Preliminary
Datasheet
RJK0636JPD
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
For Automotive application
AEC-Q101 compliant
Low on-resistance : R
DS(on)
= 18 m
typ.
Capable of 4.5 V gate drive
Low input capacitance : Ciss = 750 pF typ
R07DS0365EJ0100
Rev.1.00
Aug 24, 2011
Outline
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S))
4
2, 4
D
1
1G
2
3
1. Gate
2. Drain
3. Source
4. Drain
S
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1.
2.
3.
4.
PW
10
s,
duty cycle
1%
Tch = 25C, Rg
50
Tc = 25C
AEC-Q101 compliant
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP Note2
E
AR
Pch
Note3
Tch
Note4
Tstg
Note2
Ratings
60
±20
25
100
25
19
30.9
30
175
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
C
C
Thermal Impedance Characteristics
Channel to case thermal impedance
ch-c:
5°C/W
R07DS0365EJ0100 Rev.1.00
Aug 24, 2011
Page 1 of 6
RJK0636JPD
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 5. Pulse test
Symbol
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
Ciss
Coss
Crss
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
18
25
750
210
150
18
2.5
5.5
10
13
50
13
0.93
40
Max
10
1
2.0
22
34
—
—
—
—
—
—
—
—
—
—
—
—
Unit
A
A
V
m
m
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
V
GS
=
20
V, V
DS
= 0
V
DS
= 60 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
Note5
I
D
= 13 A, V
GS
= 10 V
Note5
I
D
= 13 A, V
GS
= 10 V
Note5
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
V
DD
= 25 V, V
GS
= 10 V,
I
D
= 25 A
I
D
= 13 A, R
L
= 2.3
,
V
GS
= 10 V, Rg = 4.7
I
F
= 25 A, V
GS
= 0
Note5
I
F
= 25 A, V
GS
= 0
di
F
/ dt = 100 A/
s
R07DS0365EJ0100 Rev.1.00
Aug 24, 2011
Page 2 of 6
RJK0636JPD
Preliminary
Main Characteristics
Power vs. Temperature Derating
50
1000
Maximum Safe Operation Area
Tc = 25°C
1 shot Pulse
10
Pch (W)
Drain Current I
D
(A)
40
100
μ
s
10
0
μ
s
1
Channel Dissipation
30
10
s
m
PW
=
20
1
Operation
in this area
is limited R
DS(on)
10
s
m
10
0.1
DC Operation
0
50
100
150
200
0.01
0.1
1
10
100
Case Temperature
Tc (°C)
Drain to Source Voltage
V
DS
(V)
Typical Output Characteristics
25
10 V
4.5 V
3.0 V
100
10
Typical Transfer Characteristics
Drain Current I
D
(A)
Drain Current I
D
(A)
20
2.8 V
15
2.6 V
10
2.4 V
5
Tc = 25°C
Pulse Test
0
5
V
GS
= 0 V
10
Tc = 175°C
25°C
−40°C
1
0.1
0.01
0.001
0
V
DS
= 10 V
Pulse Test
1
2
3
4
Drain to Source Voltage V
DS
(V)
Drain Source Saturation Voltage vs.
Gate to Source Voltage
100
I
D
= 13 A
Pulse Test
80
60
Tc = 175°C
40
25°C
20
0
0
−40°C
4
8
12
16
20
Gate to Source Voltage V
GS
(V)
Static Drain to Source State Resistance
vs. Drain Current
100
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
V
GS
= 4.5 V
10 V
10
1
1
10
Tc = 25°C
Pulse Test
100
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
R07DS0365EJ0100 Rev.1.00
Aug 24, 2011
Page 3 of 6
RJK0636JPD
Static Drain to Source on State Resistance
vs. Temperature
75
Pulse Test
I
D
= 13 A
10000
Tc = 25°C
V
GS
= 0
f = 1 MHz
1000
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
50
V
GS
= 4.5 V
Capacitance C (pF)
Ciss
Coss
100
Crss
25
10 V
0
−50
10
0
50
100
150
200
0
5
10
15
20
25
30
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Reverse Drain Current I
DR
(A)
Tc = 25°C
I
D
= 10 A
V
DD
= 50 V
25 V
10 V
V
DS
Reverse Drain Current vs.
Source to Drain Voltage
Gate to Source Voltage V
GS
(V)
20
25
Tc = 25°C
Pulse Test
20
10 V
100
V
GS
80
16
60
12
15
40
8
10
V
GS
= 0,
−5
V
20
V
DD
= 50 V
25 V
10 V
5
10
15
20
4
0
25
5
0
0
0.4
0.8
1.2
1.6
2.0
Gate Charge Qg (nC)
Source to Drain Voltage V
SD
(V)
Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy E
AR
(mJ)
50
I
AP
= 19 A
V
DD
= 25 V
duty < 0.1 %
Rg
≥
50
Ω
40
30
20
10
0
25
50
75
100
125
150
175
Channel Temperature Tch (°C)
R07DS0365EJ0100 Rev.1.00
Aug 24, 2011
Page 4 of 6
RJK0636JPD
Normalized Transient Thermal Impedance
γ
s (t)
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width
10
1
D=1
0.5
0.2
0.1
0.1
0.05
u
tp
lse
0.01
0.02
0.01
1s
ho
θch
– c(t) =
γs
(t) •
θch
– c
θch
– c = 5°C/W, Tc = 25°C
P
DM
PW
T
D=
PW
T
0.001
10
μ
100
μ
1m
10 m
100 m
Pulse Width PW (s)
Avalanche Test Circuit
V
DS
Monitor
L
I
AP
Monitor
Avalanche Waveform
E
AR
=
1
2
L
•
I
AP
•
2
V
DSS
V
DSS
– V
DD
V
(BR)DSS
Rg
D. U. T
V
DD
I
AP
V
DS
Vin
15 V
50
Ω
I
D
0
V
DD
Switching Time Test Circuit
Vin Monitor
D.U.T.
Rg
R
L
V
DS
= 30 V
Vin
Vout
Vin
10 V
Vout
Monitor
Switching Time Waveform
90%
10%
10%
10%
90%
td(on)
tr
90%
td(off)
tf
R07DS0365EJ0100 Rev.1.00
Aug 24, 2011
Page 5 of 6
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