NVD5890N
Power MOSFET
Features
40 V, 123 A, Single N−Channel DPAK
•
•
•
•
•
Low R
DS(on)
to Minimize Conduction Losses
MSL 1/260°C
AEC Q101 Qualified and PPAP Capable
100% Avalanche Tested
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
V
(BR)DSS
40 V
R
DS(on)
3.7 mW @ 10 V
I
D
123 A
Applications
•
Motor Drivers
•
Pump Drivers for Automotive Braking, Steering and Other High
Current Systems
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent (R
qJC
)
Power Dissipation
(R
qJC
)
Continuous Drain Cur-
rent (R
qJA
) (Note 1)
Power Dissipation
(R
qJA
) (Note 1)
Pulsed Drain Current
t
p
=10ms
Current Limited by Package
T
C
= 25°C
T
C
= 85°C
T
C
= 25°C
Steady
State
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 25°C
P
D
I
DM
I
DmaxPkg
T
J
, T
stg
I
S
dV/dt
E
AS
P
D
I
D
Symbol
V
DSS
V
GS
I
D
Value
40
"20
123
95
107
24
18.5
4.0
400
100
−55
to
175
100
6.0
240
W
A
A
°C
A
V/ns
mJ
W
A
Unit
V
V
A
G
D
N−Channel
S
4
1 2
3
CASE 369C
DPAK
(Bent Lead)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
YWW
58
90NG
2
Drain 3
1
Gate Source
Y
WW
5890N
G
= Year
= Work Week
= Device Code
= Pb−Free Package
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche En-
ergy (V
DD
= 32 V, V
GS
= 10 V,
L = 0.3 mH, I
L(pk)
= 40 A, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
©
Semiconductor Components Industries, LLC, 2012
January, 2012
−
Rev. 1
1
Publication Order Number:
NVD5890N/D
NVD5890N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient
−
Steady State (Note 1)
Junction−to−Ambient
−
Steady State (Note 2)
1. Surface−mounted on FR4 board using
2. Surface−mounted on FR4 board using
650 mm
2
pad size,
36 mm
2
pad size.
2 oz Cu.
Symbol
R
qJC
R
qJA
R
qJA
Value
1.4
37
76
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
gFS
V
GS
= 10 V, I
D
= 50 A
V
DS
= 15 V, I
D
= 15 A
V
GS
= 0 V,
V
DS
= 40 V
T
J
= 25°C
T
J
= 150°C
V
GS
= 0 V, I
D
= 250
mA
40
40
1.0
100
"100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
V
DS
= 0 V, V
GS
=
"20
V
V
GS
= V
DS
, I
D
= 250
mA
1.5
7.4
2.9
16.8
3.5
V
mV/°C
3.7
mW
S
C
iss
C
oss
C
rss
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 10 V, V
DS
= 20 V,
I
D
= 50 A, R
G
= 2.0
W
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 50 A
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 12 V
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 25 V
4975
785
490
4760
580
385
74
5.0
17
16
100
pF
pF
nC
14
55
35
7.0
ns
3. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
NVD5890N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 50 A
V
GS
= 0 V,
I
S
= 20 A
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t
RR
ta
tb
Q
RR
V
GS
= 0 V, dIs/dt = 100 A/ms,
I
S
= 50 A
T
J
= 25°C
T
J
= 25°C
0.9
0.8
35
20
15
40
nC
1.2
1.0
ns
V
Symbol
Test Condition
Min
Typ
Max
Unit
http://onsemi.com
3
NVD5890N
TYPICAL PERFORMANCE CURVES
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
10 V
7V
6V
T
J
= 25°C
V
GS
= 5 V
I
D
, DRAIN CURRENT (A)
V
DS
≥
10 V
I
D
, DRAIN CURRENT (A)
4.5 V
4.2 V
4V
3.8 V
3.6 V
0
1
2
3
4
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
5
T
J
= 25°C
T
J
= 150°C
T
J
=
−55°C
2
3
4
5
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
6
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
Figure 2. Transfer Characteristics
20
18
16
14
12
10
8
6
4
2
0
3
4
5
6
7
8
I
D
= 50 A
T
J
= 25°C
20
18
16
14
12
10
8
6
4
2
0
0
40
80
120
160
200
240
280
V
GS
= 10 V
V
GS
= 5 V
T
J
= 25°C
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Drain Current
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1000
R
DS(on)
, NORMALIZED DRAIN−TO−SOURCE
RESISTANCE (mW)
2.0
V
GS
= 10 V
I
D
= 50 A
I
DSS
, LEAKAGE (mA)
V
GS
= 0 V
1.75
1.5
100
T
J
= 175°C
1.25
1.0
10
T
J
= 150°C
0.75
0.5
−50
1
−25
0
25
50
75
100
125
150
175
0
4
8
12
16
20
24
28
32
36
40
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
4
NVD5890N
TYPICAL PERFORMANCE CURVES
7000
6000
C, CAPACITANCE (pF)
5000
4000
3000
2000
1000
0
C
rss
0
5
10
15
20
25
30
35
40
C
oss
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
20
Q
T
V
DS
V
GS
10
Q
GS
Q
DS
V
DS
= 15 V
I
D
= 50 A
T
J
= 25°C
10
20
30
40
50
60
70
5
C
iss
15
0
80
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
V
GS
= 10 V
V
DD
= 20 V
I
D
= 50 A
t, TIME (ns)
100
t
d(off)
t
f
t
r
t
d(on)
I
S
, SOURCE CURRENT (A)
100
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
T
J
= 150°C
10
1
100°C
25°C
T
J
=
−55°C
1
1
10
R
G
, GATE RESISTANCE (W)
100
0.1
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
I D, DRAIN CURRENT (AMPS)
Figure 10. Diode Forward Voltage vs. Current
100
10
ms
100
ms
10
V
GS
≤
20 V
SINGLE PULSE
T
C
= 25°C
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
1 ms
10 ms
dc
100
1
0.1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
http://onsemi.com
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
工业自动化与控制
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
