PT60QHx45
PT60QHx45
Pulse Power Thyristor Switch
Preliminary Information
Replaces February 2000 version, DS5267-1.3
DS5267-1.4 April 2000
APPLICATIONS
q
q
q
Pulse Power
Crowbars
Ignitron Replacement
KEY PARAMETERS
4500V
V
DRM
I
T(AV)
1000A
I
TSM
22500A
dI/dt
10,000A/
µ
s
FEATURES
q
q
q
Double Side Cooling
Fast Turn-on
Low Turn-on Losses
VOLTAGE RATINGS
Type Number
Repetitive Peak
Voltages
V
DRM
/V
RRM
V
4500/16
Conditions
PT60QHx45
T
vj
= 0˚ to 125˚C,
I
DRM
= I
RRM
= 100mA,
V
DRM
, V
RRM
t
p
= 10ms
Outline type code: H.
See Package Details for further information.
Lower voltage grades available.
Fig.1 Package outline
CURRENT RATINGS
Symbol
Double Side Cooled
I
T(AV)
I
T(RMS)
Mean on-state current
RMS value
Half wave resistive load, T
case
= 80
o
C
T
case
= 80
o
C
1000
1570
A
A
Parameter
Conditions
Max.
Units
1/6
PT60QHx45
SURGE RATINGS
Symbol
I
TSM
I
2
t
I
TSM
I
2
t
Parameter
Surge (non-repetitive) on-state current
I
2
t for fusing
Surge (non-repetitive) on-state current
I
2
t for fusing
Conditions
10ms half sine; T
case
= 125
o
C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine; T
case
= 125
o
C
V
R
= 0
Max.
17.8
15.8 x 10
6
22.5
2.52 x 10
6
Units
kA
A
2
s
kA
A
2
s
THERMAL AND MECHANICAL DATA
Symbol
R
th(j-c)
R
th(c-h)
Parameter
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Conditions
Double side cooled
Clamping force 19.5kN
with mounting compound
On-state (conducting)
T
vj
Virtual junction temperature
Reverse (blocking)
T
stg
-
Storage temperature range
Clamping force
-
–55
18
125
125
22
o
Min.
dc
Double side
-
-
Max.
0.013
0.003
Units
o
C/W
C/W
o
o
-
135
C
C
C
o
kN
DYNAMIC CHARACTERISTICS
Symbol
I
RRM
/I
DRM
dV/dt
dI/dt
Parameter
Peak reverse and off-state current
Maximum linear rate of rise of off-state voltage
Rate of rise of on-state current
Conditions
At V
RRM
/V
DRM
, T
case
= 125
o
C
To 67% V
DRM
T
j
= 125
o
C. R
gk
≤
1.5Ω
From 67% V
DRM
to 40kA
Gate source 60A
t
r
= 1.5µs to 1A, T
j
= 25
o
C
At T
vj
= 125
o
C
At T
vj
= 125
o
C
Non-repetitive
Typ.
-
-
-
Max.
100
175
10000
Units
mA
V/µs
A/µs
V
T(TO)
r
T
Threshold voltage
On-state slope resistance
-
-
1.5
0.67
V
mΩ
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
V
GT
I
GT
2/6
Parameter
Gate trigger voltage
Gate trigger current
Conditions
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
Typ.
-
-
Max.
1.0
3
Units
V
A
PT60QHx45
ORDERING INFORMATION
PT
40Q
P
x
45
Pulse Power Thyristor
Device type
Package outline type code
lead length (see table, right)
Voltage x100
O
C
D
E
F
G
H
J
K
L
Lead length (x)
No lead
8"
10"
12"
16"
18"
20"
24"
30"
40"
200mm
250mm
300mm
400mm
450mm
500mm
600mm
750mm
1000mm
CURVES
5000
Measured under pulse conditions
1
2
4000
Instantaneous on-state current, I
T
- (A)
1: T
j
= 25˚C Max
2: T
j
= 125˚C Max
3000
2000
1000
0
1.0
2.0
3.0
4.0
Instantaneous on-state voltage, V
T
- (V)
5.0
Fig.2 Maximum (limit) on-state characteristics
3/6
PT60QHx45
0.1
Thermal impedance - (˚C/W)
0.01
Double side cooled
0.001
Conduction
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
0.0001
0.001
0.01
0.1
Time - (s)
1
Effective thermal resistance
Junction to case ˚C/W
Double side
0.0130
0.0141
0.0170
0.0200
10
100
Fig.3 Maximum (limit) transient thermal impedance - junction to case
4/6
PT60QHx45
Package Details
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø3.60
±
0.05 x 2.0
±
0.1 deep (One in each electrode)
Cathode Aux. Tube
Gate Tube
15˚
52
Ø100
Ø62.85
Anode
9.6
Ø62.85
55
Cathode
Nominal weight: 820g
Clamping force: 20kN
±10%
Package outine type code: H
26
±
0.5
5/6
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