HiRel
NPN Silicon RF Transistor
Features
¥
¥
¥
¥
¥
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HiRel
Discrete and Microwave Semiconductor
For low noise, high gain amplifiers up to 2 GHz.
For linear broadband amplifiers
Hermetically sealed microwave package
f
T
= 6.5 GHz,
F
= 3 dB at 2 GHz
ESA Qualification pending
Micro-X1
ESD: E
lectro
s
tatic
d
ischarge sensitive device, observe handling precautions!
Type
BFY 196 (ql)
Marking
-
Ordering Code
see below
H: High Rel Quality,
S: Space Quality,
Pin Configuration
C
E
B
E
BFY 196
Package
Micro-X1
(ql) Quality Level: P: Professional Quality, Ordering Code: Q62702F1684
Ordering Code: on request
Ordering Code: on request
(see
Chapter Order Instructions
for ordering example)
Table 1
Parameter
Collector-emitter voltage
Collector-emitter voltage,
V
BE
= 0
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation,
T
S
£
104
°
C
2)
Junction temperature
Operating temperature range
Storage temperature range
Thermal Resistance
Junction soldering point
2)
1)
2)
Maximum Ratings
Symbol
Limit Values
12
20
20
2
100
12
1)
700
200
-
65 É
+
200
-
65 É
+
200
< 135
Unit
V
V
V
V
mA
mA
mW
°
C
°
C
°
C
K/W
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
op
T
stg
R
th JS
The maximum permissible base current for
V
FBE
measurements is 50 mA (spot measurement duration < 1 s).
T
S
is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Draft A03 1998-04-01
BFY 196
Electrical Characteristics
Table 2
Parameter
Collector-base cutoff current
V
CB
= 20 V,
I
E
= 0
Collector-emitter cutoff current
V
CE
= 12 V,
I
B
= 1
m
A
3)
Collector-base cutoff current
V
CB
= 10 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 2 V,
I
C
= 0
Emitter-base cutoff current
V
EB
= 1 V,
I
C
= 0
Base-emitter forward voltage
I
E
= 50 mA,
I
C
= 0
DC current gain
I
C
= 50 mA,
V
CE
= 8 V
3)
DC Characteristics
at
T
A
= 25
°
C unless otherwise specified
Symbol
min.
Limit Values
typ.
-
-
-
-
-
-
100
max.
100
1000
50
25
0.5
1
175
m
A
m
A
nA
m
A
m
A
V
-
-
-
-
-
-
-
50
Unit
I
CBO
I
CEX
I
CBO
I
EBO
I
EBO
V
FBE
h
FE
This test assures
V
(BR)CE0
> 12 V.
Semiconductor Group
2
Draft A03 1998-04-01
BFY 196
Table 3
Parameter
AC Characteristics
at
T
A
= 25
°C
unless otherwise specified
Symbol
min.
Limit Values
typ.
6.5
1
0.44
3.6
3
max.
-
1.3
-
4.3
3.5
GHz
pF
pF
pF
dB
6
-
-
-
-
Unit
Transition frequency
I
C
= 70 mA,
V
CE
= 5 V,
f
= 500 MHz
f
T
Collector-base capacitance
C
CB
V
CB
= 10 V,
V
BE
= vbe = 0,
f
= 1 MHz
Collector-emitter capacitance
C
CE
V
CE
= 10 V,
V
BE
= vbe = 0,
f
= 1 MHz
Emitter-base capacitance
C
EB
V
EB
= 0.5 V,
V
CB
= vcb = 0,
f
= 1 MHz
Noise figure
I
C
= 20 mA,
V
CE
= 5 V,
f
= 2 GHz,
Z
S
=
Z
Sopt
Power gain
I
C
= 70 mA,
V
CE
= 5 V,
f
= 2 GHz,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
Transducer gain
I
C
= 70 mA,
V
CE
= 5 V,
f
= 2 GHz,
Z
S
=
Z
L
= 50
W
Output power
I
C
= 80 mA,
V
CE
= 5 V,
f
= 2 GHz,
P
IN
= 15 dBm,
Z
S
=
Z
L
= 50
W
4)
F
G
ma 4)
½S
21e
½
2
10
11
-
dB
4
5
-
dB
P
out
18.5
19.5
-
dBm
G
ma
=
S21
(
k
Ð
k
Ð
1
),
G
ms
=
S21
----------
-
----------
-
S12
S12
2
Semiconductor Group
3
Draft A03 1998-04-01
BFY 196
Order Instructions
Full type variant including quality level must be specified by the orderer. For
HiRel
Discrete and Microwave Semiconductors the ordering code specifies device family and
quality level.
Ordering Form:
Ordering Code: QÉ
BFY196 (x) (ql)
(ql): Quality Level
Ordering Example:
Ordering Code: Q62702F1684
BFY196 P
For BFY196 in Professional Quality Level
Further Information
See our WWW-Pages:
Ð Discrete and RF-Semiconductors (Small Signal Semiconductors)
www.siemens.de/semiconductor/products/35/35.htm
Ð
HiRel
Discrete and Microwave Semiconductors
www.siemens.de/semiconductor/products/35/353.htm
Please contact also our marketing division:
Tel.: ++89 6362 4480
Fax.: ++89 6362 5568
e-mail: martin.wimmers@hl.siemens.de
Semiconductor Group
4
Draft A03 1998-04-01
BFY 196
1.05
±0.25
1.02
±0.1
2
0.76
0.5
±0.1
XY
3
4
1.78
4.2
-0.2
1
0.1
+0.05
-0.03
GXM05552
Figure 1
Micro-X1 Package
Semiconductor Group
5
ø1.65
±0.1
Draft A03 1998-04-01
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