DISCRETE SEMICONDUCTORS
DATA SHEET
PEMD12; PUMD12
NPN/PNP resistor-equipped
transistors; R1 = 47 kΩ, R2 = 47 kΩ
Product data sheet
Supersedes data of 2001 Nov 7
2003 Oct 08
NXP Semiconductors
Product data sheet
NPN/PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 47 kΩ
FEATURES
•
Built-in bias resistors
•
Simplified circuit design
•
Reduction of component count
•
Reduced pick and place costs.
APPLICATIONS
•
Low current peripheral driver
•
Replacement of general purpose transistors in digital
applications
•
Control of IC inputs.
PEMD12; PUMD12
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
O
TR1
TR2
R1
R2
PARAMETER
collector-emitter
voltage
output current (DC)
NPN
PNP
bias resistor
bias resistor
TYP.
−
−
−
−
47
47
MAX.
50
100
−
−
−
−
UNIT
V
mA
−
−
kΩ
kΩ
DESCRIPTION
NPN/PNP resistor-equipped transistors (see “Simplified
outline, symbol and pinning” for package details).
PRODUCT OVERVIEW
TYPE
NUMBER
PEMD12
PUMD12
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PINNING
TYPE NUMBER
PEMD12
PUMD12
6
5
4
R1
TR1
R2
1
Top view
2
3
1
2
3
MAM468
PACKAGE
MARKING CODE
PHILIPS
SOT666
SOT363
SC-88
EIAJ
D2
D*1
(1)
PNP/PNP
COMPLEMENT
PEMB2
PUMB2
NPN/NPN
COMPLEMENT
PEMH2
PUMH2
SIMPLIFIED OUTLINE AND SYMBOL
PIN
6
5
4
DESCRIPTION
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
1
2
3
R2
TR2
R1
4
5
6
2003 Oct 08
2
NXP Semiconductors
Product data sheet
NPN/PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 47 kΩ
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PEMD12
PUMD12
−
−
DESCRIPTION
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
PEMD12; PUMD12
VERSION
SOT666
SOT363
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
−
−
−
−
−
−
−
−
−
T
amb
≤
25
°C
note 1
notes 1 and 2
−
−
−65
−
−65
T
amb
≤
25
°C
note 1
notes 1 and 2
−
−
300
300
mW
mW
200
200
+150
150
+150
mW
mW
°C
°C
°C
MIN.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
V
CBO
V
CEO
V
EBO
V
I
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage TR1
positive
negative
V
I
input voltage TR2
positive
negative
I
O
I
CM
P
tot
output current (DC)
peak collector current
total power dissipation
SOT363
SOT666
T
stg
T
j
T
amb
Per device
P
tot
total power dissipation
SOT363
SOT666
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
storage temperature
junction temperature
operating ambient temperature
+10
−40
100
100
V
V
mA
mA
+40
−10
V
V
open emitter
open base
open collector
50
50
10
V
V
V
2003 Oct 08
3
NXP Semiconductors
Product data sheet
NPN/PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 47 kΩ
THERMAL CHARACTERISTICS
SYMBOL
Per transistor
R
th j-a
thermal resistance from junction to ambient
SOT363
SOT666
Per device
R
th j-a
thermal resistance from junction to ambient
SOT363
SOT666
Notes
T
amb
≤
25
°C
note 1
notes 1 and 2
T
amb
≤
25
°C
note 1
notes 1 and 2
PARAMETER
CONDITIONS
PEMD12; PUMD12
VALUE
UNIT
625
625
K/W
K/W
416
416
K/W
K/W
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
−
−
−
80
−
−
3
33
0.8
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
−
−
−
−
2.5
3
pF
pF
TYP.
−
−
−
−
−
−
1.2
1.6
47
1
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R1
R2
-------
-
R1
C
c
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
TR1 (NPN)
TR2 (PNP)
V
CB
= 50 V; I
E
= 0
V
CE
= 30 V; I
B
= 0
V
CE
= 30 V; I
B
= 0; T
j
= 150
°C
V
EB
= 5 V; I
C
= 0
V
CE
= 5 V; I
C
= 5 mA
I
C
= 100
μA;
V
CE
= 5 V
I
C
= 2 mA; V
CE
= 0.3 V
100
1
50
90
−
150
0.8
−
61
1.2
mV
V
V
kΩ
nA
μA
μA
μA
collector-emitter saturation voltage I
C
= 10 mA; I
B
= 0.5 mA
2003 Oct 08
4
NXP Semiconductors
Product data sheet
NPN/PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 47 kΩ
PACKAGE OUTLINES
PEMD12; PUMD12
Plastic surface mounted package; 6 leads
SOT666
D
A
E
X
S
Y S
HE
6
5
4
pin 1 index
A
1
e1
e
2
bp
3
w
M
A
Lp
detail X
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
0.6
0.5
b
p
0.27
0.17
c
0.18
0.08
D
1.7
1.5
E
1.3
1.1
e
1.0
e
1
0.5
H
E
1.7
1.5
L
p
0.3
0.1
w
0.1
y
0.1
OUTLINE
VERSION
SOT666
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
01-01-04
01-08-27
2003 Oct 08
5
DSP 与 ARM 处理器
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
