Preliminary
Datasheet
RJK0365DPA-02
30V, 30A, 8.4m max.
N Channel Power MOS FET
High Speed Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
Pb-free
Halogen-free
R07DS0919EJ0300
Rev.3.00
Mar 21, 2013
Outline
RENESAS Package code: PWSN0008DE-A
(Package name: WPAK(3F))
5 6 7 8
D D D D
5 6 7 8
4
G
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tch = 25C, Rg
50
3. Tc = 25C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP Note 2
E
AR Note 2
Pch
Note3
ch-c
Note3
Tch
Tstg
Ratings
30
±20
30
120
30
12
14.4
30
4.17
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS0919EJ0300 Rev.3.00
Mar 21, 2013
Page 1 of 6
RJK0365DPA-02
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
30
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
6.3
8.9
60
1180
230
80
0.8
7.6
3.0
1.7
5.4
4.0
34
4.3
0.87
20
Max
—
± 0.1
1
2.5
8.4
12.7
—
—
—
—
—
—
—
—
—
—
—
—
1.13
—
Unit
V
A
A
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
GS
= ±20 V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 15 A, V
GS
= 10 V
Note4
I
D
= 15 A, V
GS
= 4.5 V
Note4
I
D
= 15 A, V
DS
= 10 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
DD
= 10 V
V
GS
= 4.5 V
I
D
= 30 A
V
GS
= 10 V, I
D
= 15 A
V
DD
10 V
R
L
= 0.66
Rg = 4.7
I
F
= 30 A, V
GS
= 0
Note4
I
F
=30 A, V
GS
= 0
di
F
/ dt = 100 A/
s
R07DS0919EJ0300 Rev.3.00
Mar 21, 2013
Page 2 of 6
RJK0365DPA-02
Preliminary
Main Characteristics
Power vs. Temperature Derating
80
1000
Maximum Safe Operation Area
Pch (W)
I
D
(A)
60
100
1
m
s
Channel Dissipation
Drain Current
40
10
PW = 10 ms
DC
Op
20
1
Operation in
this area is
limited by R
DS(on)
at
er
ion
0
50
100
150
200
Tc = 25°C
0.1 1 shot Pulse
0.1
1
10
100
Case Temperature
Tc (°C)
Drain to Source Voltage
V
DS
(V)
Typical Output Characteristics
50
4.5 V
10 V
Pulse Test
50
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
I
D
(A)
3.2 V
30
3.0 V
20
2.8 V
10
I
D
(A)
Drain Current
40
40
30
Drain Current
20
25°C
Tc = 75°C
–25°C
V
GS
= 2.6 V
10
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(mV)
200
Pulse Test
Static Drain to Source On State Resistance
vs. Drain Current
100
Pulse Test
150
30
100
10
V
GS
= 4.5 V
I
D
= 10 A
50
5A
2A
10 V
3
0
4
8
12
16
20
1
1
3
10
30
100
300 1000
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
R07DS0919EJ0300 Rev.3.00
Mar 21, 2013
Page 3 of 6
RJK0365DPA-02
Static Drain to Source On State Resistance
vs. Temperature
25
Pulse Test
10000
3000
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
Capacitance C (pF)
20
I
D
= 2 A, 5 A, 10 A
V
GS
= 4.5 V
Ciss
1000
300
100
30
10
0
V
GS
= 0
f = 1 MHz
10
20
30
Coss
Crss
15
10
5
0
–25
10 V
2 A, 5 A, 10 A
0
25
50
75
100 125 150
Case Temperature
Tc
(
°
C)
Drain to Source Voltage V
DS
(V)
Reverse Drain Current vs.
Source to Drain Voltage
V
GS
(V)
20
50
Dynamic Input Characteristics
V
DS
(V)
50
Reverse Drain Current I
DR
(A)
I
D
= 30 A
V
GS
16
V
DD
= 25 V
10 V
Pulse Test
10 V
40
5V
40
Drain to Source Voltage
30
V
DS
12
Gate to Source Voltage
30
20
8
20
V
GS
= 0, –5 V
10
V
DD
= 25 V
10 V
0
10
20
30
40
4
10
0
50
0
0
0.4
0.8
1.2
1.6
2.0
Gate Charge
Qg (nc)
Source to Drain Voltage V
SD
(V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy E
AR
(mJ)
20
16
12
8
4
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
R07DS0919EJ0300 Rev.3.00
Mar 21, 2013
Page 4 of 6
RJK0365DPA-02
Normalized Transient Thermal Impedance
vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc =
25°C
1
Preliminary
D
=
1
0.5
0.3
0.2
0
.1
0
.
05
0
.
0
2
e
01
l
s
0
.
t pu
ho
1s
0.1
θch
–
c (t)
=
γ
s (t)
•
θch
–
c
θch
–
c
= 4.17°C/W, Tc =
25°C
P
DM
PW
T
100
μ
1m
10 m
100 m
1
10
D
=
PW
T
0.03
0.01
10
μ
Pulse Width PW (s)
Avalanche
Test
Circuit
Avalanche Waveform
1
2
L
•
I
AP2
•
V
DSS
V
DSS
–
V
DD
V
(BR)DSS
I
AP
V
DD
V
DS
V
DS
Monitor
L
I
AP
Monitor
E
AR
=
Rg
D.
U. T
I
D
Vin
15 V
50
Ω
0
V
DD
Switching
Time Test
Circuit
Vin Monitor
D.U.T.
Rg
R
L
V
DS
=
10 V
Vin
Vout
Vin
10 V
Vout
Monitor
Switching
Time
Waveform
90%
10%
10%
10%
90%
td(on)
tr
90%
td(off)
tf
R07DS0919EJ0300 Rev.3.00
Mar 21, 2013
Page 5 of 6
MEMS传感器
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