OM6009SA OM6011SA OM6109SA OM6111SA
OM6010SA OM6012SA OM6110SA OM6112SA
POWER MOSFETS IN HERMETIC ISOLATED
TO-254AA PACKAGE
100V Thru 500V, Up To 22 Amp, N-Channel
MOSFET In Hermetic Metal Package, With
Optional Zener Gate Clamp Protection
FEATURES
•
•
•
•
•
•
Isolated Hermetic Metal Package
Fast Switching
Low R
DS(on)
Available Hi-Rel Screened To MIL-S-19500, TX, TXV And S Levels
Bi-Lateral Zener Gate Protection (Optional)
Ceramic Feedthroughs Available
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications
such as switching power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits. The MOSFET gates are protected using
bi-lateral zeners in the OM6109SA series.
MAXIMUM RATINGS
PART NUMBER
OM6009SA, OM6109SA
OM6010SA, OM6110SA
OM6011SA, OM6111SA
OM6012SA, OM6112SA
V
DS
100V
200V
400V
500V
R
DS(ON)
.095
.18
.55
.85
I
D(MAX)
22A
18A
10A
8A
3.1
Note: OM61XX Series include gate protection circuitry.
SCHEMATIC
POWER RATING
4 11 R3
Supersedes 1 07 R2
3.1 - 79
3.1
OM6009SA - OM6112SA
ELECTRICAL CHARACTERISTICS:
STATIC P/N OM6009SA / OM6109SA
Parameter
BV
DSS
Drain-Source Breakdown
Voltage
V
GS(th)
I
GSSF
I
GSSR
I
GSS
I
DSS
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Gate-Body Leakage (OM6109)
Zero Gate Voltage Drain
Current
I
D(on)
On-State Drain
Voltage
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
Current
1
22
0.1
0.2
2.0
100
T
C
= 25° unless otherwise noted
ELECTRICAL CHARACTERISTICS:
STATIC P/N OM6010SA / OM6110SA
Parameter
BV
DSS
Drain-Source Breakdown
Voltage
V
GS(th)
I
GSSF
I
GSSR
I
GSS
I
DSS
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Gate-Body Leakage (OM6110)
Zero Gate Voltage Drain
Current
I
D(on)
On-State Drain
Voltage
1
Current
1
18
1.4
0.1
0.2
2.0
200
T
C
= 25° unless otherwise noted
Min. Typ. Max. Units Test Conditions
V
4.0
100
-100
± 500
0.25
1.0
V
nA
nA
nA
mA
mA
A
1.275 1.425
.085 .095
.130 .155
V
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
GS
= 20 V
V
GS
= - 20 V
V
GS
= ± 12.8 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 15 A
V
GS
= 10 V, I
D
= 15 A
V
GS
= 10 V, I
D
= 15 A,
T
C
= 125 C
Min. Typ. Max. Units Test Conditions
V
4.0
100
- 100
± 500
0.25
1.0
V
nA
nA
nA
mA
mA
A
1.8
V
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS,
I
D
= 250
mA
V
GS
= 20 V
V
GS
= - 20 V
V
GS
= ± 12.8 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 10 A
V
GS
= 10 V, I
D
= 10 A
V
GS
= 10 V, I
D
= 10 A,
T
C
= 125 C
V
DS(on)
Static Drain-Source On-State
V
DS(on)
Static Drain-Source On-State
R
DS(on)
Static Drain-Source On-State
Resistance
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
0.14 0.18
0.28 0.36
g
fs
C
iss
C
oss
C
rss
T
d(on)
t
r
T
d(off)
t
f
10.0
1275
550
160
16
19
42
24
S(W
)
V
DS
2 V
DS(on)
, I
D
= 15 A
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 30 V, I
D
= 5 A
R
g
= 5
W
, V
GS
= 10 V
(MOSFET) switching times are
essentially independent of
operating temperature.
g
fs
C
iss
C
oss
C
rss
T
d(on)
t
r
T
d(off)
t
f
6.0
1000
250
100
17
52
36
30
S(W
)
V
DS
2 V
DS(on)
, I
D
= 10 A
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 75 V, I
D
@
18 A
R
g
= 5
W
, V
GS
= 10 V
(MOSFET) switching times are
essentially independent of
operating temperature.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
V
SD
t
rr
Continuous Source Current
(Body Diode)
Source Current
1
(Body Diode)
Diode Forward Voltage
1
Reverse Recovery Time
200
- 2.5
V
ns
- 108
A
- 27
A
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
S
Continuous Source Current
(Body Diode)
Source Current
1
(Body Diode)
Diode Forward Voltage
1
Reverse Recovery Time
350
- 18
- 72
-2
A
A
V
ns
T
C
= 25 C, I
S
= -24 A, V
GS
= 0
T
J
= 150 C,I
F
= I
S
,
dl
F
/ds = 100 A/ms
V
SD
t
rr
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
(W )
(W )
3.1 - 80
DYNAMIC
Forward Transductance
1
DYNAMIC
Forward Transductance
1
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
S
T
C
= 25 C, I
S
= -18 A, V
GS
= 0
T
J
= 150 C,I
F
= I
S
,
dl
F
/ds = 100 A/ms
ELECTRICAL CHARACTERISTICS:
STATIC P/N OM6011SA / OM6111SA
Parameter
BV
DSS
Drain-Source Breakdown
Voltage
V
GS(th)
I
GSSF
I
GSSR
I
GSS
I
DSS
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Gate-Body Leakage (OM6111)
Zero Gate Voltage Drain
Current
I
D(on)
On-State Drain
Voltage
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
Current
1
10
0.1
0.2
2.0
400
T
C
= 25° unless otherwise noted
ELECTRICAL CHARACTERISTICS:
Parameter
BV
DSS
Drain-Source Breakdown
Voltage
V
GS(th)
I
GSSF
I
GSSR
I
GSS
I
DSS
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Gate-Body Leakage (OM6112)
Zero Gate Voltage Drain
Current
I
D(on)
On-State Drain
Voltage
1
Current
1
8.0
3.2
0.8
0.1
0.2
2.0
500
T
C
= 25° unless otherwise noted
STATIC P/N OM6012SA / OM6112SA
Min. Typ. Max. Units Test Conditions
V
4.0
100
- 100
± 500
0.25
1.0
V
nA
nA
nA
mA
mA
A
3.4
0.85
V
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS,
I
D
= 250
mA
V
GS
= 20 V
V
GS
= - 20 V
V
GS
= ± 12.8 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 4 A
V
GS
= 10 V, I
D
= 4 A
V
GS
= 10 V, I
D
= 4 A,
T
C
= 125 C
V
DS(on)
Static Drain-Source On-State
R
DS(on)
Static Drain-Source On-State
Resistance
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
V
4.0
100
-100
± 500
0.25
1.0
V
nA
nA
nA
mA
mA
A
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
GS
= 20 V
V
GS
= - 20 V
V
GS
= ± 12.8 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 5 A
V
GS
= 10 V, I
D
= 5 A
V
GS
= 10 V, I
D
= 5 A,
T
C
= 125 C
Min. Typ. Max. Units Test Conditions
V
DS(on)
Static Drain-Source On-State
2.35 2.75
0.47 0.55
0.93 1.10
V
1.50 1.65
g
fs
C
iss
C
oss
C
rss
T
d(on)
t
r
T
d(off)
t
f
4.0
1150
165
70
17
12
45
30
S(W
)
V
DS
2 V
DS(on)
, I
D
= 5 A
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 175 V, I
D
@
5 A
R
g
= 5
W
, V
GS
= 10 V
(MOSFET) switching times are
essentially independent of
operating temperature.
g
fs
C
iss
C
oss
C
rss
T
d(on)
t
r
T
d(off)
t
f
4.0
1275
200
85
17
5
42
14
S(W
)
V
DS
2 V
DS(on)
, I
D
= 4 A
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 200 V, I
D
=
4 A
R
g
= 5
W
, V
GS
= 10 V
(MOSFET) switching times are
essentially independent of
operating temperature.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
V
SD
t
rr
Continuous Source Current
(Body Diode)
Source
Current
1
- 40
-2
530
A
V
ns
(Body Diode)
Diode Forward Voltage
1
Reverse Recovery Time
- 10
A
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
S
Continuous Source Current
(Body Diode)
Source
Current
1
-8
- 32
-2
700
A
A
V
ns
(Body Diode)
V
SD
t
rr
Diode Forward Voltage
1
Reverse Recovery Time
T
C
= 25 C, I
S
= -10 A, V
GS
= 0
T
J
= 150 C,I
F
= I
S
,
dl
F
/ds = 100 A/ms
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
(W )
(W )
3.1 - 81
DYNAMIC
Forward Transductance
1
DYNAMIC
Forward Transductance
1
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
OM6009SA - OM6112SA
S
T
C
= 25 C, I
S
= -18 A, V
GS
= 0
T
J
= 150 C,I
F
= I
S
,
dl
F
/ds = 100 A/ms
3.1
OM6009SA - OM6112SA
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Parameter
V
DS
V
DGR
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
V
GS
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
Junction To Case
Drain-Source Voltage
Drain-Gate Voltage (R
GS
= 1 M )
Continuous Drain Current
2
Continuous Drain Current
2
Pulsed Drain Current
1
Gate-Source Volt. (Unclamped Gate)
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
OM6009
OM6109
100
100
± 22
± 17
± 88
± 20
125
50
1.0
.020
OM6010
OM6110
200
200
± 18
± 11
± 72
± 20
125
50
1.0
.020
OM6011
OM6111
400
400
± 10
±6
± 40
± 20
125
50
1.0
.020
OM6012
OM6112
500
500
±8
±5
± 32
± 20
125
50
1.0
.020
Units
V
V
A
A
A
V
W
W
W/°C
W/°C
Junction To Ambient Linear Derating Factor
T
J
T
stg
Lead Temperature
Operating and
Storage Temperature Range
(1/16" from case for 10 secs.)
-55 to 150
300
-55 to 150 -55 to 150 -55 to 150
300
300
300
°C
°C
1 Pulse Test:
Pulse width 300 µsec. Duty Cycle 2%.
2 Package Pin Limitation = 25 Amps
THERMAL RESISTANCE
R
thJC
R
thJA
Junction-to-Case
Junction-to-Ambient
1.0
50
°C/W
°C/W
Free Air Operation
MECHANICAL OUTLINE
.144 DIA.
.940
.740
.260
MAX
.200
.100
2 PLCS.
.040
.545
.535
.050
.040
3.1
.290
.540
.250
.685
.665
.800
.790
.550
.530
.125 DIA.
2 PLS.
.540
.125
2 PLCS.
1 2 3
.500
MIN.
1
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
.150
2
3
.550
.510
.005
.150
.300
.040 DIA.
3 PLCS.
.045
.035
.150 TYP.
.260
.249
.150 TYP.
PACKAGE OPTIONS
MOD PAK
Z-TAB
6 PIN SIP
NOTE:
Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the part number.
Example - OMXXXXCSA MOSFETs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
FPGA/CPLD
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