Preliminary
Datasheet
RJK1028DPA
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 125 m
Ω
typ. (at V
GS
= 10 V)
•
Pb-free
•
Halogen-free
•
•
•
•
•
R07DS0196EJ0200
Rev.2.00
Apr 11, 2011
Outline
RENESAS Package code: PWSN0008DC-B
(Package name: WPAK(3))
5 6 7 8
D D D D
5 6 7 8
4
G
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
μs,
duty cycle
≤
1%
2. Value at Tch = 25°C, Rg
≥
50
Ω
3. Tc = 25°C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP Note 2
E
AR Note 2
Pch
Note3
θch-c
Note3
Tch
Tstg
Ratings
100
+12, -5
4
12
4
2
0.4
10
12.5
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
R07DS0196EJ0200 Rev.2.00
Apr 11, 2011
Page 1 of 6
RJK1028DPA
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
100
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
125
135
8.8
450
42
17
2.7
3.7
1.5
1.5
8.3
4.8
35
5.6
0.82
27
Max
—
± 0.1
10
2.5
165
180
—
—
—
—
—
—
—
—
—
—
—
—
1.07
—
Unit
V
μA
μA
V
mΩ
mΩ
S
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
GS
= +12, -5 V, V
DS
= 0
V
DS
= 100 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 2 A, V
GS
= 10 V
Note4
I
D
= 2 A, V
GS
= 4.5 V
Note4
I
D
= 2 A, V
DS
= 5 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
DD
= 50 V
V
GS
= 4.5 V
I
D
= 4 A
V
GS
= 10 V, I
D
= 2 A
V
DD
≅
30 V
R
L
= 15
Ω
Rg = 4.7
Ω
I
F
= 4 A, V
GS
= 0
Note4
I
F
=4 A, V
GS
= 0
di
F
/ dt = 100 A/
μs
R07DS0196EJ0200 Rev.2.00
Apr 11, 2011
Page 2 of 6
RJK1028DPA
Preliminary
Main Characteristics
Power vs. Temperature Derating
20
50
10
15
10
μs
10
1 m
0
μ
s
s
PW = 10 ms
DC
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
1
10
Op
0.1
5
Operation in
this area is
limited by R
DS(on)
Ta = 25 °C
1 shot Pulse
t io
era
n
0.01
0.001
0.1
0
50
100
150
200
0.3
1
3
10
30
100 300
Ambient Temperature Ta (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
10
Pulse Test
4.5 V 3.3 V
3.2 V
10 V
3.1 V
10
Typical Transfer Characteristics
V
DS
= 5 V
Pulse Test
I
D
(A)
6
I
D
(A)
Drain Current
8
8
Drain Current
3.0 V
6
4
2.9 V
2.8 V
4
25°C
Tc = 75°C
–25°C
2
2
V
GS
= 2.7 V
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(mV)
1200
Pulse Test
Static Drain to Source On State Resistance
vs. Drain Current
1000
Pulse Test
900
300
V
GS
= 4.5 V
100
10 V
I
D
= 5 A
600
300
2A
1A
30
0
3
6
9
12
10
0.1
0.3
1
3
10
30
100
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
R07DS0196EJ0200 Rev.2.00
Apr 11, 2011
Page 3 of 6
RJK1028DPA
Static Drain to Source On State Resistance
vs. Temperature
500
Pulse Test
I
D
= 2 A
1000
300
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
Capacitance C (pF)
400
Ciss
100
30
10
3
1
0
V
GS
= 0
f = 1 MHz
20
40
60
80
100
Coss
Crss
300
V
GS
= 4.5 V
200
10 V
100
0
–25
0
25
50
75
100 125 150
Case Temperature
Tc
(
°
C)
Drain to Source Voltage V
DS
(V)
Reverse Drain Current vs.
Source to Drain Voltage
V
GS
(V)
12
10
Dynamic Input Characteristics
V
DS
(V)
80
Reverse Drain Current I
DR
(A)
I
D
= 4 A
V
GS
9
Pulse Test
8
60
V
DS
40
V
DD
= 50 V
25 V
10 V
Drain to Source Voltage
Gate to Source Voltage
6
6
10 V
5V
4
V
GS
= 0, –5 V
20
V
DD
= 50 V
25 V
10 V
0
2
4
6
8
10
3
2
0
0
0
0.4
0.8
1.2
1.6
2.0
Gate Charge
Qg (nc)
Source to Drain Voltage V
SD
(V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy E
AR
(mJ)
0.5
I
AP
= 2 A
V
DD
= 50 V
duty < 0.1%
Rg
≥
50
Ω
0.4
0.3
0.2
0.1
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
R07DS0196EJ0200 Rev.2.00
Apr 11, 2011
Page 4 of 6
RJK1028DPA
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Preliminary
1
D=1
0.5
0.3
0.2
0.1
0.1
0.03
0.05
2
0.0
1
lse
.0
pu
0
t
ho
1s
100
μ
θch −
c(t) =
γs
(t)
• θch −
c
θch −
c = 12.5°C/W, Tc = 25°C
P
DM
PW
T
D=
PW
T
0.01
10
μ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
Avalanche Waveform
1
2
L
•
I
AP2
•
V
DSS
V
DSS
– V
DD
V
(BR)DSS
I
AP
Rg
D. U. T
V
DD
V
DS
V
DS
Monitor
L
I
AP
Monitor
E
AR
=
I
D
Vin
15 V
50
Ω
0
V
DD
Switching Time Test Circuit
Vin Monitor
D.U.T.
Rg
R
L
V
DS
= 30 V
Vin
Vout
Vin
10 V
Vout
Monitor
Switching Time Waveform
90%
10%
10%
10%
90%
td(on)
tr
90%
td(off)
tf
R07DS0196EJ0200 Rev.2.00
Apr 11, 2011
Page 5 of 6
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