Target Specifications
Datasheet
RJF0610JSP
Silicon N Channel MOS FET Series
Power Switching
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
R07DS0568EJ0200
Rev.2.00
Apr 16, 2012
Features
Logic level operation (5 to 6 V Gate drive).
Built-in the over temperature shut-down circuit.
High endurance capability against to the short circuit.
Temperature hysteresis type.
High density mounting
Power supply voltage applies 12 V and 24 V.
AEC-Q101 Compliant
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
87
65
12
34
2
G
1, 3
2, 4
5, 6, 7, 8
Source
Gate
Drain
D
7
D
8
D
5
D
6
Gate Resistor
Temperature
Sensing
Circuit
Self
Return
Circuit
Current
Limitation
Circuit
Gate
Shut-down
Circuit
4
G
Gate Resistor
Temperature
Sensing
Circuit
Self
Return
Circuit
Current
Limitation
Circuit
Gate
Shut-down
Circuit
1
MOS1
S
MOS2
S
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Drain to source voltage
V
DSS
60
Gate to source voltage
V
GSS
16
Gate to source voltage
V
GSS
–2.5
Note4
Drain current
I
D
1.5
Body-drain diode reverse drain current
I
DR
1.5
Note 3
Avalanche current
I
AP
0.95
Note 3
Avalanche energy
E
AR
77.4
Note 1
Channel dissipation
Pch
2
Note 2
Channel dissipation
Pch
3
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. 1 Drive operation: When using the glass epoxy board (FR4 40
40
1.6 mm), PW
10 s
2. 2 Drive operation: When using the glass epoxy board (FR4 40
40
1.6 mm), PW
10 s
3. Tch = 25C, Rg
50
,
L = 100 mH
4. It provides by the current limitation lower bound value.
Unit
V
V
V
A
A
A
mJ
W
W
C
C
R07DS0568EJ0200 Rev.2.00
Apr 16, 2012
Page 1 of 7
RJF0610JSP
Target Specifications
Typical Operation Characteristics
(Ta = 25°C)
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Return temperature
Gate operation voltage
Drain current
(Current limitation value)
Notes; 5. Pulse test
Symbol
V
IH
V
IL
I
IH1
I
IH2
I
IL
I
IH(sd)1
I
IH(sd)2
I
IH(sd)3
Tsd
Thr
Vop
I
D limit
Min
3.5
—
—
—
—
—
—
—
—
—
3.5
1.5
Typ
—
—
—
—
—
0.4
0.24
0.16
175
120
—
—
Max
—
1.2
100
50
1
—
—
—
—
—
12
—
Unit
V
V
A
A
A
mA
mA
mA
C
C
V
A
Test Conditions
Vi = 5 V, V
DS
= 0
Vi = 3.5 V, V
DS
= 0
Vi = 1.2 V, V
DS
= 0
Vi = 8 V, V
DS
= 0
Vi = 5 V, V
DS
= 0
Vi = 3.5 V, V
DS
= 0
Channel temperature
Channel temperature
V
GS
= 5 V, V
DS
= 10 V
Note 5
Electrical Characteristics
(Ta = 25°C)
Item
Drain current
Symbol
I
D1
I
D2
I
D3
V
(BR)DSS
V
(BR)GSS
V
(BR)GSS
I
GSS1
I
GSS2
I
GSS3
I
GSS4
I
GS(OP)1
I
GS(OP)2
I
GS(OP)3
I
DSS1
I
DSS2
V
GS(off)
R
DS(on)
R
DS(on)
Coss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
t
os1
t
os2
Min
—
—
1.5
60
16
–2.5
—
—
—
—
—
—
—
—
—
1.4
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
0.4
0.24
0.16
—
—
—
207
153
267
4.3
18.3
0.62
0.61
0.8
55
18
5.7
Max
2.4
10
—
—
—
—
100
50
1
–100
—
—
—
10
10
2.5
285
214
—
—
—
—
—
—
—
—
—
Unit
A
mA
—
V
V
V
A
A
A
A
mA
mA
mA
A
A
V
m
m
pF
s
s
s
s
V
ns
ms
ms
Test Conditions
V
GS
= 3.5 V, V
DS
= 2 V
V
GS
= 1.2 V, V
DS
= 2 V
V
GS
= 5 V, V
DS
= 10 V
Note 6
I
D
= 10 mA, V
GS
= 0
I
G
= 500
A,
V
DS
= 0
I
G
= –100
A,
V
DS
= 0
V
GS
= 5 V, V
DS
= 0
V
GS
= 3.5 V, V
DS
= 0
V
GS
= 1.2 V, V
DS
= 0
V
GS
= –2.4 V, V
DS
= 0
V
GS
= 8 V, V
DS
= 0
V
GS
= 5 V, V
DS
= 0
V
GS
= 3.5 V, V
DS
= 0
V
DS
= 60 V, V
GS
= 0
V
DS
= 48 V, V
GS
= 0,
Ta = 125C
I
D
= 1 mA, V
DS
= 10 V
I
D
= 0.7 A, V
GS
= 5 V
Note 6
I
D
= 0.7 A, V
GS
= 10 V
Note 6
V
DS
= 10 V, V
GS
= 0, f = 1MHz
I
D
= 0.7 A, V
GS
= 5 V, R
L
= 43
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Input current (shut down)
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Output capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery
time
Over load shut down
Note 7
operation time
I
F
= 1.5 A, V
GS
= 0
I
F
= 1.5 A, V
GS
= 0
di
F
/dt = 50 A/s
V
GS
= 5 V, V
DD
= 16 V
V
GS
= 5 V, V
DD
= 24 V
Notes: 6. Pulse test
7. Including the junction temperature rise of the over loaded condition.
R07DS0568EJ0200 Rev.2.00
Apr 16, 2012
Page 2 of 7
RJF0610JSP
Target Specifications
Main Characteristics
Power vs. Temperature Derating
4.0
100
Test Condition:
When using the glass epoxy board
(FR4 40
×
40
×
1.6 mm), PW
<
10 s
Maximum Safe Operation Area
Ta = 25°C
1 shot pulse
1 Drive Operation
Pch (W)
3.0
I
D
(A)
10
Thermal shut down
Operation area
1
Channel Dissipation
1
Drain Current
DC
PW
m
s
=
2.0
1
Dr
ive
Op
10
2
er
m
1.0
Op
iv
Dr
0.1
Operation in
this area is
limited by R
DS (on)
at
s
ion
er
e
(P
at
a
er
Op
n
tio
W
≤
10
No
te
ion
0.01
0.001
0.01
s)
7
0
0
50
100
150
200
0.1
1
10
100
Ambient Temperature Ta (°C)
Drain to Source Voltage V
DS
(V)
Note 7:
When using the glass epoxy board
(FR4 40
×
40
×
1.6 mm)
Typical Output Characteristics
5
8, 10 V
6V
5V
3
Pulse Test
1.5
Typical Transfer Characteristics
Tc = –40°C
25°C
75°C
I
D
(A)
I
D
(A)
4V
3.5 V
4
1.0
Drain Current
2
Drain Current
0.5
1
0
0
2
4
6
V
GS
= 0 V
8
10
V
DS
= 10 V
Pulse Test
0
0
1
2
3
4
5
6
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(mV)
600
Pulse Test
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
R
DS (on)
(mΩ)
10000
400
1000
V
GS
= 5 V
100
10 V
200
I
D
= 1 A
0.7 A
0.2 A
Pulse Test
10
0.1 0.2
0.5
1
2
5
10
20
0
0
2
4
6
8
10
Gate to Source Voltage V
GS
(V)
Drain Current
I
D
(A)
R07DS0568EJ0200 Rev.2.00
Apr 16, 2012
Page 3 of 7
RJF0610JSP
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
Target Specifications
Body-Drain Diode Reverse
Recovery Time
Reverse Recovery Time trr (ns)
1000
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
400
300
I
D
= 0.2, 0.7, 1 A
100
200
V
GS
= 5 V
10
di / dt = 50 A /
μs
V
GS
= 0, Ta = 25°C
1
0.1
1
10
I
D
= 0.2, 0.7, 1 A
10 V
100
–50 –25
0
25
50
75 100 125 150
Case Temperature
Tc (°C)
Reverse Drain Current
I
DR
(A)
Switching Characteristics
100
Reverse Drain Current vs.
Source to Drain Voltage
1.5
tr
10
td(on)
Reverse Drain Current I
DR
(A)
V
GS
= 5 V, V
DD
= 30 V
PW = 300
μs,
duty
≤
1 %
Pulse Test
Switching Time t (μs)
V
GS
= 5 V
1
1
tf
td(off)
0.5
0.1
0.1
0
1
10
0
0.2
0.4
0.6
0.8
2.0
Drain Current
I
D
(A)
Source to Drain Voltage V
SD
(V)
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
V
GS
(V)
Gate to Source Voltage
12
10
8
6
4
2
0
1
10
100
24 V
10000
Capacitance C (pF)
1000
V
DD
= 16 V
100
10
0
10
20
30
40
50
60
Drain to Source Voltage V
DS
(V)
Shutdown Time of Load-Short Test PW (mS)
R07DS0568EJ0200 Rev.2.00
Apr 16, 2012
Page 4 of 7
RJF0610JSP
Shutdown Case Temperature vs.
Gate to Source Voltage
Target Specifications
Shutdown Case Temperature Tc (°C)
200
180
160
140
120
I
D
= 0.2 A
100
0
2
4
6
8
10
Gate to Source Voltage
V
GS
(V)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
Normalized Transient Thermal Impedance
γ
s (t)
10
1
D=1
0.5
0.1
0.2
0.1
0.05
0.01
0.02
0.01
θch
– f (t) =
γ
s (t) •
θch
– f
θch
– f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40
×
40
×
1.6 mm)
0.001
1s
ho
t
lse
pu
P
DM
PW
T
1m
10 m
100 m
1
10
100
D=
PW
T
0.0001
10
μ
100
μ
1000
10000
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
Normalized Transient Thermal Impedance
γ
s (t)
10
1
D=1
0.5
0.1
0.2
0.1
0.05
0.01
θch
– f (t) =
γ
s (t) •
θch
– f
θch
– f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40
×
40
×
1.6 mm)
0.02
0.01
0.001
1s
ho
t
lse
pu
P
DM
PW
T
1m
10 m
100 m
1
10
100
D=
PW
T
0.0001
10
μ
100
μ
1000
10000
Pulse Width PW (S)
R07DS0568EJ0200 Rev.2.00
Apr 16, 2012
Page 5 of 7
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