DISCRETE SEMICONDUCTORS
DATA SHEET
M3D111
BFY50; BFY51; BFY52
NPN medium power transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Apr 22
Philips Semiconductors
Product specification
NPN medium power transistors
FEATURES
•
High current (max. 1 A)
•
Low voltage (max. 35 V).
APPLICATIONS
•
General purpose industrial applications.
DESCRIPTION
NPN medium power transistor in a TO-39 metal package.
1
handbook, halfpage
2
BFY50; BFY51; BFY52
PINNING
PIN
1
2
3
emitter
base
collector, connected to case
DESCRIPTION
3
2
3
MAM317
1
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
V
CBO
PARAMETER
collector-base voltage
BFY50
BFY51
BFY52
V
CEO
collector-emitter voltage
BFY50
BFY51
BFY52
I
CM
P
tot
h
FE
peak collector current
total power dissipation
DC current gain
BFY50
BFY51
BFY52
f
T
transition frequency
BFY50
BFY51; BFY52
I
C
= 50 mA; V
CE
= 10 V; f = 100 MHz
60
50
−
−
−
−
MHz
MHz
T
amb
≤
25
°C
T
case
≤
100
°C
I
C
= 150 mA; V
CE
= 10 V
30
40
60
112
123
142
−
−
−
open base
−
−
−
−
−
−
−
−
−
−
−
−
35
30
20
1
800
2.86
V
V
V
A
mW
W
open emitter
−
−
−
−
−
−
80
60
40
V
V
V
CONDITIONS
MIN.
TYP.
MAX.
UNIT
1997 Apr 22
2
Philips Semiconductors
Product specification
NPN medium power transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
BFY50
BFY51
BFY52
V
CEO
collector-emitter voltage
BFY50
BFY51
BFY52
V
EBO
I
C
I
CM
I
BM
P
tot
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
T
amb
≤
25
°C
T
case
≤
25
°C
open collector
open base
PARAMETER
collector-base voltage
CONDITIONS
open emitter
BFY50; BFY51; BFY52
MIN.
−
−
−
−
−
−
−
−
−
−
−
−
−
−65
−
−65
MAX.
80
60
40
35
30
20
6
1
1
100
800
5
2.86
+150
200
+150
V
V
V
V
V
V
V
A
A
UNIT
mA
mW
W
W
°C
°C
°C
25
°C <
T
case
< 100
°C
T
stg
T
j
T
amb
storage temperature
junction temperature
operating ambient temperature
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-c
PARAMETER
thermal resistance from junction to case
CONDITIONS
VALUE
220
35
UNIT
K/W
K/W
thermal resistance from junction to ambient in free air
1997 Apr 22
3
Philips Semiconductors
Product specification
NPN medium power transistors
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
BFY50
PARAMETER
collector cut-off current
I
E
= 0; V
CB
= 60 V
I
E
= 0; V
CB
= 60 V; T
j
= 100
°C
I
E
= 0; V
CB
= 80 V
I
E
= 0; V
CB
= 80 V; T
j
= 100
°C
I
CBO
collector cut-off current
BFY51
I
E
= 0; V
CB
= 40 V
I
E
= 0; V
CB
= 40 V; T
j
= 100
°C
I
E
= 0; V
CB
= 60 V
I
E
= 0; V
CB
= 60 V; T
j
= 100
°C
I
CBO
collector cut-off current
BFY52
I
E
= 0; V
CB
= 30 V
I
E
= 0; V
CB
= 30 V; T
j
= 100
°C
I
E
= 0; V
CB
= 40 V
I
E
= 0; V
CB
= 40 V; T
j
= 100
°C
I
EBO
emitter cut-off current
I
C
= 0; V
EB
= 5 V
I
C
= 0; V
EB
= 5 V; T
j
= 100
°C
I
C
= 0; V
EB
= 6 V
h
FE
DC current gain
BFY50
I
C
= 10 mA; V
CE
= 10 V
I
C
= 150 mA; V
CE
= 10 V
I
C
= 500 mA; V
CE
= 10 V
I
C
= 1 A; V
CE
= 10 V
h
FE
DC current gain
BFY51
I
C
= 10 mA; V
CE
= 10 V
I
C
= 150 mA; V
CE
= 10 V
I
C
= 500 mA; V
CE
= 10 V
I
C
= 1 A; V
CE
= 10 V
h
FE
DC current gain
BFY52
I
C
= 10 mA; V
CE
= 10 V
I
C
= 150 mA; V
CE
= 10 V
I
C
= 500 mA; V
CE
= 10 V
I
C
= 1 A; V
CE
= 10 V
CONDITIONS
BFY50; BFY51; BFY52
MIN.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
20
30
20
15
30
40
25
15
30
60
30
15
TYP.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
MAX.
50
2.5
500
30
50
2.5
500
30
50
2.5
500
30
50
2.5
500
−
−
−
−
−
−
−
−
−
−
−
−
UNIT
nA
µA
nA
µA
nA
µA
nA
µA
nA
µA
nA
µA
nA
µA
nA
1997 Apr 22
4
Philips Semiconductors
Product specification
NPN medium power transistors
BFY50; BFY51; BFY52
SYMBOL
V
CEsat
BFY50
PARAMETER
collector-emitter saturation voltage
CONDITIONS
I
C
= 10 mA; I
B
= 1 mA
I
C
= 150 mA; I
B
= 15 mA
I
C
= 500 mA; I
B
= 50 mA
I
C
= 1 A; I
B
= 100 mA
MIN.
−
−
−
−
−
−
−
−
−
−
−
−
−
60
50
−
−
−
−
−
−
TYP.
−
−
−
−
−
−
−
−
−
−
−
−
7
140
−
MAX.
200
200
700
1
200
350
1
1.6
1.2
1.3
1.5
2
12
−
−
−
−
−
−
−
−
UNIT
mV
mV
mV
V
mV
mV
V
V
V
V
V
V
pF
MHz
MHz
V
CEsat
collector-emitter saturation voltage
BFY51; BFY52
I
C
= 10 mA; I
B
= 1 mA
I
C
= 150 mA; I
B
= 15 mA
I
C
= 500 mA; I
B
= 50 mA
I
C
= 1 A; I
B
= 100 mA
V
BEsat
base-emitter saturation voltage
I
C
= 10 mA; I
B
= 1 mA
I
C
= 150 mA; I
B
= 15 mA
I
C
= 500 mA; I
B
= 50 mA
I
C
= 1 A; I
B
= 100 mA
C
c
f
T
collector capacitance
transition frequency
BFY50
BFY51; BFY52
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 50 mA; V
CE
= 10 V;
f = 100 MHz; T
amb
= 25
°C
Switching times (between 10% and 90% levels)
t
on
t
d
t
r
t
off
t
s
t
f
turn-on time
delay time
rise time
turn-off time
storage time
fall time
I
Con
= 150 mA; I
Bon
= 15 mA;
I
Boff
=
−15
mA
55
15
40
360
300
60
ns
ns
ns
ns
ns
ns
1997 Apr 22
5
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