Preliminary
Datasheet
RJK0358DPA
30V, 38A, 3.4m max.
N Channel Power MOS FET
High Speed Power Switching
Features
High speed switching
Capable of 5 V gate drive
Low drive current
High density mounting
Low on-resistance
Pb-free
Halogen-free
R07DS0917EJ0600
Rev.6.00
Mar 19, 2013
Outline
RENESAS Package code: PWSN0008DE-A
(Package name: WPAK(3F))
5 6 7 8
D D D D
5 6 7 8
4
G
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tch = 25C, Rg
50
3. Tc = 25C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP Note 2
E
AR Note 2
Pch
Note3
ch-c
Note3
Tch
Tstg
Ratings
30
±20
38
152
38
19
36.1
45
2.78
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS0917EJ0600 Rev.6.00
Mar 19, 2013
Page 1 of 6
RJK0358DPA
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
30
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
2.6
3.8
50
4300
500
280
33
13
8
11
5.8
68
12
0.84
30
Max
—
± 0.1
1
2.5
3.4
5.4
—
—
—
—
—
—
—
—
—
—
—
1.10
—
Unit
V
A
A
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
GS
= ±20 V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 19 A, V
GS
= 10 V
Note4
I
D
= 19 A, V
GS
= 5 V
Note4
I
D
= 19 A, V
DS
= 10 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
DD
= 10 V
V
GS
= 5 V
I
D
= 38 A
V
GS
= 10 V, I
D
= 19 A
V
DD
10 V
R
L
= 0.53
Rg = 4.7
I
F
= 38 A, V
GS
= 0
Note4
I
F
=38 A, V
GS
= 0
di
F
/ dt = 100 A/
s
R07DS0917EJ0600 Rev.6.00
Mar 19, 2013
Page 2 of 6
RJK0358DPA
Preliminary
Main Characteristics
Power vs. Temperature Derating
80
1000
Maximum Safe Operation Area
Pch (W)
I
D
(A)
10
μs
100
0
10
μ
s
60
Channel Dissipation
Drain Current
40
10
1 ms
PW = 10 ms
DC
Op
20
1
Operation in
this area is
limited by R
DS(on)
on
ati
er
0
50
100
150
200
Tc = 25°C
0.1 1 shot Pulse
0.1
1
10
100
Case Temperature
Tc (°C)
Drain to Source Voltage
V
DS
(V)
Typical Output Characteristics
50
4.5 V
10 V
Pulse Test
3.2 V
50
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
I
D
(A)
30
I
D
(A)
Drain Current
2.8 V
40
40
Drain Current
3.0 V
30
20
20
25°C
–25°C
10
V
GS
= 2.6 V
10
Tc = 75°C
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Static Drain to Source On State Resistance
R
DS (on)
(mΩ)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(mV)
80
Pulse Test
Static Drain to Source On State Resistance
vs. Drain Current
100
Pulse Test
60
30
40
10
V
GS
= 5 V
3
10 V
1
1
I
D
= 10 A
20
5A
2A
0
4
8
12
16
20
3
10
30
100
300 1000
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
R07DS0917EJ0600 Rev.6.00
Mar 19, 2013
Page 3 of 6
RJK0358DPA
Static Drain to Source On State Resistance
vs. Temperature
10
Pulse Test
10000
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
Ciss
3000
Static Drain to Source On State Resistance
R
DS (on)
(mΩ)
Capacitance C (pF)
8
I
D
= 2 A, 5 A, 10 A
V
GS
= 5 V
1000
Coss
300
Crss
100
30
10
0
V
GS
= 0
f = 1 MHz
10
20
30
6
4
2
0
–25
10 V
2 A, 5 A, 10 A
0
25
50
75
100 125 150
Case Temperature
Tc
(
°
C)
Drain to Source Voltage V
DS
(V)
Reverse Drain Current vs.
Source to Drain Voltage
V
GS
(V)
20
50
Dynamic Input Characteristics
V
DS
(V)
50
Reverse Drain Current I
DR
(A)
I
D
= 38 A
V
GS
V
DD
= 25 V
10 V
V
DS
Pulse Test
10 V
40
5V
40
16
Drain to Source Voltage
30
12
Gate to Source Voltage
30
20
8
20
V
GS
= 0, –5 V
10
V
DD
= 25 V
10 V
0
20
40
60
80
4
10
0
0
100
0
0.4
0.8
1.2
1.6
2.0
Gate Charge
Qg (nc)
Source to Drain Voltage V
SD
(V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy E
AR
(mJ)
50
I
AP
= 19 A
V
DD
= 15 V
duty < 0.1 %
Rg
≥
50
Ω
40
30
20
10
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
R07DS0917EJ0600 Rev.6.00
Mar 19, 2013
Page 4 of 6
RJK0358DPA
Normalized Transient Thermal Impedance
vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc =
25°C
1
Preliminary
D
=
1
0.5
0.3
0.2
0.1
0
.1
θch
–
c (t)
=
γ
s (t)
•
θch
–
c
θch
–
c
=
2.78°C/W,
Tc =
25°C
P
DM
PW
T
1m
10 m
100 m
1
10
D
=
PW
T
0
.
05
0.03
2
0
.
0
l
se
1
t pu
0
.
0
ho
1s
0.01
10
μ
100
μ
Pulse Width PW (s)
Avalanche
Test
Circuit
Avalanche Waveform
1
2
L
•
I
AP2
•
V
DSS
V
DSS
–
V
DD
V
(BR)DSS
I
AP
V
DD
V
DS
V
DS
Monitor
L
I
AP
Monitor
E
AR
=
Rg
D.
U. T
I
D
Vin
15 V
50
Ω
0
V
DD
Switching
Time Test
Circuit
Vin Monitor
D.U.T.
Rg
R
L
V
DS
=
10 V
Vin
Vout
Vin
10 V
Vout
Monitor
Switching
Time
Waveform
90%
10%
10%
10%
90%
td(on)
tr
90%
td(off)
tf
R07DS0917EJ0600 Rev.6.00
Mar 19, 2013
Page 5 of 6
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