BFY50/51
MEDIUM POWER AMPLIFIER
DESCRIPTION
The BFY50 and BFY52 are silicon planar
epitaxial NPN transistors in Jedec TO-39 metal
case. They are intended for general purpose
linear and switching applications.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
t ot
T
stg
T
j
Parameter
BFY50
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Total Dissipation at T
amb
≤
25 C
at T
case
≤
25
o
C
St orage Temperature
Max. Operating Junction Temperature
o
Value
BFY51
60
30
6
1
1.5
0.8
5
-65 to 200
200
80
35
Unit
V
V
V
A
A
W
W
o
o
C
C
1/5
November 1997
BFY50/BFY51
THERMAL DATA
R
t hj-ca se
R
t hj- amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
35
218
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symb ol
I
CBO
Parameter
Collector Cut-off
Current (I
E
= 0)
Test Cond ition s
for
BFY50
V
CB
= 60 V
V
CB
= 60 V
for
BFY51
V
CB
= 40 V
V
CB
= 40 V
V
EB
= 5 V
V
EB
= 5 V
I
C
= 100
µA
for
BFY50
for
BFY51
I
C
= 30 mA
for
BFY50
for
BFY51
I
C
= 100
µA
Min.
Typ .
Max.
50
2.5
50
2.5
50
2.5
80
60
35
30
6
Un it
nA
µA
nA
µA
nA
µA
V
V
V
V
V
T
ca s e
= 100 C
o
o
T
ca s e
= 100 C
T
case
= 100 C
o
I
EBO
V
(BR)CBO
Emitter Cut-off Current
(I
C
= 0)
Collector-Base
Breakdown Voltage
(IE = 0)
V
( BR)CEO
∗
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
Collector-Emitter
Saturation Voltage
V
CE(sat )
∗
I
C
= 150 mA
for
BFY50
for
BFY51
I
C
= 1 A
for
BFY50
for
BFY51
I
C
= 150 mA
I
C
= 1 A
for
BFY50
I
C
= 10 mA
I
C
= 150 mA
I
C
= 1A
for
BFY51
I
C
= 10 mA
I
C
= 150 mA
I
C
= 1A
V
CE
= 6 V
I
C
= 1 mA
for
BFY50
for
BFY51
I
C
= 10 mA
for
BFY50
for
BFY51
I
C
= 50 mA
for
BFY50
for
BFY51
I
E
= 0
I
B
= 15 mA
0.14
0.14
I
B
= 0.1 A
0.7
0.7
I
B
= 15 mA
I
B
= 0.1 A
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
f = 1KHz
25
30
45
60
V
CE
= 10 V
60
50
f = 1MHz
100
110
10
MHz
MHz
pF
20
30
15
30
40
15
0.95
1.5
40
55
30
55
70
40
1
1.6
1.3
2
V
V
V
V
0.2
0.35
V
V
V
BE(s at)
∗
h
FE
∗
Base-Emitter
Saturation Voltage
DC Current G ain
h
fe
∗
Small Signal Current
Gain
f
T
Transition F requency
C
CBO
Collector Base
Capacitance
V
CB
= 10 V
∗
Pulsed: Pulse duration = 300
µs,
duty cycle
≤
1 %
2/5
BFY50/BFY51
ELECTRICAL CHARACTERISTICS
(continued)
Symb ol
h
ie
Parameter
Input Impedance
Test Cond ition s
I
C
= 10 mA
for
BFY50
for
BFY51
I
C
= 10 mA
for
BFY50
for
BFY51
I
C
= 10 mA
for
BFY50
for
BFY51
I
C
= 150 mA
I
B1
= 15 mA
I
C
= 150 mA
I
B1
= 15 mA
V
CE
= 5 V
f = 1KHz
180
220
V
CE
= 5 V
f = 1KHz
55
70
V
CE
= 5 V
f = 1KHz
30
35
V
CC
= 10 V
V
BE
= -2 V
V
CC
= 10 V
V
BE
= -2 V
15
40
300
60
Min.
Typ .
Max.
Un it
Ω
Ω
10
10
-6
µS
µS
ns
ns
ns
ns
-6
h
re
Reverse Voltage Ratio
h
oe
Output Admittance
t
d
t
r
t
s
t
f
Delay Time
Rise Time
Storage Time
Fall T ime
I
C
= 150 mA
V
CC
= 10 V
I
B1
= -I
B2
= 15 mA
I
C
= 150 mA
V
CC
= 10 V
I
B1
= -I
B2
= 15 mA
∗
Pulsed: Pulse duration = 300
µs,
duty cycle
≤
1 %
3/5
BFY50/BFY51
TO-39 MECHANICAL DATA
mm
DIM.
MIN.
A
B
D
E
F
G
H
I
L
5.08
1.2
0.9
45
o
(typ.)
12.7
0.49
6.6
8.5
9.4
0.200
0.047
0.035
TYP.
MAX.
MIN.
0.500
0.019
0.260
0.334
0.370
TYP.
MAX.
inch
D
G
I
H
E
F
A
L
B
P008B
4/5
BFY50/BFY51
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied.
s
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
©
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
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