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RJF0604JPD: 产品描述Silicon N Channel MOS FET Series Power Switching; 文件大小52KB，共4页; 制造商Renesas(瑞萨电子); 官网地址https://www.renesas.com/

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RJF0604JPD概述

Silicon N Channel MOS FET Series Power Switching

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Target Specifications

Datasheet

RJF0604JPD

Silicon N Channel MOS FET Series

Power Switching

Description

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in

over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of

high junction temperature like applying over power consumption, over current etc..

R07DS0583EJ0100

Rev.1.00

Nov 22, 2011

Features



Logic level operation (5 V Gate drive).

Built-in the over temperature shut-down circuit.

High endurance capability against to the short circuit.

Latch type shut down operation (need 0 voltage recovery).

Built-in the current limitation circuit.

Power supply voltage applies 12 V and 24 V.

AEC-Q101 Compliant

Outline

RENESAS Package code: PRSS0004ZD-C

(Package name: DPAK (S) )

1. Gate

2. Drain

3. Source

4. Drain

Gate Resistor

Temperature

Sensing

Circuit

Latch

Circuit

Gate

Shut-down

Circuit

Current

Limitation

Circuit

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Drain to source voltage

DSS

Gate to source voltage

GSS

Gate to source voltage

GSS

Drain current

D Note3

Body-drain diode reverse drain current

Note 2

Avalanche current

Avalanche energy

AR Note 2

Channel dissipation

Pch

Note 1

Channel temperature

Tch

Storage temperature

Tstg

Notes: 1. Value at Tc = 25C

2. Tch = 25C, Rg





3. It provides by the current limitation lower bound value.

Ratings

–2.5

(4.7)

(94.7)

150

–55 to +150

Unit

C

R07DS0583EJ0100 Rev.1.00

Nov 22, 2011

Page 1 of 3

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RJF0604JPD

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