Preliminary
Datasheet
RJK0390DPA
30V, 65A, 2.2m max.
N Channel Power MOS FET
High Speed Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
Pb-free
Halogen-free
R07DS0922EJ0300
Rev.3.00
Mar 21, 2013
Outline
RENESAS Package code: PWSN0008DE-A
(Package name: WPAK(3F))
5 6 7 8
D D D D
5 6 7 8
4
G
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tch = 25C, Rg
50
3. Tc = 25C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP Note 2
E
AR Note 2
Pch
Note3
ch-c
Note3
Tch
Tstg
Ratings
30
±20
65
260
65
30
90
60
2.08
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS0922EJ0300 Rev.3.00
Mar 21, 2013
Page 1 of 6
RJK0390DPA
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
30
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
1.7
2.1
200
8900
1120
570
0.80
54
25
11.3
22
10.8
92
37
0.79
45
Max
—
± 0.5
1
2.5
2.2
2.9
—
—
—
—
—
—
—
—
—
—
—
—
1.03
—
Unit
V
A
A
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
GS
= ±20 V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 32.5 A, V
GS
= 10 V
Note4
I
D
= 32.5 A, V
GS
= 4.5 V
Note4
I
D
= 32.5 A, V
DS
= 10 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
DD
= 10 V
V
GS
= 4.5 V
I
D
= 65 A
V
GS
= 10 V, I
D
= 32.5 A
V
DD
10 V
R
L
= 0.31
Rg = 4.7
I
F
= 65 A, V
GS
= 0
Note4
I
F
=65 A, V
GS
= 0
di
F
/ dt = 100 A/
s
R07DS0922EJ0300 Rev.3.00
Mar 21, 2013
Page 2 of 6
RJK0390DPA
Preliminary
Main Characteristics
Power vs. Temperature Derating
80
1000
Maximum Safe Operation Area
Pch (W)
I
D
(A)
Drain Current
60
100
Channel Dissipation
40
10
1 ms
PW = 10 ms
DC
n
tio
era
Op
20
1
Operation in
this area is
limited by R
DS(on)
0
50
100
150
200
Tc = 25°C
0.1 1 shot Pulse
0.1
1
10
100
Case Temperature
Tc (°C)
Drain to Source Voltage
V
DS
(V)
Typical Output Characteristics
100
4.5 V
10 V
Pulse Test
3.4 V
3.2 V
60
100
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
I
D
(A)
I
D
(A)
Drain Current
80
80
60
Drain Current
40
3.0 V
20
40
25°C
–25°C
0
20
V
GS
= 2.8 V
0
0
2
4
6
8
10
0
1
Tc = 75°C
2
3
4
5
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(mV)
80
Pulse Test
Static Drain to Source On State Resistance
vs. Drain Current
100
Pulse Test
30
10
3
1
0.3
0.1
1
3
10
30
100
300 1000
V
GS
= 4.5 V
10 V
60
40
I
D
= 20 A
20
10 A
5A
0
4
8
12
16
20
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
R07DS0922EJ0300 Rev.3.00
Mar 21, 2013
Page 3 of 6
RJK0390DPA
Static Drain to Source On State Resistance
vs. Temperature
6.0
Pulse Test
100000
30000
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
Capacitance C (pF)
4.8
I
D
= 5 A, 10 A, 20 A
V
GS
= 4.5 V
10000
3000
Ciss
3.6
2.4
Coss
1000
300
100
0
V
GS
= 0
f = 1 MHz
10
20
Crss
30
1.2
0
–25
10 V
5 A, 10 A, 20 A
0
25
50
75
100 125 150
Case Temperature
Tc
(
°
C)
Drain to Source Voltage V
DS
(V)
Reverse Drain Current vs.
Source to Drain Voltage
V
GS
(V)
20
100
Dynamic Input Characteristics
V
DS
(V)
50
40
V
DD
= 25 V
10 V
V
DS
V
GS
16
Reverse Drain Current I
DR
(A)
I
D
= 65 A
10 V
Pulse Test
80
5V
Drain to Source Voltage
30
12
Gate to Source Voltage
60
20
8
40
V
GS
= 0, –5 V
10
V
DD
= 25 V
10 V
0
40
80
120
160
4
20
0
0
200
0
0.4
0.8
1.2
1.6
2.0
Gate Charge
Qg (nC)
Source to Drain Voltage V
SD
(V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy E
AR
(mJ)
100
80
60
40
20
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
R07DS0922EJ0300 Rev.3.00
Mar 21, 2013
Page 4 of 6
RJK0390DPA
Normalized Transient Thermal Impedance vs. Pulse Width
3
Preliminary
1
D=1
0.5
0.3
0.2
0.1
0.1
0.05
0.03
2
lse
0.0
pu
1
0.0
hot
1s
P
DM
PW
T
D=
PW
T
0.01
1m
10 m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
Avalanche Waveform
1
2
L
•
I
AP2
•
V
DSS
V
DSS
– V
DD
V
(BR)DSS
I
AP
Rg
D. U. T
V
DD
V
DS
V
DS
Monitor
L
I
AP
Monitor
E
AR
=
I
D
Vin
15 V
0
V
DD
Switching Time Test Circuit
Vin Monitor
D.U.T.
Rg
R
L
V
DS
= 10 V
Vin
Vout
Vin
10 V
Vout
Monitor
Switching Time Waveform
90%
10%
10%
10%
90%
td(on)
tr
90%
td(off)
tf
R07DS0922EJ0300 Rev.3.00
Mar 21, 2013
Page 5 of 6
测试/测量
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