PTVSxP1UP series
600 W Transient Voltage Suppressor
Rev. 2 — 6 January 2011
Product data sheet
1. Product profile
1.1 General description
600 W unidirectional Transient Voltage Suppressor (TVS) in a SOD128 small and flat lead
Surface-Mounted Device (SMD) plastic package, designed for transient overvoltage
protection.
1.2 Features and benefits
Rated peak pulse power: P
PPM
= 600 W
Reverse standoff voltage range:
V
RWM
= 3.3 V to 64 V
Reverse current: I
RM
= 0.001
μA
Very low package height: 1 mm
Small plastic package suitable for
surface-mounted design
AEC-Q101 qualified
1.3 Applications
Power supply protection
Automotive application
Industrial application
Power management
1.4 Quick reference data
Table 1.
Symbol
P
PPM
V
RWM
[1]
Quick reference data
Parameter
rated peak pulse power
reverse standoff voltage
Conditions
[1]
Min
-
3.3
Typ
-
-
Max
600
64
Unit
W
V
In accordance with IEC 61643-321 (10/1000
μs
current waveform).
NXP Semiconductors
PTVSxP1UP series
600 W Transient Voltage Suppressor
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Graphic symbol
1
2
sym035
1
2
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Package
Name
PTVSxP1UP series
[1]
Type number
[1]
Description
plastic surface-mounted package; 2 leads
Version
SOD128
-
The series consists of 35 types with reverse standoff voltages from 3.3 V to 64 V.
4. Marking
Table 4.
Marking codes
Marking code
AJ
AK
AL
AM
AN
AP
AQ
AR
AS
AT
AU
AV
AW
AX
AY
AZ
B1
B2
Type number
PTVS20VP1UP
PTVS22VP1UP
PTVS24VP1UP
PTVS26VP1UP
PTVS28VP1UP
PTVS30VP1UP
PTVS33VP1UP
PTVS36VP1UP
PTVS40VP1UP
PTVS43VP1UP
PTVS45VP1UP
PTVS48VP1UP
PTVS51VP1UP
PTVS54VP1UP
PTVS58VP1UP
PTVS60VP1UP
PTVS64VP1UP
-
Marking code
B3
B4
B5
B6
B7
B8
B9
BA
BB
BC
BD
BE
BF
BG
BH
BJ
BK
-
Type number
PTVS3V3P1UP
PTVS5V0P1UP
PTVS6V0P1UP
PTVS6V5P1UP
PTVS7V0P1UP
PTVS7V5P1UP
PTVS8V0P1UP
PTVS8V5P1UP
PTVS9V0P1UP
PTVS10VP1UP
PTVS11VP1UP
PTVS12VP1UP
PTVS13VP1UP
PTVS14VP1UP
PTVS15VP1UP
PTVS16VP1UP
PTVS17VP1UP
PTVS18VP1UP
PTVSXP1UP_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 6 January 2011
2 of 12
NXP Semiconductors
PTVSxP1UP series
600 W Transient Voltage Suppressor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
PPM
I
PPM
Parameter
rated peak pulse power
rated peak pulse current
Conditions
[1]
[1]
Min
-
-
Max
600
see
Table 9
and
10
100
150
+150
+150
Unit
W
I
FSM
T
j
T
amb
T
stg
[1]
Non-repetitive peak
forward current
junction temperature
ambient temperature
storage temperature
single half-sine
wave; t
p
= 8.3 ms
-
-
−55
−65
A
°C
°C
°C
In accordance with IEC 61643-321 (10/1000
μs
current waveform).
Table 6.
ESD maximum ratings
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
ESD
[1]
[2]
Parameter
electrostatic discharge voltage
Conditions
IEC 61000-4-2
(contact discharge)
[1][2]
Min
-
Max
30
Unit
kV
Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses.
Soldering point of cathode tab.
Table 7.
Standard
Per diode
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
6. Thermal characteristics
Table 8.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1]
[2]
[3]
Min
-
-
-
-
Typ
-
-
-
-
Max
200
120
60
12
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
[3]
[4]
PTVSXP1UP_SER
thermal resistance from
junction to solder point
[4]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Soldering point of cathode tab.
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 6 January 2011
3 of 12
NXP Semiconductors
PTVSxP1UP series
600 W Transient Voltage Suppressor
7. Characteristics
Table 9.
Characteristics per type; PTVS3V3P1UP to PTVS7V0P1UP
T
j
= 25
°
C unless otherwise specified.
Type number
Reverse standoff
voltage
V
RWM
(V)
I
R
= 10 mA
Max
PTVS3V3P1UP
PTVS5V0P1UP
PTVS6V0P1UP
PTVS6V5P1UP
PTVS7V0P1UP
3.3
5.0
6.0
6.5
7.0
Min
5.20
6.40
6.67
7.22
7.78
Typ
5.60
6.70
7.02
7.60
8.20
Max
6.00
7.00
7.37
7.98
8.60
Breakdown voltage
V
BR
(V)
Reverse leakage
current
I
RM
(μA)
at V
RWM
(V)
Typ
5
5
5
5
3
Max
600
400
400
250
100
Max
8.0
9.2
10.3
11.2
12.0
I
PPM
(A)
75.0
65.2
58.3
53.6
50.0
Clamping voltage
V
CL
(V)
Table 10. Characteristics per type; PTVS7V5P1UP to PTVS64VP1UP
T
j
= 25
°
C unless otherwise specified.
Type number
Reverse standoff
voltage
V
RWM
(V)
I
R
= 1 mA
Max
PTVS7V5P1UP
PTVS8V0P1UP
PTVS8V5P1UP
PTVS9V0P1UP
PTVS10VP1UP
PTVS11VP1UP
PTVS12VP1UP
PTVS13VP1UP
PTVS14VP1UP
PTVS15VP1UP
PTVS16VP1UP
PTVS17VP1UP
PTVS18VP1UP
PTVS20VP1UP
PTVS22VP1UP
PTVS24VP1UP
PTVS26VP1UP
PTVS28VP1UP
PTVS30VP1UP
PTVS33VP1UP
PTVS36VP1UP
PTVS40VP1UP
PTVSXP1UP_SER
Breakdown voltage
V
BR
(V)
Reverse leakage
current
I
RM
(μA)
at V
RWM
(V)
Clamping voltage
V
CL
(V)
Min
8.33
8.89
9.44
10.00
11.10
12.20
13.30
14.40
15.60
16.70
17.80
18.90
20.00
22.20
24.40
26.70
28.90
31.10
33.30
36.70
40.00
44.40
Typ
8.77
9.36
9.92
10.55
11.70
12.85
14.00
15.15
16.40
17.60
18.75
19.90
21.00
23.35
25.60
28.10
30.40
32.80
35.10
38.70
42.10
46.80
Max
9.21
9.83
10.40
11.10
12.30
13.50
14.70
15.90
17.20
18.50
19.70
20.90
22.10
24.50
26.90
29.50
31.90
34.40
36.80
40.60
44.20
49.10
Typ
0.2
0.03
0.01
0.005
0.005
0.005
0.005
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
Max
50
25
10
5
2.5
2.5
2.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
Max
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
I
PPM
(A)
46.5
44.1
41.7
39.0
35.3
33.0
30.2
27.9
25.9
24.6
23.1
21.7
20.5
18.5
16.9
15.4
14.3
13.2
12.4
11.3
10.3
9.3
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 6 January 2011
4 of 12
NXP Semiconductors
PTVSxP1UP series
600 W Transient Voltage Suppressor
Table 10. Characteristics per type; PTVS7V5P1UP to PTVS64VP1UP
…continued
T
j
= 25
°
C unless otherwise specified.
Type number
Reverse standoff
voltage
V
RWM
(V)
I
R
= 1 mA
Max
PTVS43VP1UP
PTVS45VP1UP
PTVS48VP1UP
PTVS51VP1UP
PTVS54VP1UP
PTVS58VP1UP
PTVS60VP1UP
PTVS64VP1UP
43
45
48
51
54
58
60
64
Min
47.80
50.00
53.30
56.70
60.00
64.40
66.70
71.10
Typ
50.30
52.65
56.10
59.70
63.15
67.80
70.20
74.85
Max
52.80
55.30
58.90
62.70
66.30
71.20
73.70
78.60
Breakdown voltage
V
BR
(V)
Reverse leakage
current
I
RM
(μA)
at V
RWM
(V)
Typ
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
Max
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
Max
69.4
72.7
77.4
82.4
87.1
93.6
96.8
103.0
I
PPM
(A)
8.6
8.3
7.8
7.3
6.9
6.4
6.2
5.8
Clamping voltage
V
CL
(V)
PTVSXP1UP_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 6 January 2011
5 of 12
Microchip MCU
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