VISHAY
RG4A to RG4J
Vishay Semiconductors
Fast Sinterglass Diode
\
Features
• High temperature metallurgically bonded con-
struction
• Cavity-free glass passivated junction
• Fast switching for high efficiency
• 3.0 ampere operation at T
amb
= 50 °C with no ther-
mal runaway
• Hermetically sealed package
Mechanical Data
Case:
Sintered glass case, G4
Terminals:
Solder plated axial leads, solderable per
MIL-STD-750, Method 2026
Mounting Position:
Any
Weight:
1040 mg
17133
Parts Table
Part
RG4A
RG4B
RG4D
RG4G
RG4J
V
RRM
= 50 V
V
RRM
= 100 V
V
RRM
= 200 V
V
RRM
= 400 V
V
RRM
= 600 V
Type differentiation
G4
G4
G4
G4
G4
Package
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage = Repetitive peak reverse
voltage
Test condition
see electrical characteristics
see electrical characteristics
see electrical characteristics
see electrical characteristics
see electrical characteristics
Maximum average forward rectified current
Peak forward surge current
Maximum average reverse current
Operating junction and storage temperature
range
0.375 " (9.5 mm) lead length at T
amb
= 55 °C
8.3 ms single half sine-wave superimposed
on rated load (JEDEC Method)
at rated peak reverse voltage T
amb
= 25 °C
at rated peak reverse voltage T
amb
= 100 °C
Part
RG4A
RG4B
RG4D
RG4J
RG1J
Symbol
V
R
=
V
RRM
V
R
=
V
RRM
V
R
=
V
RRM
V
R
=
V
RRM
V
R
=
V
RRM
I
F(AV)
I
FSM
I
R(AV)
I
R(AV)
T
J
,
T
STG
Value
50
100
200
400
600
3.0
100
2.0
100
- 55 to +
175
Unit
V
V
V
V
V
A
A
µA
µA
°C
Document Number 86076
Rev. 2, 28-Jan-03
www.vishay.com
1
RG4A to RG4J
Vishay Semiconductors
VISHAY
Maximum Thermal Resistance
T
amb
= 25 °C, unless otherwise specified
Parameter
Typical thermal resistance
1)
1)
Symbol
R
θJA
Value
22
Unit
K/W
Thermal resistance from junction to ambient at 0.375 " (9.5 mm) lead length, with both leads attached to heat sink
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Maximum instantaneous forward
voltage
Maximum reverse current
Maximum reverse recovery time
I
F
= 3.0 A
V
R
= V
RRM
I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
Typical junction capacitance
V
R
= 4.0 V, f = 1 MHz
RG4A
RG4B
RG4D
RG4G
RG4J
Test condition
Part
Symbol
V
F
I
R
t
rr
t
rr
t
rr
t
rr
t
rr
C
J
50
Typ.
Max
1.3
5.0
150
150
150
150
250
Unit
V
µA
ns
ns
ns
ns
ns
pF
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
Average Forward Rectified Current (A)
4.0
Resistive or Inductive Load
200
T
A
= 55°C
8.3ms Single Half Sine-Wave
(JEDEC Method)
100
3.0
2.0
1.0
0.375" (9.5mm) Lead Length
0
0
25
50
75
100
125
150
175
grg4a_02
Peak Forward Surge Current (A)
10
1
10
100
grg4a_01
Ambient Temperature (°C)
Number of Cycles at 60 H
Z
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
2
Document Number 86076
Rev. 2, 28-Jan-03
VISHAY
RG4A to RG4J
Vishay Semiconductors
20
Instantaneous Forward Current (A)
10
1
T
J
= 25°C
Pulse Width = 300µs
1% Duty Cycle
0.1
0.01
0.4
grg4a_03
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
10
Instantaneous Reverse Current (µA)
T
J
= 125°C
1
T
J
= 75°C
0.1
T
J
= 25°C
0.01
0
20
40
60
80
100
grg4a_04
Percent of Rated Peak Reverse Voltage (V)
Figure 4. Typical Reverse Characteristics
100
T
J
= 25°C
f = 1.0 MH
Z
Vsig, 50mVp-p
50
Junction Capacitance (pF)
10
1
grg4a_05
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
Document Number 86076
Rev. 2, 28-Jan-03
www.vishay.com
3
RG4A to RG4J
Vishay Semiconductors
Package Dimensions in Inches (mm)
VISHAY
0.180 (4.6)
0.115 (2.9)
DIA.
1.0 (25.4)
MIN.
0.300 (7.6)
MAX.
0.042 (1.07)
0.038 (0.962)
DIA.
17032
1.0 (25.4)
MIN.
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4
Document Number 86076
Rev. 2, 28-Jan-03
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
RG4A to RG4J
Vishay Semiconductors
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 86076
Rev. 2, 28-Jan-03
www.vishay.com
5
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