DISCRETE SEMICONDUCTORS
DATA SHEET
BFT92
PNP 5 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
November 1992
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
DESCRIPTION
PNP transistor in a plastic SOT23
envelope.
It is primarily intended for use in RF
wideband amplifiers, such as in aerial
amplifiers, radar systems,
oscilloscopes, spectrum analyzers,
etc. The transistor features low
intermodulation distortion and high
power gain; due to its very high
transition frequency, it also has
excellent wideband properties and
low noise up to high frequencies.
NPN complements are BFR92 and
BFR92A.
PINNING
PIN
1
2
3
base
emitter
collector
1
Top view
BFT92
DESCRIPTION
Code: W1p
fpage
3
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
C
P
tot
f
T
C
re
G
UM
F
d
im
PARAMETER
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
feedback capacitance
maximum unilateral power gain
noise figure
intermodulation distortion
up to T
s
= 95
°C;
note 1
I
C
=
−14
mA; V
CE
=
−10
V; f = 500 MHz
I
C
=
−2
mA; V
CE
=
−10
V; f = 1 MHz
I
C
=
−14
mA; V
CE
=
−10
V;
f = 500 MHz; T
amb
= 25
°C
I
C
=
−5
mA; V
CE
=
−10
V; f = 500 MHz;
T
amb
= 25
°C
I
C
=
−14
mA; V
CE
=
−10
V; R
L
= 75
Ω;
V
o
= 150 mV; T
amb
= 25
°C;
f
(p+q-r)
= 493.25 MHz
open emitter
open base
CONDITIONS
TYP.
−
−
−
−
5
0.7
18
2.5
−60
MAX.
−20
−15
−25
300
−
−
−
−
−
UNIT
V
V
mA
mW
GHz
pF
dB
dB
dB
Note
1. T
s
is the temperature at the soldering point of the collector tab.
November 1992
2
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
peak collector current
total power dissipation
storage temperature
junction temperature
f
>
1 MHz
up to T
s
= 95
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−65
−
MIN.
MAX.
−20
−15
−2
−25
−35
300
150
175
BFT92
UNIT
V
V
V
mA
mA
mW
°C
°C
THERMAL RESISTANCE
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector tab.
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to T
s
= 95
°C;
note 1
THERMAL RESISTANCE
260 K/W
November 1992
3
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
h
FE
f
T
C
c
C
e
C
re
G
UM
F
V
o
Notes
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
G
UM
S
21
-
=
10 log
-------------------------------------------------------------
dB.
2
2
1
–
S
11
1
–
S
22
2
BFT92
PARAMETER
collector cut-off current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
maximum unilateral power gain
(note 1)
noise figure
output voltage
CONDITIONS
I
E
= 0; V
CB
=
−10
V;
I
C
=
−14
mA; V
CE
=
−10
V
I
C
=
−14
mA; V
CE
=
−10
V;
f = 500 MHz
I
E
= i
e
= 0; V
CB
=
−10
V; f = 1 MHz
I
C
= i
c
= 0; V
EB
=
−0.5
V; f = 1 MHz
I
C
=
−2
mA; V
CE
=
−10
V; f = 1 MHz
I
C
=
−14
mA; V
CE
=
−10
V;
f = 500 MHz; T
amb
= 25
°C
I
C
=
−5
mA; V
CE
=
−10
V;
f = 500 MHz; T
amb
= 25
°C
note 2
MIN. TYP. MAX.
−
20
−
−
−
−
−
−
−
−
50
5
0.75
0.8
0.7
18
2.5
150
−50
−
−
−
−
−
−
−
−
UNIT
nA
GHz
pF
pF
pF
dB
dB
mV
2. d
im
=
−60
dB (DIN 45004B); I
C
=
−14
mA; V
CE
=
−10
V; R
L
= 75
Ω;
V
p
= V
o
at d
im
=
−60
dB; f
p
= 495.25 MHz;
V
q
= V
o
−6
dB; f
q
= 503.25 MHz;
V
r
= V
o
−6
dB; f
r
= 505.25 MHz;
measured at f
(p+q-r)
= 493.25 MHz.
November 1992
4
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFT92
MEA347
handbook, halfpage
24 V
handbook, halfpage
100
390
Ω
L3
3.9 kΩ
300
Ω
820
Ω
h FE
75
L2
680 pF
75
Ω
680 pF
L1
680 pF
75
Ω
DUT
50
25
16
Ω
MEA919
0
0
10
20
–I C (mA) 30
L2 = L3 = 5
µH
Ferroxcube choke, catalogue
number 3122 108 20150.
L1 = 4 turns 0.35 mm copper wire;
winding pitch 1 mm; internal diameter 4 mm.
V
CE
=
−10
V; T
j
= 25
°C.
Fig.2 Intermodulation distortion test circuit.
Fig.3
DC current gain as a function of collector
current.
MEA920
1
handbook, halfpage
Cc
(pF)
0.8
MEA344
handbook, halfpage
6
fT
(GHz)
4
0.6
0.4
2
0.2
0
0
10
–V CB (V)
20
0
0
10
20
–I C (mA) 30
I
E
= i
e
= 0; f = 1 MHz; T
j
= 25
°C.
V
CE
=
−10
V; f = 500 MHz; T
j
= 25
°C.
Fig.4
Collector capacitance as a function of
collector-base voltage.
Fig.5
Transition frequency as a function of
collector current.
November 1992
5
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