BFS466L6
NPN Silicon RF TWIN Transistor
Preliminary data
•
Low voltage/ low current applications
•
Ideal for VCO modules and low noise amplifiers
•
Low noise figure: TR1: 1.1dB at 1.8 GHz
TR2: 1.0 dB at 1.8 GHz
•
World's smallest SMD 6-pin leadless package
•
Built in 2 transitors (TR1: die as BFR460L3,
TR2: die as BFR360L3)
$
6 4
#
6 4
"
4
5
6
1
2
3
!
ESD
:
E
lectro
s
tatic
d
ischarge sensitive device, observe handling precaution!
Type
BFS466L6
Maximum Ratings
Parameter
Marking
Pin Configuration
Package
AC
1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1
Symbol
V
CEO
4.5
6
V
CES
15
15
V
CBO
15
15
V
EBO
1.5
2
I
C
50
35
1
Sep-01-2003
Value
Collector-emitter voltage
TR1
TR2
Collector-emitter voltage
TR1
TR2
Collector-base voltage
TR1
TR2
Emitter-base voltage
TR1
TR2
Collector current
TR1
TR2
Unit
V
mA
BFS466L6
Maximum Ratings
Parameter
Base current
TR1
TR2
Total power dissipation
1)
TR1,
T
S
≤
104°C
TR2,
T
S
≤
102°C
Junction temperature
TR1
TR2
Ambient temperature
TR1
TR2
Storage temperature
TR1
TR2
Thermal Resistance
Parameter
Junction - soldering point
2)
TR1
TR2
1
T
is measured on the collector lead at the soldering point to the pcb
S
2For calculation of
R
thJA please refer to Application Note Thermal Resistance
Symbol
I
B
Value
5
4
Unit
mA
P
tot
mW
200
210
T
j
°C
150
150
T
A
-65 ... 150
-65 ... 150
T
stg
-65 ... 150
-65 ... 150
Symbol
R
thJS
≤
230
≤
230
Value
Unit
K/W
2
Sep-01-2003
BFS466L6
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Collector-emitter breakdown voltage
TR1,
I
C
= 1 mA,
I
B
= 0
TR2,
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
TR1,
V
CE
= 15 V,
V
BE
= 0
TR2,
V
CE
= 15 V,
V
BE
= 0
Collector-base cutoff current
TR1,
V
CB
= 5 V,
I
E
= 0
TR2,
V
CB
= 5 V,
I
E
= 0
Emitter-base cutoff current
TR1,
V
EB
= 0,5 V,
I
C
= 0
TR2,
V
EB
= 1 V,
I
C
= 0
DC current gain
TR1,
I
C
= 20 mA,
V
CE
= 3 V
TR2,
I
C
= 20 mA,
V
CE
= 3 V
h
FE
-
90
130
130
-
160
I
EBO
-
-
-
-
1
1
-
I
CBO
-
-
-
-
100
100
µA
I
CES
-
-
-
-
10
10
nA
V
(BR)CEO
4.5
6
5
9
-
-
µA
V
typ.
max.
Unit
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ. max.
AC Characteristics
(verified by random sampling)
Transition frequency
f
T
TR1,
I
C
= 30 mA,
V
CE
= 3 V,
f
= 1 GHz
TR2,
I
C
= 15 mA,
V
CE
= 3 V,
f
= 1 GHz
Collector-base capacitance
TR1,
V
CB
= 3 V,
f
= 1 MHz, emitter grounded
TR2,
V
CB
= 5 V,
f
= 1 MHz, emitter grounded
Collector emitter capacitance
TR1,
V
CE
= 3 V,
f
= 1 MHz, base grounded
TR1,
V
CE
= 3 V,
f
= 1 MHz, base grounded
Emitter-base capacitance
TR1,
V
EB
= 0,5 V,
f
= 1 MHz, collector grounded
TR2,
V
EB
= 0,5 V,
f
= 1 MHz, collector grounded
3
C
eb
C
ce
C
cb
Unit
GHz
16
11
-
-
-
-
-
-
22
14
0.33
0.3
0.17
0.17
0.57
0.48
-
-
pF
0.5
0.45
-
-
-
-
Sep-01-2003
BFS466L6
Electrical Characteristics
at TA = 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
AC Characteristics
(verified by random sampling)
dB
Noise figure
F
TR1,
I
C
=5mA,
V
CE
= 3 V,
f
= 1.8 GHz,
Z
S
=
Z
Sopt
TR1,
I
C
=5mA,
V
CE
= 3 V,
f
= 3 GHz,
Z
S
=
Z
Sopt
TR2,
I
C
=3mA,
V
CE
= 3 V,
f
= 1.8 GHz,
Z
S
=
Z
Sopt
TR2,
I
C
=3mA,
V
CE
= 3 V,
f
= 3 GHz,
Z
S
=
Z
Sopt
Power gain, maximum available
1)
TR1,
I
C
= 20 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
G
ma
-
-
-
-
1.1
1.4
1
1.4
-
-
-
-
-
-
-
-
|
S
21e
|
2
-
-
-
-
IP
3
14.5
10
14.5
10
-
-
-
-
TR1,
I
C
= 20 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 3 GHz
TR2,
I
C
= 15 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
TR2,
I
C
= 15 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 3 GHz
Transducer gain
TR1,
I
C
= 20 mA,
V
CE
= 3 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 1.8GHz
12.5
9
12.5
8.5
-
-
-
-
dBm
TR1,
I
C
= 20 mA,
V
CE
= 3 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 3GHz
TR2,
I
C
= 15 mA,
V
CE
= 3 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 1.8GHz
TR2,
I
C
= 15 mA,
V
CE
= 3 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 3GHz
Third order intercept point at output
2)
TR1,
V
CE
=3V,
I
C
=20mA,
Z
S
=
Z
L
=50
Ω,
f
=1.8GHz
TR2,
V
CE
=3V,
I
C
=15mA,
Z
S
=
Z
L
=50
Ω,
f
=1.8GHz
1dB Compression point, at output
TR1,
I
C
=20mA,
V
CE
=3V,
Z
S
=
Z
L
=50
Ω,
f
=1.8GHz
TR1,
I
C
=15mA,
V
CE
=3V,
Z
S
=
Z
L
=50
Ω,
f
=1.8GHz
-
-
P
-1dB
28
24.5
12
9
-
-
-
-
-
-
1
G
1/2
ma
= |
S
21e
/
S
12e
| (k-(k²-1) )
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50
Ω
from 0.1 MHz to 6 GHz
4
Sep-01-2003
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