10
=1
00
20
1
Operation in this area
is limited by R
DS(on)
Tc = 25°C
1 shot
1
10
μ
s
5.4 V
10
0.1
V
GS
= 5 V
100
1000
0
0
2
4
6
8
10
0.01
0.1
Drain to Source Voltage V
DS
(V)
Drain to Source Voltage V
DS
(V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
R
DS(on)
(Ω)
1
V
GS
= 10 V
Ta = 25°C
Pulse Test
Typical Transfer Characteristics
100
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
10
Tc = 75°C
1
25°C
0.1
−25°C
0.1
0.01
0
2
4
6
8
0.01
1
10
100
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
0.30
0.25
0.20
I
D
= 40 A
0.15
0.10
10 A
0.05
0
−25
V
GS
= 10 V
Pulse Test
1000
Drain Current I
D
(A)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Body-Drain Diode Reverse
Recovery Time (Typical)
Reverse Recovery Time trr (ns)
20 A
100
di/dt = 100 A/μs
V
GS
= 0, Ta = 25°C
10
1
10
100
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Reverse Drain Current I
DR
(A)
R07DS0859EJ0200 Rev.2.00
Jan 08, 2013
Page 3 of 6
RJK2076DPA
Typical Capacitance vs.
Drain to Source Voltage (Typical)
Drain to Source Voltage V
DS
(V)
10000
Ta = 25°C
V
GS
= 0
f = 1 MHz
Ciss
1000
Preliminary
Dynamic Input Characteristics (Typical)
I
D
= 20 A
Ta = 25
°C
V
GS
300
V
DD
= 160 V
100 V
50 V
12
200
V
DS
8
Coss
100
100
Crss
10
0
20
40
60
80
100
V
DD
= 160 V
100 V
50 V
0
10
20
30
4
0
0
40
Drain to Source Voltage V
DS
(V)
Gate Charge Qg (nC)
40
Gate to Source Cutoff Voltage V
GS(off)
(V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
Reverse Drain Current I
DR
(A)
V
GS
= 0
Ta = 25°C
Pulse Test
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
6
5
I
D
= 10 mA
4
3
1 mA
2
1
0
−25
0.1 mA
V
DS
= 10 V
30
20
10
0
0
0.4
0.8
1.2
1.6
0
25
50
75
100 125 150
Source to Drain Voltage V
SD
(V)
Case Temperature
Tc (°C)
R07DS0859EJ0200 Rev.2.00
Jan 08, 2013
Page 4 of 6
Gate to Source Voltage V
GS
(V)
400
16
Capacitance C (pF)
RJK2076DPA
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
Preliminary
1
D=1
0.5
0.3
0.2
0.1
θ
ch – c(t) =
γ
s (t) •
θ
ch – c
θ
ch – c = 1.93°C/W, Tc = 25°C
P
DM
PW
T
1m
10 m
100 m
1
10
D=
PW
T
0.1
0.05
0.0
2
0.03
0.01
10
μ
e
1
0.0
puls
ot
sh
1
100
μ
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 100 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(on)
tr
90%
td(off)
tf
R07DS0859EJ0200 Rev.2.00
Jan 08, 2013
Page 5 of 6
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