DISCRETE SEMICONDUCTORS
DATA SHEET
PEMH1; PUMH1
NPN/NPN resistor-equipped
transistors; R1 = 22 kΩ, R2 = 22 kΩ
Product data sheet
Supersedes data of 2001 Oct 22
2003 Oct 08
NXP Semiconductors
Product data sheet
NPN/NPN resistor-equipped transistors;
R1 = 22 kΩ, R2 = 22 kΩ
FEATURES
•
Built-in bias resistors
•
Simplified circuit design
•
Reduction of component count
•
Reduced pick and place costs.
APPLICATIONS
•
Low current peripheral driver
•
Replacement of general purpose transistors in digital
applications
•
Control of IC inputs.
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
O
TR1
TR2
R1
R2
PEMH1; PUMH1
PARAMETER
collector-emitter
voltage
output current (DC)
NPN
NPN
bias resistor
bias resistor
TYP.
−
−
−
−
22
22
MAX.
50
100
−
−
−
−
UNIT
V
mA
−
−
kΩ
kΩ
DESCRIPTION
NPN/NPN resistor-equipped transistors (see “Simplified
outline, symbol and pinning” for package details).
PRODUCT OVERVIEW
TYPE
NUMBER
PEMH1
PUMH1
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PINNING
TYPE NUMBER
PEMH1
PUMH1
handbook, halfpage
6
PACKAGE
MARKING CODE
PHILIPS
SOT666
SOT363
SC-88
EIAJ
H2
H*2
(1)
NPN/PNP
COMPLEMENT
PEMD2
PUMD2
PNP/PNP
COMPLEMENT
PEMB1
PUMB1
SIMPLIFIED OUTLINE AND SYMBOL
PIN
5
4
6
5
4
DESCRIPTION
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
1
2
3
R1
TR1
R2
R2
TR2
R1
4
5
6
1
Top view
2
3
1
MHC650
2
3
2003 Oct 08
2
NXP Semiconductors
Product data sheet
NPN/NPN resistor-equipped transistors;
R1 = 22 kΩ, R2 = 22 kΩ
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PEMH1
PUMH1
−
−
DESCRIPTION
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
PEMH1; PUMH1
VERSION
SOT666
SOT363
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
V
I
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
I
O
I
CM
P
tot
output current (DC)
peak collector current
total power dissipation
SOT363
SOT666
T
stg
T
j
T
amb
Per device
P
tot
total power dissipation
SOT363
SOT666
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
T
amb
≤
25
°C
note 1
notes 1 and 2
−
−
300
300
mW
mW
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
note 1
notes 1 and 2
−
−
−65
−
−65
200
200
+150
150
+150
mW
mW
°C
°C
°C
−
−
−
−
+40
−10
100
100
V
V
mA
mA
CONDITIONS
open emitter
open base
open collector
−
−
−
MIN.
MAX.
50
50
10
V
V
V
UNIT
2003 Oct 08
3
NXP Semiconductors
Product data sheet
NPN/NPN resistor-equipped transistors;
R1 = 22 kΩ, R2 = 22 kΩ
THERMAL CHARACTERISTICS
SYMBOL
Per transistor
R
th j-a
thermal resistance from junction to ambient
SOT363
SOT666
Per device
R
th j-a
thermal resistance from junction to ambient
SOT363
SOT666
Notes
T
amb
≤
25
°C
note 1
notes 1 and 2
T
amb
≤
25
°C
note 1
notes 1 and 2
PARAMETER
CONDITIONS
PEMH1; PUMH1
VALUE
UNIT
625
625
K/W
K/W
416
416
K/W
K/W
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R1
R2
-------
-
R1
C
c
PARAMETER
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
CONDITIONS
V
CB
= 50 V; I
E
= 0
V
CE
= 30 V; I
B
= 0
V
CE
= 30 V; I
B
= 0; T
j
= 150
°C
V
EB
= 5 V; I
C
= 0
V
CE
= 5 V; I
C
= 5 mA
I
C
= 100
μA;
V
CE
= 5 V
I
C
= 5 mA; V
CE
= 0.3 V
MIN.
−
−
−
−
60
−
−
2.5
15.4
0.8
TYP.
−
−
−
−
−
−
1.1
1.7
22
1
MAX.
100
1
50
180
−
150
0.8
−
28.6
1.2
2.5
pF
mV
V
V
kΩ
UNIT
nA
μA
μA
μA
collector-emitter saturation voltage I
C
= 10 mA; I
B
= 0.5 mA
2003 Oct 08
4
NXP Semiconductors
Product data sheet
NPN/NPN resistor-equipped transistors;
R1 = 22 kΩ, R2 = 22 kΩ
PACKAGE OUTLINES
PEMH1; PUMH1
Plastic surface mounted package; 6 leads
SOT666
D
A
E
X
S
Y S
HE
6
5
4
pin 1 index
A
1
e1
e
2
bp
3
w
M
A
Lp
detail X
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
0.6
0.5
b
p
0.27
0.17
c
0.18
0.08
D
1.7
1.5
E
1.3
1.1
e
1.0
e
1
0.5
H
E
1.7
1.5
L
p
0.3
0.1
w
0.1
y
0.1
OUTLINE
VERSION
SOT666
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
01-01-04
01-08-27
2003 Oct 08
5
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