Target Specifications
Datasheet
RJF0611JPD
Silicon N Channel MOS FET Series
Power Switching
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
R07DS0581EJ0200
Rev.2.00
Apr 13, 2012
Features
Logic level operation (4 V Gate drive).
Built-in the over temperature shut-down circuit.
High endurance capability against to the short circuit.
Latch type shut down operation (need 0 voltage recovery).
Built-in the current limitation circuit.
Power supply voltage applies 12 V and 24 V.
AEC-Q101 Compliant
Outline
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
D
4
1. Gate
2. Drain
3. Source
4. Drain
G
Gate Resistor
Temperature
Sensing
Circuit
Latch
Circuit
Gate
Shut-down
Circuit
1
Current
Limitation
Circuit
2
3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
V
DSS
Gate to source voltage
V
GSS
Gate to source voltage
V
GSS
Drain current
I
D Note3
Body-drain diode reverse drain current
I
DR
Note 2
Avalanche current
I
AP
Avalanche energy
E
AR Note 2
Channel dissipation
Pch
Note 1
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Value at Tc = 25C
2. Tch = 25C, Rg
50
3. It provides by the current limitation lower bound value.
Ratings
60
16
–2.5
30
30
6.7
192
40
150
–55 to +150
Unit
V
V
V
A
A
A
mJ
W
C
C
R07DS0581EJ0200 Rev.2.00
Apr 13, 2012
Page 1 of 7
RJF0611JPD
Target Specifications
Typical Operation Characteristics
(Ta = 25°C)
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Drain current
(Current limitation value)
Note:
4. Pulse test
Symbol
V
IH
V
IL
I
IH1
I
IH2
I
IL
I
IH(sd)1
I
IH(sd)2
Tsd
Vop
I
D limt
Min
3.5
—
—
—
—
—
—
—
3.5
30
Typ
—
—
—
—
—
0.8
0.35
175
—
—
Max
—
1.2
100
50
1
—
—
—
12
—
Unit
V
V
A
A
A
mA
mA
C
V
A
Test Conditions
Vi = 8 V, V
DS
= 0
Vi = 3.5 V, V
DS
= 0
Vi = 1.2 V, V
DS
= 0
Vi = 8 V, V
DS
= 0
Vi = 3.5 V, V
DS
= 0
Channel temperature
V
GS
= 5 V, V
DS
= 10 V
Note 4
Electrical Characteristics
(Ta = 25°C)
Item
Drain current
Symbol
I
D1
I
D2
I
D3
V
(BR)DSS
V
(BR)GSS
V
(BR)GSS
I
GSS1
I
GSS2
I
GSS3
I
GSS4
I
GS(OP)1
I
GS(OP)2
I
DSS
V
GS(off)
|y
fs
|
R
DS(on)
R
DS(on)
Coss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
t
os1
t
os2
Min
—
—
30
60
16
–2.5
—
—
—
—
—
—
—
1.1
12
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
0.8
0.35
—
—
27
30
21
520
3.5
12.7
4
7.2
0.9
102
0.34
0.23
Max
45
10
—
—
—
—
100
50
1
–100
—
—
10
2.1
—
40
30
—
—
—
—
—
—
—
—
—
Unit
A
mA
A
V
V
V
A
A
A
A
mA
mA
A
V
S
m
m
pF
s
s
s
s
V
ns
ms
ms
Test Conditions
V
GS
= 3.5 V, V
DS
= 10 V
V
GS
= 1.2 V, V
DS
= 10 V
V
GS
= 5 V, V
DS
= 10 V
Note 5
I
D
= 10 mA, V
GS
= 0
I
G
= 800
A,
V
DS
= 0
I
G
= –100
A,
V
DS
= 0
V
GS
= 8 V, V
DS
= 0
V
GS
= 3.5 V, V
DS
= 0
V
GS
= 1.2 V, V
DS
= 0
V
GS
= –2.4 V, V
DS
= 0
V
GS
= 8 V, V
DS
= 0
V
GS
= 3.5 V, V
DS
= 0
V
DS
= 32 V, V
GS
= 0, Tc = 110C
V
DS
= 10 V, I
D
= 1 mA
I
D
= 15 A, V
DS
= 10 V
Note 5
I
D
= 15 A, V
GS
= 4 V
Note 5
I
D
= 15 A, V
GS
= 10 V
Note 5
V
DS
= 10 V, V
GS
= 0, f = 1MHz
V
GS
= 10 V, I
D
= 15 A, R
L
= 2
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Input current (shut down)
Zero gate voltage drain current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Output capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward
voltage
Body-drain diode reverse
recovery time
Over load shut down
Note 6
operation time
I
F
= 30 A, V
GS
= 0
I
F
= 30 A, V
GS
= 0
di
F
/dt = 50 A/s
V
GS
= 5 V, V
DD
= 16 V
V
GS
= 5 V, V
DD
= 24 V
Notes: 5. Pulse test
6. Including the junction temperature rise of the over loaded condition.
R07DS0581EJ0200 Rev.2.00
Apr 13, 2012
Page 2 of 7
RJF0611JPD
Target Specifications
Main Characteristics
Power vs. Temperature Derating
50
100
Thermal shut down
Operation area
Maximum Safe Operation Area
Pch (W)
40
I
D
(A)
10
DC Operation
(Tc = 25°C)
1 ms
Channel Dissipation
30
20
Drain Current
1
Operation in
this area is
limited by R
DS (on)
PW = 10 ms
10
0
0
50
100
150
200
0.1
0.01
0.1
1
10
100
Case Temperature
Tc (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
50
9V
8V
7V
4V
10 V
Typical Transfer Characteristics
30
V
DS
= 10 V
Pulse Test
I
D
(A)
40
I
D
(A)
20
Tc = –40°C
25°C
10
30
Drain Current
20
V
GS
= 3 V
10
Pulse Test
0
0
2
4
6
8
10
Drain Current
0
0
1
2
3
4
5
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(mV)
800
Pulse Test
700
600
500
400
300
10 A
200
5A
100
0
0
2
4
6
8
10
I
D
= 15 A
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
R
DS (on)
(mΩ)
1000
Pulse Test
100
V
GS
= 4 V
10 V
10
1
0.1
1
10
100
Gate to Source Voltage V
GS
(V)
Drain Current
I
D
(A)
R07DS0581EJ0200 Rev.2.00
Apr 13, 2012
Page 3 of 7
RJF0611JPD
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance |yfs| (S)
55
50
45
40
35
30 V
GS
= 4 V
25
20
15
10 V
10
–50 –25 0
Pulse Test
100
I
D
= 15 A
10 A
5A
10 A
5A
I
D
= 15 A
Target Specifications
Forward Transfer Admittance vs.
Drain Current
V
DS
= 10 V
Pulse Test
Tc = –40°C
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
25°C
10
1
150°C
25
50
75 100 125 150
0.1
0.1
1
10
100
Case Temperature
Tc (°C)
Drain Current I
D
(A)
Body-Drain Diode Reverse
Recovery Time
1000
100
Switching Characteristics
V
GS
= 10 V, V
DD
= 30 V
PW = 300
μs,
duty
≤
1 %
Reverse Recovery Time trr (ns)
100
Switching Time t (μs)
tr
10
tf
td(off)
td(on)
1
0.1
10
di / dt = 50 A /
μs
V
GS
= 0, Ta = 25°C
1
0.1
1
10
100
1
10
100
Reverse Drain Current
I
DR
(A)
Drain Current
I
D
(A)
Reverse Drain Current vs.
Source to Drain Voltage
30
10000
Pulse Test
25
3000
Typical Capacitance vs.
Drain to Source Voltage
Reverse Drain Current I
DR
(A)
Capacitance C (pF)
20
15
10
5
0
0
0.2
0.4
0.6
0.8
1.0
0V
V
GS
= 5 V
1000
300
100
30
10
0
10
20
30
40
50
60
Coss
V
GS
= 0
f = 1 MHz
Source to Drain Voltage V
SD
(V)
Drain to Source Voltage V
DS
(V)
R07DS0581EJ0200 Rev.2.00
Apr 13, 2012
Page 4 of 7
RJF0611JPD
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
Shutdown Case Temperature Tc (°C)
V
GS
(V)
16
14
12
10
8
6
4
2
0
10
100
1000
10000
24 V
V
DD
= 16 V
200
Target Specifications
Shutdown Case Temperature vs.
Gate to Source Voltage
180
Gate to Source Voltage
160
140
120
100
0
I
D
= 0.5 A
2
4
6
8
10
Shutdown Time of Load-Short Test
Pw (μS)
Gate to Source Voltage
V
GS
(V)
Normalized Transient Thermal Impedance
γ
s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
D=1
0.5
0.3
1
0.2
0.1
0.1
0.05
0.02
1
0.0
θch
- c(t) =
γs
(t)
• θch
- c
θch
- c = 3.125°C/W, Tc = 25°C
PDM
D=
PW
T
0.03
PW
T
1s
h
p
ot
uls
e
0.01
10
μ
100
μ
1m
10 m
100 m
1
10
Pulse Width PW (S)
R07DS0581EJ0200 Rev.2.00
Apr 13, 2012
Page 5 of 7
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