Preliminary
Datasheet
RJH1CV7DPK
1200V - 35A - IGBT
Application: Inverter
Features
Short circuit withstand time (5
s
typ.)
Low collector to emitter saturation voltage
V
CE(sat)
= 1.8 V typ. (at I
C
= 35 A, V
GE
= 15 V, Ta = 25°C)
Built-in fast recovery diode (t
rr
= 200 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
t
f
= 280 ns typ. (at V
CC
= 600 V, V
GE
= 15 V, I
C
= 35 A, Rg = 5
,
Ta = 25°C, inductive load)
R07DS0748EJ0300
Rev.3.00
Feb 14, 2013
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
C
4
G
1. Gate
2. Collector
3. Emitter
4. Collector
E
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tc = 25C
Symbol
V
CES
/ V
R
V
GES
I
C
I
C
ic(peak)
Note1
I
DF
i
DF
(peak)
Note1
P
C Note2
j-c
Note2
j-cd
Note2
Tj
Tstg
Ratings
1200
30
70
35
105
35
105
320
0.39
0.69
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
°C/W
°C/W
°C
°C
R07DS0748EJ0300 Rev.3.00
Feb 14, 2013
Page 1 of 9
RJH1CV7DPK
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Zero gate voltage collector current
/ Diode reverse current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Short circuit withstand time
Symbol
I
CES
/I
R
I
GES
V
GE(off)
V
CE(sat)
V
CE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
sc
Min
—
—
4.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
1.8
2.5
2075
100
55
166
20
95
53
45
185
280
3.2
2.5
5.7
5
Max
5
±1
6.5
2.3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
A
A
V
V
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
s
Test Conditions
V
CE
= 1200 V, V
GE
= 0
V
GE
= ±30 V, V
CE
= 0
V
CE
= 10 V, I
C
= 1 mA
I
C
= 35 A, V
GE
= 15 V
Note3
I
C
= 70 A, V
GE
= 15 V
Note3
V
CE
= 25 V
V
GE
= 0
f = 1 MHz
V
GE
= 15 V
V
CE
= 300 V
I
C
= 35 A
V
CC
= 600 V
V
GE
= 15 V
I
C
= 35 A
Rg = 5
Inductive load
V
CC
720 V, V
GE
= 15 V
Tc
125°C
I
F
= 35 A
Note3
I
F
= 35 A
di
F
/dt = 100 A/s
FRD forward voltage
FRD reverse recovery time
FRD reverse recovery charge
FRD peak reverse recovery current
Notes: 3. Pulse test.
V
F
t
rr
Q
rr
I
rr
—
—
—
—
2.1
200
0.7
9.6
—
—
—
—
V
ns
C
A
R07DS0748EJ0300 Rev.3.00
Feb 14, 2013
Page 2 of 9
RJH1CV7DPK
Preliminary
Main Characteristics
Collector
Dissipation vs.
Case
Temperature
400
80
Maximum DC
Collector Current
vs.
Case
Temperature
Collector
Dissipation
Pc (W)
300
Collector Current
I
C
(A)
0
25
50
75
100 125 150 175
60
200
40
100
20
0
0
0
25
50
75
100 125 150 175
Case
Temperature Tc
(°C)
Case
Temperature Tc
(°C)
Maximum
Safe Operation Area
1000
120
Turn-off
SOA
Collector Current
I
C
(A)
100
10
0
P
W
μ
s
=
10
10
μ
s
Collector Current
I
C
(A)
10000
100
80
60
40
20
0
1
0.1
Tc =
25°C
Single
pulse
10
100
1000
0.01
1
0
400
800
1200
1600
Collector to
Emitter Voltage V
CE
(V)
Collector to
Emitter Voltage V
CE
(V)
Typical
Output Characteristics
100
Tc =
25
°
C
Pulse
Test
100
Typical
Output Characteristics
Tc =
150
°
C
Pulse
Test
15
V
15
V
Collector Current
I
C
(A)
80
60
40
20
V
GE
= 8 V
0
0
1
2
3
4
5
10
V
Collector Current
I
C
(A)
12
V
80
60
40
20
0
0
1
2
3
4
12
V
10
V
V
GE
= 8 V
5
Collector to
Emitter Voltage V
CE
(V)
Collector to
Emitter Voltage V
CE
(V)
R07DS0748EJ0300 Rev.3.00
Feb 14, 2013
Page 3 of 9
RJH1CV7DPK
Collector to
Emitter
Satularion
Voltage vs.
Gate to
Emitter Voltage
(Typical)
5
Preliminary
Collector to
Emitter
Satularion
Voltage vs.
Gate to
Emitter Voltage
(Typical)
5
Collector to
Emitter
Satularion
Voltage
V
CE(sat)
(V)
Collector to
Emitter
Satularion
Voltage
V
CE(sat)
(V)
4
4
I
C
= 70
A
3
35 A
2
Tc =
150
°
C
Pulse
Test
1
8
10
12
14
16
18
20
3
I
C
= 70
A
2
Tc =
25
°
C
Pulse
Test
1
8
10
12
14
16
18
20
35 A
Gate to
Emitter Voltage V
GE
(V)
Gate to
Emitter Voltage V
GE
(V)
Collector to
Emitter
Saturation
Voltage
vs.
Case
Temparature
(Typical)
Typical Transfer
Characteristics
Collector to
Emitter
Saturation
Voltage
V
CE(sat)
(V)
4.0
3.5
3.0
2.5
35 A
2.0
1.5
1.0
−25
V
GE
=
15
V
Pulse
Test
I
C
= 70
A
100
Collector Current
I
C
(A)
80
60
40
20
Tc=
25
°
C
150
°
C
V
CE
=
10
V
Pulse
Test
0
0
4
8
12
16
20
0
25
50
75
100 125 150
Gate to
Emitter Voltage V
GE
(V)
Gate to
Emitter
Cutoff
Voltage
vs.
Case
Temparature
(Typical)
10
30
Case
Temparature Tc
(
°
C)
Gate to
Emitter
Cutoff
Voltage V
GE(off)
(V)
Frequency
Characteristics (Typical)
Collector Current
I
C(RMS)
(A)
8
I
C
=
10 mA
6
25
0
20
15
10
5
0
1
Collector current
wave
(Square
wave)
4
1 mA
2
V
CE
=
10
V
Pulse
Test
0
−25
0
25
50
75
100 125 150
Tj =
125°C
Tc = 90°C
V
CE
= 400 V
V
GE
=
15
V
Rg
= 5
Ω
duty
= 50%
10
100
1000
Case
Temparature Tc
(
°
C)
Frequency f
(kHz)
R07DS0748EJ0300 Rev.3.00
Feb 14, 2013
Page 4 of 9
RJH1CV7DPK
Switching Characteristics (Typical) (1)
Preliminary
Switching Characteristics (Typical) (2)
Swithing
Energy Losses E
(mJ)
1000
t
f
100
V
CC
= 600 V, V
GE
=
15
V
Rg
= 5
Ω,
Tc =
150
°
C
10
Eon
Eoff
1
Switching
Times
t (ns)
td(off)
100
td(on)
tr
10
1
1
V
CC
= 600 V, V
GE
=
15
V
Rg
= 5
Ω,
Tc =
150
°
C
10
100
0.1
1
10
100
Collector Current
I
C
(A)
(Inductive
load)
Switching Characteristics (Typical) (3)
1000
Collector Current
I
C
(A)
(Inductive
load)
Switching Characteristics (Typical) (4)
10
Swithing
Energy Losses E
(mJ)
Eon
Switching
Times
t (ns)
t
f
td(off)
100
tr
td(on)
V
CC
= 600 V, V
GE
=
15
V
I
C
=
35 A,
Tc =
150
°
C
1
10
100
Eoff
1
10
0.1
1
V
CC
= 600 V, V
GE
=
15
V
I
C
=
35 A,
Tc =
150
°
C
10
100
Gate Registance Rg (Ω)
(Inductive
load)
Gate Registance Rg (Ω)
(Inductive
load)
Switching Characteristics (Typical) (6)
10
Switching Characteristics (Typical) (5)
1000
Swithing
Energy Losses E
(mJ)
Switching
Times
t (ns)
Eon
Eoff
t
f
td(off)
100
td(on)
tr
V
CC
= 600 V, V
GE
=
15
V
I
C
=
35 A, Rg
= 5
Ω
50
75
100
125
150
1
10
25
0.1
25
V
CC
= 600 V, V
GE
=
15
V
I
C
=
35 A, Rg
= 5
Ω
50
75
100
125
150
Case
Temperature Tc
(°C)
(Inductive
load)
Case
Temperature Tc
(°C)
(Inductive
load)
R07DS0748EJ0300 Rev.3.00
Feb 14, 2013
Page 5 of 9
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
