Preliminary Data Sheet
OM6423SP6
OM6424SP6
OM6425SP6
OM6426SP6
POWER MOSFETS IN 11-PIN INDUSTRIAL
SIP PACKAGE
Industrial 11-Pin, 150 to 500 V, N-Channel
Power MOSFET, Full “H” Bridge
FEATURES
•
•
•
•
Low R
DS(on)
Fast Switching
Single SIP Package
3 Voltage, Current Ratings
DESCRIPTION
This series of “H” Bridge configured circuits provides the user with a low cost solution
to power control. Ideally suited for stepper motors, limited span designs, lighting
systems, and D.C. motor applications.
2.1
SCHEMATIC
MECHANICAL OUTLINE
1.140
1.100
.550
.125
.250
.145
.250
MAX.
.190
.062
.930
.690
.785
.115
1
2
3
4 5,6,7 8
9
10
11
.018
.100
1.000
.071
.057
.010
.250
MIN.
FOR FURTHER INFORMATION, CONTACT FACTORY DIRECT OR YOUR LOCAL SALES REPRESENTATIVE.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
4 11 R1
Supersedes 2 07 R0
2.1 - 123
OM6423SP6 - OM6426SP6
ELECTRICAL CHARACTERISTICS:
Characteristic
Drain-Source Breakdown Voltage
(V
GS
= 0, I
D
= 0.25mA)
Zero Gate Voltage Drain Current
(V
DS
= Rated V
DSS
, V
GS
= 0)
(V
DS
= Rated V
DSS
, V
GS
= 0, T
J
= 85°C)
Gate-Body Leakage Current, Forward
(V
GSF
= ±20 Vdc, V
DS
= 0)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250µA)
Static Drain-Source-On-Resistance
(V
GS
= 10V
dc
)
Drain-Source-On-Voltage
(V
GS
= 10V, T
J
= 85°C)
Forward Transconductance (V
DS
= 10V, I
D
= 12A)
Input Capacitance
(V
DS
= 25V,
Output Capacitance
V
GS
= 0,
Reverse Transfer Capacitance
f = 1MHz)
Turn-On Delay Time
(V
DD
= 25V, I
D
= 2A)
Turn-Off Delay Time
(V
DD
= 25V, I
D
= 2A)
Source Drain Diode Forward On Voltage I
f
= 10
T = 25° unless otherwise noted.
6423SP6
Symbol
Min.
Max.
V
(BR)DSS
50
150
I
DSS
-
250
-
1000
I
GSSF
500
500
V
GS(th)
2.0
4.0
r
DS(on)
@ I
D
=
V
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
d(off)
V
SD
.02
-
-
-
-
-
-
-
-
-
.08
5.0
.4
8.0
700
450
180
20
110
1.6
6424SP6
Min.
Max.
100
-
-
500
2.0
-
-
-
-
-
-
-
-
-
-
-
250
1000
500
Units
V
dc
µA
nA
V
4.0
.16
4.0
.64
5.0
850
260
50
30
40
1.6
A
V
mhos
pF
pF
pF
ns
ns
V
2.1
ELECTRICAL CHARACTERISTICS:
Characteristic
Drain-Source Breakdown Voltage
(V
GS
= 0, I
D
= 0.25mA)
Zero Gate Voltage Drain Current
(V
DS
= Rated V
DSS
, V
GS
= 0)
(V
DS
= Rated V
DSS
, V
GS
= 0, T
J
= 85°C)
Gate-Body Leakage Current, Forward
(V
GSF
= ±20 Vdc, V
DS
= 0)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250µA)
Static Drain-Source-On-Resistance
(V
GS
= 10V
dc
)
Drain-Source-On-Voltage
(V
GS
= 10V, T
J
= 85°C)
Forward Transconductance (V
DS
= 10V, I
D
= 12A)
Input Capacitance
(V
DS
= 25V,
Output Capacitance
V
GS
= 0,
Reverse Transfer Capacitance
f = 1MHz)
Turn-On Delay Time
(V
DD
= 25V, I
D
= 2A)
Turn-Off Delay Time
(V
DD
= 25V, I
D
= 2A)
Source Drain Diode Forward On Voltage I
f
= 4
T = 25° unless otherwise noted.
6425SP6
Symbol
Min.
Max.
V
(BR)DSS
200
-
I
DSS
-
250
-
1000
I
GSSF
500
500
V
GS(th)
2.0
4.0
r
DS(on)
@ I
D
=
V
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
d(off)
V
SD
-
-
-
-
-
-
-
-
-
-
.8
2.0
1.6
1.3
600
300
80
40
100
1.6
6426SP6
Min.
Max.
500
-
-
500
2.0
-
-
-
-
-
-
-
-
-
-
-
250
1000
500
Units
V
dc
µA
nA
V
4.0
3.0
1.0
3.0
1.0
400
150
40
60
30
1.6
A
V
mhos
pF
pF
pF
ns
ns
V
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
