Preliminary
Datasheet
RJK1576DPA
150V - 25A - MOS FET
High Speed Power Switching
Features
Low on-resistance
R
DS(on)
= 0.046
typ. (at I
D
= 12.5 A, V
GS
= 10 V, Ta = 25
C)
Low leakage current
High speed switching
R07DS0855EJ0200
Rev.2.00
Jan 10, 2013
Outline
RENESAS Package code: PWSN0008DE-A
(Package name: WPAK(3F))
5 6 7 8
D D D D
5 6 7 8
4
G
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1.
2.
3.
4.
Limited by maximum safe operation area.
PW
10
s,
duty cycle
1%
STch = 25C, Tch
150C
Value at Tc = 25C
Symbol
V
DSS
V
GSS
I
D Note1
I
D (pulse)Note2
I
DR
I
DR (pulse)Note2
I
APNote3
E
ARNote3
Pch
Note4
ch-c
Tch
Tstg
Ratings
150
±30
25
50
25
50
22
36.3
65
1.93
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0855EJ0200 Rev.2.00
Jan 10, 2013
Page 1 of 6
RJK1576DPA
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Notes: 5. Pulse test
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
Min
150
—
—
2.5
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
0.046
1200
240
34
17
31
28
10
19
7
6
0.83
105
Max
—
1
±1
4.5
0.058
—
—
—
—
—
—
—
—
—
—
1.40
—
Unit
V
A
A
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 150 V, V
GS
= 0
V
GS
=
30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 12.5 A, V
GS
= 10 V
Note5
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 12.5 A
V
GS
= 10 V
R
L
= 6
Rg = 10
V
DD
= 120 V
V
GS
= 10 V
I
D
= 25 A
I
F
= 25 A, V
GS
= 0
Note5
I
F
= 25 A, V
GS
= 0
di
F
/dt = 100 A/s
R07DS0855EJ0200 Rev.2.00
Jan 10, 2013
Page 2 of 6
RJK1576DPA
Preliminary
Main Characteristics
Maximum Safe Operation Area
1000
50
Typical Output Characteristics
7V
8V
10 V
30
6.6 V
6.2 V
Drain Current I
D
(A)
μ
s
Drain Current I
D
(A)
100
PW
10
40
5.8 V
10
Operation in this
area is limited by
R
DS(on)
Tc = 25°C
1 shot
1
10
00
=1
μ
s
1
20
5.4 V
0.1
10
V
GS
= 5 V
Ta = 25°C, Pulse Test
0
2
4
6
8
10
0.01
0.1
100
1000
0
Drain to Source Voltage V
DS
(V)
Drain to Source Voltage V
DS
(V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
R
DS(on)
(Ω)
1
V
GS
= 10 V
Ta = 25°C
Pulse Test
Typical Transfer Characteristics
100
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
10
1
Tc = 75°C
25°C
0.1
0.1
−25°C
0.01
0
2
4
6
8
10
0.01
1
10
100
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
0.20
V
GS
= 10 V
Pulse Test
0.16
I
D
= 50 A
25 A
1000
Drain Current I
D
(A)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Body-Drain Diode Reverse
Recovery Time (Typical)
Reverse Recovery Time trr (ns)
0.12
100
0.08
12.5 A
0.04
di/dt = 100 A/μs
V
GS
= 0, Ta = 25°C
10
1
10
100
0
−25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Reverse Drain Current I
DR
(A)
R07DS0855EJ0200 Rev.2.00
Jan 10, 2013
Page 3 of 6
RJK1576DPA
Typical Capacitance vs.
Drain to Source Voltage (Typical)
Drain to Source Voltage V
DS
(V)
10000
V
GS
= 0
f = 1 MHz
Ta = 25°C
Ciss
1000
Preliminary
Dynamic Input Characteristics (Typical)
I
D
= 25 A
Ta = 25
°C
V
DD
= 120 V
60 V
30 V
V
GS
300
12
200
V
DS
100
V
DD
= 120 V
60 V
30 V
5
10
15
20
25
8
Coss
100
Crss
10
0
4
20
40
60
80
0
0
0
30
Drain to Source Voltage V
DS
(V)
Gate Charge Qg (nC)
Gate to Source Cutoff Voltage V
GS(off)
(V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
50
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
6
5
4
3
2
1
0
−25
V
DS
= 10 V
Reverse Drain Current I
DR
(A)
40
V
GS
= 0 V
Ta = 25
°C
Pulse Test
30
20
I
D
= 10 mA
1 mA
0.1 mA
10
0
0
0.4
0.8
1.2
1.6
0
25
50
75
100 125 150
Source to Drain Voltage V
SD
(V)
Case Temperature
Tc (°C)
R07DS0855EJ0200 Rev.2.00
Jan 10, 2013
Page 4 of 6
Gate to Source Voltage V
GS
(V)
400
16
Capacitance C (pF)
RJK1576DPA
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
Preliminary
1
D=1
0.5
0.3
0.2
0.1
θ
ch – c(t) =
γ
s (t) •
θ
ch – c
θ
ch – c = 1.93°C/W, Tc = 25°C
P
DM
u
tp
lse
0.1
0.05
0.0
2
D=
PW
T
0.03
0.0
PW
T
1
ho
0.01
10
μ
1s
100
μ
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 75 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(on)
tr
90%
td(off)
tf
R07DS0855EJ0200 Rev.2.00
Jan 10, 2013
Page 5 of 6
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