BFS481
NPN Silicon RF Transistor
4
For low-noise, high-gain broadband amplifier
at collector currents from 0.5 mA to 12 mA
f
T
= 8 GHz
F
= 1.4 dB at 900 MHz
Two (galvanic) internal isolated
Transistors in one package
C1
6
E2
5
B2
4
5
6
ESD
:
E
lectro
s
tatic
d
ischarge sensitive device, observe handling precaution!
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
1
T
is measured on the collector lead at the soldering point to the pcb
S
2For calculation of
R
please refer to Application Note Thermal Resistance
thJA
1
Junction - soldering point
2)
2
1
3
VPS05604
TR2
TR1
1
B1
2
E1
3
C2
EHA07196
Type
BFS481
Maximum Ratings
Parameter
Marking
RFs
Pin Configuration
Package
1=B 2=E 3=C 4=B 5=E 6=C SOT363
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
Value
Unit
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
S
12
20
20
2
20
2
175
150
-65 ... 150
-65 ... 150
V
mA
mW
°C
83 °C
1)
R
thJS
380
K/W
Jun-27-2001
BFS481
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 20 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 10 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 1 V,
I
C
= 0
DC current gain
I
C
= 5 mA,
V
CE
= 8 V
h
FE
50
100
200
-
I
EBO
-
-
1
µA
I
CBO
-
-
100
nA
I
CES
-
-
100
µA
V
(BR)CEO
12
-
-
V
Symbol
min.
Values
typ.
max.
Unit
2
Jun-27-2001
BFS481
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
AC characteristics
(verified by random sampling)
Transition frequency
I
C
= 10 mA,
V
CE
= 8 V,
f
= 500 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
Collector-emitter capacitance
V
CE
= 10 V,
f
= 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
Noise figure
I
C
= 2 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
f
= 900 MHz
f
= 1.8 GHz
Power gain, maximum stable
1)
I
C
= 5 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 900 MHz
Power gain, maximum available
2)
I
C
= 5 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
Transducer gain
|S
21e
|
2
,
-
-
15.5
10.5
-
-
I
C
= 5 mA,
V
CE
= 8 V,
Z
S
=
Z
L
= 50
f
= 900 MHz
f
= 1.8 GHz
1
G
ms
2
G
ma
Symbol
min.
f
T
C
cb
C
ce
C
eb
F
-
-
G
ms
-
6
-
-
-
Values
typ.
8
0.24
0.11
0.35
max.
-
0.4
-
-
Unit
GHz
pF
dB
1.45
1.8
19
-
-
-
G
ma
-
14.5
-
= |S
21
/
S
12
|
= |S
21
/
S
12
| (k-(k
2
-1)
1/2
)
3
Jun-27-2001
BFS481
Total power dissipation
P
tot
=
f
(T
S
)
200
mW
160
140
120
100
80
60
40
20
0
0
120
°C
P
tot
20
40
60
80
100
150
T
S
Permissible Pulse Load
R
thJS
=
f
(t
p
)
Permissible Pulse Load
P
totmax
/P
totDC
=
f
(t
p
)
10
3
10
2
K/W
P
totmax
/ P
totDC
-
10
2
10
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
R
thJS
10
1 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
10
0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
t
p
4
Jun-27-2001
BFS481
Collector-base capacitance
C
cb
=
f
(V
CB
)
Transition frequency
f
T
=
f
(I
C
)
V
CE
= Parameter
f
= 1MHz
0.4
pF
GHz
9
10V
0.3
7
8V
C
cb
6
0.25
f
T
5
5V
0.2
4
0.15
3
0.1
2
1
0
0
3V
2V
1V
0.7V
0.05
0
0
4
8
12
16
V
22
4
8
12
16
mA
24
V
CB
I
C
Power Gain
G
ma
,
G
ms
=
f(I
C
)
f
= 0.9GHz
V
CE
= Parameter
22
dB
10V
Power Gain
G
ma
,
G
ms
=
f(I
C
)
f
= 1.8GHz
V
CE
= Parameter
16
dB
5V
10V
18
16
12
3V
5V
G
G
10
3V
14
2V
8
2V
12
6
10
1V
8
0.7V
4
1V
6
4
0
2
0.7V
5
10
15
mA
25
0
0
5
10
15
mA
25
I
C
I
C
5
Jun-27-2001
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