Preliminary
Datasheet
RJK1001DPN-E0
N-Channel MOS FET
100 V, 80 A, 5.5 m
Features
High speed switching
Low drive current
Low on-resistance R
DS(on)
= 4.4 m typ. (at V
GS
= 10 V)
Package TO-220AB
R07DS0619EJ0200
Rev.2.00
Aug 24, 2012
Outline
RENESAS Package code: PRSS0004AG-A
(Package name: TO-220AB)
4
2, 4
D
1G
1
1. Gate
2. Drain
3. Source
4. Drain
S
3
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
I
DR
Note2
I
AP
Note2
E
AS
Pch
Note3
ch-c
Tch
Tstg
Note1
Ratings
100
±20
80
240
80
40
160
200
0.63
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at L = 100
H,
Tch = 25C, Rg
50,
3. Tc = 25C
R07DS0619EJ0200 Rev.2.00
Aug 24, 2012
Page 1 of 6
RJK1001DPN-E0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
100
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
4.4
170
10000
1500
370
1.6
147
50
30
53
20
110
22
0.85
75
Max
—
±0.1
1
4.0
5.5
—
—
—
—
—
—
—
—
—
—
—
—
1.5
—
Unit
V
A
A
V
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test conditions
I
D
= 10mA, V
GS
= 0
V
GS
=
20
V, V
DS
= 0
V
DS
= 100 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 40 A, V
GS
= 10 V
Note4
I
D
= 40 A, V
D
= 10 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
DD
= 50 V
V
GS
= 10 V,
I
D
= 40 A
V
GS
= 10 V
I
D
= 40 A
V
DD
30 V
Rg = 4.7
I
F
= 80 A, V
GS
= 0
Note4
I
F
= 80 A, V
GS
= 0
di
F
/dt = 100 A/s
R07DS0619EJ0200 Rev.2.00
Aug 24, 2012
Page 2 of 6
RJK1001DPN-E0
Preliminary
Main Characteristics
Power vs. Temperature Derating
250
1000
10
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
200
100
DC Operation
10
μ
s
0
μ
s
m
s
1
150
10
PW = 10 ms
100
1
Operation in this
area is limited by
R
DS(on)
50
0.1
0.01
0.1
Tc = 25°C
1 shot pulse
0
50
100
150
200
1
10
100
1000
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
100
5.4 V
6V
5V
100
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
10 V
Drain Current I
D
(A)
80
80
60
60
Tc = 75°C
40
V
GS
= 4.6 V
40
20
Pulse Test
0
0.2
0.4
0.6
0.8
1.0
20
25°C
−25°C
2
4
6
8
0
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
R
DS(on)
(mΩ)
100
V
GS
= 10 V
Pulse Test
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS(on)
(mV)
500
Pulse Test
300
10
300
200
40 A
20 A
I
D
= 10 A
4
8
12
16
20
1
100
0
0.1
1
10
100
1000
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
R07DS0619EJ0200 Rev.2.00
Aug 24, 2012
Page 3 of 6
RJK1001DPN-E0
Drain to Source on State Resistance
vs. Temperature
Drain to Source on State Resistance
R
DS(on)
(mΩ)
20
Pulse Test
V
DS
= 40 V
I
D
= 40 A
16
100000
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Ciss
Capacitance C (pF)
10000
12
8
1000
Coss
4
0
−25
Crss
100
0.1
0
25
50
75
100 125 150
1
10
100
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Reverse Drain Current vs.
Source to Drain Voltage
100
Dynamic Input Characteristics
Gate to Source Voltage V
GS
(V)
20
I
DR
(A)
I
D
= 40 A
V
DD
= 10 V
25 V
50 V
Pulse Test
80
10 V
16
12
Reverse Drain Current
60
8
40
V
GS
= 0 V
4
20
0
40
80
120
160
200
0
0.5
1.0
1.5
2.0
Gate Charge Qg (nC)
Source to Drain Voltage V
SD
(V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
200
I
AP
= 40 A
V
DD
= 50 V
duty < 0.1%
Rg
≥
50
Ω
Avalanche Energy E
AS
(mJ)
150
100
50
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
R07DS0619EJ0200 Rev.2.00
Aug 24, 2012
Page 4 of 6
RJK1001DPN-E0
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
10.0
Preliminary
3
1
D=1
0.5
0.3
0.2
0.1
0.1
0.05
θch
– c(t) =
γs
(t) •
θch
– c
θch
– c = 0.63°C/W, Tc = 25°C
0.02
0.01
P
DM
PW
T
D=
PW
T
0.03
1shot pulse
0.01
100
μ
1m
10 m
100 m
1
10
Pulse Width
PW (s)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
25
Ω
Vin
10 V
V
DD
= 30 V
td(on)
Vout
Monitor
Vin
Vout
10%
10%
Waveform
90%
10%
90%
td(off)
tf
90%
tr
R07DS0619EJ0200 Rev.2.00
Aug 24, 2012
Page 5 of 6
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