OM6025SC OM6027SC OM6031SC
OM6026SC OM6028SC OM6032SC
POWER MOSFETS IN HERMETIC
ISOLATED JEDEC TO-258AA SIZE 6 DIE
400V Thru 1000V, Up To 26 Amp N-Channel,
Size 6 MOSFETs, High Energy Capability
FEATURES
•
•
•
•
•
•
Isolated Hermetic Metal Package
Size 6 Die, High Energy
Fast Switching, Low Drive Current
Ease of Paralleling For Added Power
Low R
DS(on)
Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits. This series also features avalanche high energy capability
at elevated temperatures.
MAXIMUM RATINGS
PART NUMBER
OM6025SC/OM6032SC
OM6026SC/OM6031SC
OM6027SC/OM6028SC
V
DS
400
500
1000
R
DS(ON)
.20
.27
1.30
I
D
(Amp)
24
22
10
3.1
SCHEMATIC
4 11 R2
Supersedes 1 07 R1
3.1 - 97
OM6025SC - OM6032SC
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Parameter
OM6025SC OM6026SC OM6027SC
OM6032SC OM6031SC OM6028SC
V
DS
V
DGR
I
D
@ T
C
= 25°C
I
DM
P
D
@ T
C
= 25°C
Drain-Source Voltage
Drain-Gate Voltage (R
GS
= 1 M )
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Derate Above 25°C Ambient
W
DSS
(1)
Single Pulse Energy
Drain To Source @ 25°C
T
J
T
stg
Lead Temperature
Operating and
Storage Temperature Range
(1/8" from case for 5 secs.)
-55 to 150
275
-55 to 150
275
-55 to 150
275
°C
°C
1000
1200
1000
mJ
400
400
24
92
165
.025
500
500
22
85
165
.025
1000
1000
10
40
165
.025
V
V
A
A
W
W/°C
Units
Note 1:
V
DD
= 50V, I
D
= as noted
THERMAL RESISTANCE
(MAXIMUM) at T
A
= 25°C
R
thJC
R
thJA
Junction-to-Case
Junction-to-Ambient
Derate above 25°C T
C
.76
40
1.32
°C/W
°C/W
W/°C
Free Air Operation
MECHANICAL OUTLINES
.695
.685
.550 .285
.530
.250
TYP
.
. 25
∅
1
2 PLACES
.045
.035
.165
.155
.695
.685
.270
.240
.045
.035
.250 TYP
.
125 TYP
.
.
.707
.697
.835
.815
3.1
.500
MIN.
. 45
1
REF
.
.200
.400
.940
±.002
.060 DIA. TYP.
3 PLACES
.140
.005
.550
.530
.092 MAX.
.270
MAX.
.750
.500
.065
.055
.140 TYP.
.005
.200 TYP.
OM6028SC, OM6031SC, OM6032SC
OM6025SC, OM6026SC, OM6027SC
PACKAGE OPTIONS
MOD PAK
6 PIN SIP
NOTE: MOSFETs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.
3.1 - 98
OM6025SC - OM6032SC
ELECTRICAL CHARACTERISTICS:
Characteristic
OM6025SC, OM6032SC
(T
C
= 25° unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (V
GS
= 0, I
D
= 0.25 mA)
Zero Gate Voltage Drain
(V
DS
= 400 V, V
GS
= 0)
(V
DS
= 400 V, V
GS
= 0, T
J
= 125° C)
Gate-Body Leakage Current, Forward (V
GSF
= 20 Vdc, V
DS
= 0)
Gate-Body Leakage Current, Reverse (V
GSR
= 20 Vdc, V
DS
= 0)
I
GSSF
I
GSSR
V
GS(th)
2.0
1.5
r
DS(on)
V
DS(on)
-
-
g
FS
C
iss
C
oss
C
rss
t
d(on)
(V
DD
= 250 V, I
D
=
24 A,
R
gen
= 4.3 ohms)
(V
DS
= 400 V, I
D
= 24 A,
V
GS
= 10 V)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
SD
(I
S
= 24 A, d/dt = 100 A/µs)
t
on
t
rr
-
14
-
-
-
5.4
5.4
-
mhos
-
3.0
-
-
4.0
3.5
0.20
Ohm
Vdc
V
(BR)DSS
I
DSS
-
-
-
-
-
-
-
-
0.25
1.0
100
100
nAdc
nAdc
400
-
-
Vdc
mAdc
ON CHARACTERISTICS
*
Gate-Threshold Voltage
(V
DS
= V
GS
, I
D
= 0.25 mAdc
(T
J
= 125° C)
Static Drain-Source On-Resistance (V
GS
= 10 Vdc, I
D
= 12 Adc)
Drain-Source On-Voltage (V
GS
= 10 Vdc)
(I
D
= 24 A)
(I
D
= 12 A, T
J
= 125° C)
Forward Transconductance (V
DS
= 15 Vdc, I
D
= 12 Adc)
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(V
DS
= 25 V, V
GS
= 0,
f = 1.0 MHz)
-
-
-
5600
78
230
-
-
-
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
-
-
-
-
-
-
-
70
190
160
160
110
20
55
-
-
-
-
140
-
-
nC
ns
SOURCE DRAIN DIODE CHARACTERISTICS
Forward On-Voltage
Forward Turn-On Time
Reverse Recovery Time
-
1.1
1.6
Vdc
ns
1000
**
500
ELECTRICAL CHARACTERISTICS:
Characteristic
OM6026SC, OM6031SC
(T
C
= 25° unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (V
GS
= 0, I
D
= 0.25 mA)
Zero Gate Voltage Drain
(V
DS
= 500 V, V
GS
= 0)
(V
DS
= 500 V, V
GS
= 0, T
J
= 125° C)
Gate-Body Leakage Current, Forward (V
GSF
= 20 Vdc, V
DS
= 0)
Gate-Body Leakage Current, Reverse (V
GSR
= 20 Vdc, V
DS
= 0)
I
GSSF
I
GSSR
V
GS(th)
2.0
1.5
r
DS(on)
V
DS(on)
-
-
g
FS
C
iss
C
oss
C
rss
t
d(on)
(V
DD
= 250 V, I
D
=
22 A,
R
gen
= 4.3 ohms)
(V
DS
= 400 V, I
D
= 22 A,
V
GS
= 10 V)
t
r
T
d(off)
t
f
Q
g
Q
gs
Q
gd
V
SD
(I
S
= 22 A, d/dt = 100 A/µs)
t
on
t
rr
-
13
-
-
-
8.0
8.0
-
mhos
-
3.0
-
-
4.0
3.5
0.27
Ohm
Vdc
V
(BR)DSS
I
DSS
-
-
-
-
-
-
-
-
0.25
1.0
100
100
nAdc
nAdc
500
-
-
Vdc
mAdc
ON CHARACTERISTICS
*
Gate-Threshold Voltage
(V
DS
= V
GS
, I
D
= 0.25 mAdc
(T
J
= 125° C)
Static Drain-Source On-Resistance (V
GS
= 10 Vdc, I
D
= 11 Adc)
Drain-Source On-Voltage (V
GS
= 10 Vdc)
(I
D
= 22 A)
(I
D
= 11 A, T
J
= 125° C)
Forward Transconductance (V
DS
= 15 Vdc, I
D
= 11 Adc)
Vdc
3.1
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(V
DS
= 25 V, V
GS
= 0,
f = 1.0 MHz)
-
-
-
5600
680
200
-
-
-
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
-
-
-
-
-
-
-
70
190
160
160
115
20
60
-
-
-
-
140
-
-
nC
ns
SOURCE DRAIN DIODE CHARACTERISTICS
Forward On-Voltage
Forward Turn-On Time
Reverse Recovery Time
-
1.1
1.6
Vdc
ns
1000
**
500
* Indicates Pulse Test = 300 µsec, Duty Cycle = 2%
** Limited by circuit inductance
3.1 - 99
OM6025SC - OM6032SC
ELECTRICAL CHARACTERISTICS:
Characteristic
OM6027SC, OM6028SC
(T
C
= 25° unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (V
GS
= 0, I
D
= 0.25 mA)
Zero Gate Voltage Drain
(V
DS
= 1000 V, V
GS
= 0)
(V
DS
= 1000 V, V
GS
= 0, T
J
= 125° C)
Gate-Body Leakage Current, Forward (V
GSF
= 20 Vdc, V
DS
= 0)
Gate-Body Leakage Current, Reverse (V
GSR
= 20 Vdc, V
DS
= 0)
I
GSSF
I
GSSR
V
GS(th)
2.0
1.5
r
DS(on)
V
DS(on)
-
-
g
FS
C
iss
C
oss
C
rss
t
d(on)
(V
DD
= 250 V, I
D
=
5 A,
R
gen
= 4.3 ohms)
(V
DS
= 400 V, I
D
= 10 A,
V
GS
= 10 V)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
SD
(I
S
= 10 A, d/dt = 100 A/µs)
t
on
t
rr
-
5.0
-
-
-
15
15.3
-
mhos
-
3.0
-
-
4.0
3.5
1.3
Ohm
Vdc
V
(BR)DSS
I
DSS
-
-
-
-
-
-
-
-
0.25
1.0
100
100
nAdc
nAdc
1000
-
-
Vdc
mAdc
ON CHARACTERISTICS
*
Gate-Threshold Voltage
(V
DS
= V
GS
, I
D
= 0.25 mAdc
(T
J
= 125° C)
Static Drain-Source On-Resistance (V
GS
= 10 Vdc, I
D
= 5 Adc)
Drain-Source On-Voltage (V
GS
= 10 Vdc)
(I
D
= 10 A)
(I
D
= 5 A, T
J
= 125° C)
Forward Transconductance (V
DS
= 15 Vdc, I
D
= 5 Adc)
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(V
DS
= 25 V, V
GS
= 0,
f = 1.0 MHz)
-
-
-
3900
300
65
-
-
-
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
-
-
-
-
-
-
-
40
100
100
100
100
20
40
-
-
-
-
140
-
-
nC
ns
SOURCE DRAIN DIODE CHARACTERISTICS
Forward On-Voltage
Forward Turn-On Time
Reverse Recovery Time
-
-
1.5
Vdc
ns
1000
**
600
* Indicates Pulse Test = 300 µsec, Duty Cycle = 2%
** Limited by circuit inductance
3.1
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