OM6517SA
OM6526SA
INSULATED GATE BIPOLAR TRANSISTOR
(IGBT) IN A HERMETIC TO-254AA PACKAGE
1000 Volt, 15 And 20 Amp, N-Channel IGBT
In A Hermetic Metal Package
FEATURES
•
•
•
•
•
•
•
•
Isolated IGBTs In A Hermetic Package
High Input Impedance
Low On-Voltage
High Current Capability
High Switching Speed
Low Tail Current
Available Screened To MIL-S-19500, TX, TXV and S Levels
Ceramic Feedthroughs Available
DESCRIPTION
This IGBT power transistor features the high switching speeds of a power MOSFET
and the low on-resistance of a bipolar transistor. It is ideally suited for high power
switching applications such as frequency converters for 3Ø motors, UPS and high
power SMPS.
MAXIMUM RATINGS
@ 25°C Unless Specified Otherwise
PART
NUMBER
OM6517SA
OM6526SA
I
C
(Cont.)
@ 90°C, A
20
15
V
(BR)CES
V
1000
1000
V
CE (sat)
(Typ.)
V
4.0
4.0
T
f
(Typ.)
ns
300
300
q
JC
°C/W
1.0
1.5
P
D
W
125
85
T
J
°C
150
150
3.1
SCHEMATIC
.940
MECHANICAL OUTLINE
.144 DIA.
.260
MAX
.200
.100
2 PLCS.
.040
Collector
.545
.535
.740
.540
.050
.040
.250
.290
.685
.665
.800
.790
Z-Pak
.125 DIA.
2 PLS.
TO-254
.540
.550
.530
Gate
.125
2 PLCS.
.500
MIN.
.550
.510
.040 DIA.
3 PLCS.
.150
.005
Emitter
.150
.300
.045
.035
.150 TYP.
.260
.249
.150 TYP.
PACKAGE OPTIONS
MOD PAK
Z-TAB
6 PIN SIP
Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the part number. Example - OMXXXXCSA.
IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.
4 11 R2
Supersedes 2 07 R1
3.1 - 157
3.1
OM6517SA OM6526SA
PRELIMINARY DATA: OM6517SA
IGBT CHARACTERISTICS
Parameter - OFF
V
(BR)CES
Collector Emitter
Breakdown Voltage
I
CES
Zero Gate Voltage
Drain Current
0.25
1.0
±100
mA
mA
nA
Min. Typ. Max. Units Test Conditions
1000
V
V
CE
= 0
I
C
= 250 µA
V
CE
= Max. Rat., V
GE
= 0
V
CE
= 0.8 Max. Rat., V
GE
= 0
T
C
= 125°C
I
GES
Gate Emitter Leakage
Current
Parameter - ON
V
GE(th)
Gate Threshold Voltage
Saturation Voltage
V
CE(sat)
Collector Emitter
Saturation Voltage
Dynamic
g
fs
C
ies
C
oes
C
res
T
d(on)
t
r
T
d(off)
t
f
T
d(off)
t
f
E
off
Forward Transductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Delay Time
Fall Time
Turn-Off Losses
5.5
2000
160
65
50
200
200
300
200
200
1.5
S
pF
pF
pF
nS
nS
nS
nS
nS
nS
V
CEclamp
= 600 V, I
C
= 15 A
V
GE
= 15 V, R
g
= 3.3
V
CE
= 20 V, I
C
= 15 A
V
GE
= 0
V
CE
= 25 V
f = 1 mHz
V
CC
= 600 V, I
C
= 15 A
V
GE
= 15 V, R
g
= 3.3 ,
T
j
= 125°C
4.0
4.5
V
4.5
3.0
6.5
V
V
V
CE
= V
GE
, I
C
= 1 mA
V
GE
= 15 V, I
C
= 15 A
T
C
= 25°C
V
GE
= 15 V, I
C
= 15 A
T
C
= 125°C
V
CE(sat)
Collector Emitter
V
GE
= ±20 V
V
CE
= 0 V
PRELIMINARY DATA: OM6526SA
IGBT CHARACTERISTICS
Parameter - OFF
V
(BR)CES
Collector Emitter
Breakdown Voltage
I
CES
Zero Gate Voltage
Drain Current
I
GES
Gate Emitter Leakage
Current
Parameter - ON
V
GE(th)
Gate Threshold Voltage
Saturation Voltage
V
CE(sat)
Collector Emitter
Saturation Voltage
Dynamic
g
fs
C
ies
C
oes
C
res
T
d(on)
t
r
T
d(off)
t
f
T
d(off)
t
f
E
off
Forward Transductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Delay Time
Fall Time
Turn-Off Losses
3.5
1300
100
50
50
200
200
300
200
200
1.1
S
pF
pF
pF
nS
nS
nS
nS
nS
nS
V
CEclamp
= 600 V, I
C
= 10 A
V
GE
= 15 V, R
g
= 3.3
V
CE
= 20 V, I
C
= 10 A
V
GE
= 0
V
CE
= 25 V
f = 1 mHz
V
CC
= 600 V, I
C
= 10 A
V
GE
= 15 V, R
g
= 3.3 ,
T
j
= 125°C
4.0
4.5
V
4.5
3.0
6.5
V
V
V
CE
= V
GE
, I
C
= 700 µA
V
GE
= 15 V, I
C
= 10 A
T
C
= 25°C
V
GE
= 15 V, I
C
= 10 A
T
C
= 125°C
V
CE(sat)
Collector Emitter
150
700
±100
µA
µA
nA
Min. Typ. Max. Units Test Conditions
1000
V
V
CE
= 0
I
C
= 150 µA
V
CE
= Max. Rat., V
GE
= 0
V
CE
= 0.8 Max. Rat., V
GE
= 0
T
C
= 125°C
V
GE
= ±20 V
V
CE
= 0 V
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
Switching-Resistive Load
Switching-Resistive Load
Switching-Inductive Load
Switching-Inductive Load
mWs L = 1 mH, T
j
= 125°C
mWs L = 1 mH, T
j
= 125°C
嵌入式系统
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