Preliminary
Datasheet
RJK0659DPA
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 6.5 m
Ω
typ. (at V
GS
= 10 V)
•
Pb-free
•
Halogen-free
•
•
•
•
R07DS0345EJ0100
Rev.1.00
Apr 06, 2011
Outline
RENESAS Package code: PWSN0008DC-B
(Package name: WPAK(3))
5 6 7 8
D D D D
5 6 7 8
4
G
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
μs,
duty cycle
≤
1%
2. Value at Tch = 25°C, Rg
≥
50
Ω
3. Tc = 25°C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP
E
AR Note 2
Pch
Note3
θch-c
Note3
Tch
Tstg
Note 2
Ratings
60
±20
30
120
30
15
16.9
55
2.27
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
R07DS0345EJ0100 Rev.1.00
Apr 06, 2011
Page 1 of 6
RJK0659DPA
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
60
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
6.5
47
2400
550
150
1.3
30.6
13
5.1
14
12
40
10
0.8
47
Max
—
±0.1
1
4.0
8.0
—
—
—
—
—
—
—
—
—
—
—
—
1.1
—
Unit
V
μA
μA
V
mΩ
S
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
I
D
= 15 A, V
GS
= 10 V
Note4
I
D
= 15 A, V
DS
= 10 V
Note4
V
DS
= 10 V, V
GS
= 0 V,
f = 1 MHz
V
DD
= 25 V, V
GS
= 10 V,
I
D
= 30 A
V
GS
= 10 V, I
D
= 15 A,
V
DD
≅
30 V, R
L
= 2
Ω,
Rg = 4.7
Ω
I
F
= 30 A, V
GS
= 0 V
Note4
I
F
= 30 A, V
GS
= 0 V
di
F
/ dt = 100 A/
μs
R07DS0345EJ0100 Rev.1.00
Apr 06, 2011
Page 2 of 6
RJK0659DPA
Preliminary
Main Characteristics
Power vs. Temperature Derating
80
1000
Maximum Safe Operation Area
Tc = 25°C
1 shot Pulse
Channel Dissipation Pch (W)
10
μs
60
Drain Current I
D
(A)
100
10
0
μ
s
10
1 ms
1
PW = 10 ms
40
20
Operation in
0.1 this area is
limited by R
DS(on)
0.01
0.1
1
DC Operation
10
100
0
50
100
150
200
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
50
5.2 V
5V
6V
Pulse Test
4.8 V
50
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
7 V, 10 V
30
Drain Current I
D
(A)
40
40
4.6 V
30
20
20
Tc = 75°C
25°C
–25°C
V
GS
= 4.4 V
10
10
0
2
4
6
8
10
0
2
4
6
8
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
Drain to Source Saturation Voltage
V
DS (on)
(mV)
400
Pulse Test
300
10
200
I
D
= 20 A
5A
10 A
0.1
1
1
V
GS
= 10 V
100
0
4
8
12
16
20
10
100
1000
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
R07DS0345EJ0100 Rev.1.00
Apr 06, 2011
Page 3 of 6
RJK0659DPA
Static Drain to Source on State Resistance
vs. Temperature
20
16
Pulse Test
I
D
= 15 A
10000
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
Capacitance C (pF)
Ciss
1000
Coss
100
V
GS
= 0 V
f = 1 MHz
Crss
12
V
GS
= 10 V
8
4
0
–25
10
0
25
50
75
100 125 150
0
10
20
30
40
50
60
Case Temperature Tc (
°
C)
Drain to Source Voltage V
DS
(V)
Reverse Drain Current vs.
Source to Drain Voltage
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Reverse Drain Current I
DR
(A)
I
D
= 30 A
Gate to Source Voltage V
GS
(V)
100
20
50
Pulse Test
10 V
40
80
V
DD
= 50 V
25 V
10 V
V
GS
16
60
V
DS
12
30
40
8
20
V
GS
= 0 V
20
V
DD
= 50 V
25 V
10 V
0
8
16
24
32
4
10
0
0
40
0
0.4
0.8
1.2
1.6
2.0
Gate Charge Qg (nC)
Source to Drain Voltage V
SD
(V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy E
AR
(mJ)
30
I
AP
= 15 A
V
DD
= 20 V
duty < 0.1 %
Rg
≥
50
Ω
24
18
12
6
0
25
50
75
100
125
150
Channel Temperature Tch (
°C)
R07DS0345EJ0100 Rev.1.00
Apr 06, 2011
Page 4 of 6
RJK0659DPA
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
1
Preliminary
D=1
0.5
0.3
0.2
0.1
0.1
θch
– c (t) =
γ
s (t) •
θch
– c
θch
– c = 2.27°C/W, Tc = 25°C
P
DM
PW
T
1m
10 m
100 m
1
10
D=
PW
T
0.05
0.03
2
0.0
ls e
1
t pu
0.0
ho
1s
0.01
10
μ
100
μ
Pulse Width PW (s)
Avalanche Test Circuit
Avalanche Waveform
1
2
L
•
I
AP2
•
V
DSS
V
DSS
– V
DD
V
(BR)DSS
I
AP
V
DD
V
DS
V
DS
Monitor
L
I
AP
Monitor
E
AR
=
Rg
D. U. T
I
D
Vin
15 V
0
V
DD
Switching Time Test Circuit
Vin Monitor
D.U.T.
Rg
R
L
V
DS
= 30 V
Vin
Vout
Vin
10 V
Vout
Monitor
Switching Time Waveform
90%
10%
10%
10%
90%
td(on)
tr
90%
td(off)
tf
R07DS0345EJ0100 Rev.1.00
Apr 06, 2011
Page 5 of 6
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
