BFY420
HiRel
NPN Silicon RF Transistor
•
•
•
•
•
•
•
HiRel
Discrete and Microwave Semiconductor
For High Gain Low Noise Amplifiers
For Oscillators up to 10 GHz
Noise Figure F = 1.1 dB at 1.8 GHz
Outstanding Gms = 21dB at 1.8 GHz
Hermetically sealed microwave package
Transition Frequency
f
T = 22 GHz
SIEGET 25-Line
Infineon Technologies Grounded Emitter Transistor-
25
GHz fT-Line
Space Qualified
ESA/SCC Detail Spec. No.: 5611/008
Type Variant No. 02
ESD: Electrostatic discharge
sensitive device,
observe handling precautions!
Type
BFY420 (ql)
(ql) Quality Level:
Marking
-
Ordering Code
see below
Pin Configuration
1
C
2
E
3
B
4
E
Micro-X
Package
4
3
1
2
P: Professional Quality,
H: High Rel Quality,
S: Space Quality,
ES: ESA Space Quality,
Ordering Code:
Ordering Code:
Ordering Code:
Ordering Code:
Q62702F1662
on request
on request
Q62702F1709
(see order instructions for ordering example)
Semiconductor Group
1 of 5
Draft B, September 99
BFY420
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation,
1), 2)
T
S
≤
129°C
Junction temperature
Operating temperature range
Storage temperature range
Thermal Resistance
Junction-soldering point
2)
R
th JS
<
285
K/W
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
op
T
stg
Values
4.5
15
1.5
35
3.0
160
175
-65...+175
-65...+175
Unit
V
V
V
mA
mA
mW
°C
°C
°C
Notes.:
1) At T
S
= + 129 °C. For T
S
> + 129 °C derating is required.
2) T
S
is measured on the collector lead at the soldering point to the pcb.
Electrical Characteristics
at T
A
=25°C; unless otherwise specified
Parameter
DC Characteristics
Collector-base cutoff current
V
CB
= 5 V, I
E
= 0
Collector-emitter cutoff current
1.)
V
CE
= 4.5 V, I
B
= 1.0µA
Emitter-base cuttoff current
V
EB
= 1.5 V, I
C
= 0
DC current gain
I
C
= 5 mA, V
CE
= 1 V
Notes:
1.) This Test assures V(BR)
CE0
> 4.5V
h
FE
50
90
150
-
I
EBO
-
-
I
CEX
-
-
200
(t.b.d.)
20
µA
µA
I
CBO
-
-
30
nA
Symbol
min.
Values
typ.
max.
Unit
Semiconductor Group
2 of 5
Draft B, September 99
BFY420
Electrical Characteristics
(continued)
Parameter
AC Characteristics
Transition frequency
I
C
= 30mA, V
CE
= 3 V, f = 2.0 GHz
Collector-base capacitance
V
CB
= 2 V, V
BE
= vbe = 0, f = 1 MHz
Collector-emitter capacitance
V
CE
= 2 V, V
BE
= vbe = 0, f = 1 MHz
Emitter-base capacitance
V
EB
= 0.5V, V
CB
= vcb = 0, f = 1 MHz
Noise Figure
I
C
= 5 mA, V
CE
= 2 V, f = 1.8 GHz,
Z
S
= Z
sopt
Insertion power gain
I
C
= 20 mA, V
CE
= 2 V, f = 1.8 GHz
Z
S
= Z
L
= 50
Ω
Power gain
I
C
= 20 mA, V
CE
= 2 V, f = 1.8 GHz
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
1dB Compression point
I
C
= 20 mA, V
CE
= 2 V, f = 1.8 GHz
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
Notes.:
P
-1dB
-
12
-
dBm
Gms
1.)
Symbol
min.
f
T
20
C
CB
C
CE
C
EB
F
-
-
-
-
Values
typ.
max.
Unit
GHz
22
0.14
0.46
0.67
1.1
-
0.9
0.85
3.0
1.7
pF
pF
pF
dB
|S
21e
|
2
14
18
-
dB
-
21
-
dB
1)
G
ms
=
S
21
S
12
Semiconductor Group
3 of 5
Draft B, September 99
BFY420
Order Instructions:
Full type variant including quality level must be specified by the orderer. For
HiRel
Discrete
and Microwave Semiconductors the ordering code specifies device family and quality level.
Ordering Form:
Ordering Code: Q..........
BFY420 (ql)
(ql): Quality Level
Ordering Example:
Ordering Code: Q62702F1709
BFY420 ES
For BFY420 in ESA Space Quality Level
Further Informations:
See our WWW-Pages:
- Discrete and RF-Semiconductors (Small Signal Semiconductors)
www.infineon.com/products/discrete/hirel.htm
-
HiRel
Discrete and Microwave Semiconductors
www.infineon.com/products/discrete/hirel.htm
Please contact also our marketing division :
Tel.:
Fax.:
e-mail:
Address:
++89 234 24480
++89 234 28438
martin.wimmers@infineon.com
Infineon Technologies Semiconductors,
High Frequency Products Marketing,
P.O.Box 801709,
D-81617 Munich
Semiconductor Group
4 of 5
Draft B, September 99
BFY420
Micro-X Package
4
Published by Infineon Technologies Semiconductors,
High Frequency Products Marketing, P.O.Box 801709,
D-81617 Munich.
Infineon Technologies AG 1998. All Rights Reserved.
As far as patents or other rights of third parties are
concerned, liability is only assumed for components per
se, not for applications, processes and circuits
implemented within components or assemblies.
The information describes the type of component and shall
not be considered as assured characteristics.
Terms of delivery and rights to change design reserved.
For questions on technology, delivery and prices please
contact the Offices of Semiconductor Group in Germany or
the
Infineon
Technologies
Companies
and
Representatives woldwide (see address list).
Due to technical requirements components may contain
dangerous substances. For information on the type in
question please contact your nearest Infineon
Technologies Office, Semiconductor Group.
Infineon Technologies Semiconductors is a certified CECC
and QS9000 manufacturer (this includes ISO 9000).
3
1
2
Semiconductor Group
5 of 5
Draft B, September 99
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