PEMD48; PUMD48
NPN/PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 47 kΩ and R1 = 2.2 kΩ, R2 = 47 kΩ
Rev. 05 — 13 April 2010
Product data sheet
1. Product profile
1.1 General description
NPN/PNP double Resistor-Equipped Transistors (RET) in small Surface-Mounted
Device (SMD) plastic packages.
Table 1.
Product overview
Package
NXP
PEMD48
PUMD48
SOT666
SOT363
JEITA
-
SC-88
Package
configuration
ultra small and flat lead
very small
Type number
1.2 Features and benefits
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
1.3 Applications
Low current peripheral driver
Replacement of general-purpose transistors in digital applications
Control IC inputs
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
O
R1
R2/R1
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current
bias resistor 1 (input)
bias resistor ratio
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min
-
-
33
0.8
1.54
17
Typ
-
-
47
1
2.2
21
Max
50
100
61
1.2
2.86
26
kΩ
Unit
V
mA
kΩ
Per transistor; for the PNP transistor with negative polarity
Transistor TR1 (NPN)
Transistor TR2 (PNP)
NXP Semiconductors
PEMD48; PUMD48
NPN/PNP resistor-equipped transistors
2. Pinning information
Table 3.
Pin
1
2
3
4
5
6
Pinning
Description
GND (emitter) TR1
input (base) TR1
output (collector) TR2
GND (emitter) TR2
input (base) TR2
output (collector) TR1
1
2
3
TR1
R2
R1
R1
R2
TR2
Simplified outline
Graphic symbol
PEMD48 (SOT666)
6
5
4
6
5
4
1
2
3
006aaa143
PUMD48 (SOT363)
1
2
3
4
5
6
GND (emitter) TR1
input (base) TR1
output (collector) TR2
GND (emitter) TR2
input (base) TR2
output (collector) TR1
1
2
3
TR1
R2
R1
R1
R2
TR2
6
5
4
6
5
4
1
2
3
006aaa143
3. Ordering information
Table 4.
Ordering information
Package
Name
PEMD48
PUMD48
-
SC-88
Description
plastic surface-mounted package; 6 leads
plastic surface-mounted package; 6 leads
Version
SOT666
SOT363
Type number
4. Marking
Table 5.
PEMD48
PUMD48
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PEMD48_PUMD48_5
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Marking codes
Marking code
[1]
48
4*8
Type number
Product data sheet
Rev. 05 — 13 April 2010
2 of 12
NXP Semiconductors
PEMD48; PUMD48
NPN/PNP resistor-equipped transistors
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
V
I
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage TR1
positive
negative
input voltage TR2
positive
negative
I
O
I
CM
P
tot
output current
peak collector current
total power dissipation
PEMD48 (SOT666)
PUMD48 (SOT363)
Per device
P
tot
total power dissipation
PEMD48 (SOT666)
PUMD48 (SOT363)
T
j
T
amb
T
stg
[1]
[2]
Conditions
open emitter
open base
open collector
Min
-
-
-
-
-
-
-
-
-
Max
50
50
10
+40
−10
+5
−12
100
100
200
200
Unit
V
V
V
V
V
V
V
mA
mA
mW
mW
Per transistor; for the PNP transistor with negative polarity
T
amb
≤
25
°C
[1][2]
[1]
-
-
T
amb
≤
25
°C
[1][2]
[1]
-
-
-
−65
−65
300
300
150
+150
+150
mW
mW
°C
°C
°C
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Reflow soldering is the only recommended soldering method.
PEMD48_PUMD48_5
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 05 — 13 April 2010
3 of 12
NXP Semiconductors
PEMD48; PUMD48
NPN/PNP resistor-equipped transistors
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
PEMD48 (SOT666)
PUMD48 (SOT363)
Per device
R
th(j-a)
thermal resistance from
junction to ambient
PEMD48 (SOT666)
PUMD48 (SOT363)
[1]
[2]
Conditions
T
amb
≤
25
°C
[1][2]
[1]
Min
Typ
Max
Unit
Per transistor
-
-
-
-
625
625
K/W
K/W
T
amb
≤
25
°C
[1][2]
[1]
-
-
-
-
416
416
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
PEMD48_PUMD48_5
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 05 — 13 April 2010
4 of 12
NXP Semiconductors
PEMD48; PUMD48
NPN/PNP resistor-equipped transistors
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
I
CBO
I
CEO
Parameter
collector-base
cut-off current
collector-emitter
cut-off current
Conditions
V
CB
= 50 V;
I
E
= 0 A
V
CE
= 30 V;
I
B
= 0 A
V
CE
= 30 V;
I
B
= 0 A;
T
j
= 150
°C
Transistor TR1 (NPN)
I
EBO
h
FE
V
CEsat
V
I(off)
V
I(on)
R1
R2/R1
C
c
emitter-base
cut-off current
DC current gain
collector-emitter
saturation voltage
off-state input voltage
on-state input voltage
bias resistor 1 (input)
bias resistor ratio
collector capacitance
V
CB
= 10 V;
I
E
= i
e
= 0 A;
f = 1 MHz
V
EB
=
−5
V;
I
C
= 0 A
V
CE
=
−5
V;
I
C
=
−10
mA
I
C
=
−5
mA;
I
B
=
−0.25
mA
V
CE
=
−5
V;
I
C
=
−100 μA
V
CE
=
−0.3
V;
I
C
=
−5
mA
V
EB
= 5 V;
I
C
= 0 A
V
CE
= 5 V;
I
C
= 5 mA
I
C
= 10 mA;
I
B
= 0.5 mA
V
CE
= 5 V;
I
C
= 100
μA
V
CE
= 0.3 V;
I
C
= 2 mA
-
80
-
-
3
33
0.8
-
-
-
-
1.2
1.6
47
1
-
90
-
150
0.8
-
61
1.2
2.5
pF
mV
V
V
kΩ
μA
Min
-
-
-
Typ
-
-
-
Max
100
1
50
Unit
nA
μA
μA
Per transistor; for the PNP transistor with negative polarity
Transistor TR2 (PNP)
I
EBO
h
FE
V
CEsat
V
I(off)
V
I(on)
R1
R2/R1
C
c
emitter-base
cut-off current
DC current gain
collector-emitter
saturation voltage
off-state input voltage
on-state input voltage
bias resistor 1 (input)
bias resistor ratio
collector capacitance
V
CB
=
−10
V;
I
E
= i
e
= 0 A;
f = 1 MHz
-
100
-
-
−1.1
1.54
17
-
-
-
-
−0.6
−0.75
2.2
21
-
−180
-
−100
−0.5
-
2.86
26
3
pF
mV
V
V
kΩ
μA
PEMD48_PUMD48_5
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 05 — 13 April 2010
5 of 12
NXP MCU
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