BFS460L6
NPN Silicon RF TWIN Transistor
•
High
f
T
of 22 GHz
•
For low voltage / low current applications
•
Ideal for VCO modules and low noise amplifiers
•
Low noise figure: 1.1 dB at 1.8 GHz
•
World's smallest SMD 6-pin leadless package
•
Excellent ESD performance
•
Built in 2 transistors (TR1, TR2: die as BFR460L3)
* Short-term description
4
5
6
1
2
3
6
T R 1
5
T R 2
4
1
2
3
ESD: Electrostatic discharge
sensitive device, observe handling precaution!
Type
BFS460L6
Maximum Ratings
Parameter
Marking
Pin Configuration
Package
AB
1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1
Symbol
V
CEO
4.5
4.2
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
15
15
1.5
50
5
200
150
-65 ... 150
-65 ... 150
mW
°C
mA
Value
Unit
V
Collector-emitter voltage
T
A
> 0 °C
T
A
≤
0 °C
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
≤
104°C
Junction temperature
Ambient temperature
Storage temperature
1
T
is measured on the collector lead at the soldering point to the pcb
S
1
Jun-15-2004
BFS460L6
Thermal Resistance
Parameter
Junction - soldering point
1)
Symbol
R
thJS
Value
≤
230
Unit
K/W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 15 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 5 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 0.5 V,
I
C
= 0
DC current gain
I
C
= 20 mA,
V
CE
= 3 V, pulse measured
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
Unit
max.
-
10
100
1
160
V
µA
nA
µA
-
typ.
5.8
-
-
-
120
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
4.5
-
-
-
90
2
Jun-15-2004
BFS460L6
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
AC Characteristics
(verified by random sampling)
Transition frequency
f
T
I
C
= 30 mA,
V
CE
= 3 V,
f
= 1 GHz
Collector-base capacitance
V
CB
= 3 V,
f
= 1 MHz, emitter grounded
Collector emitter capacitance
V
CE
= 3 V,
f
= 1 MHz, base grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz, collector grounded
Noise figure
I
C
= 5 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt,
f
= 1.8 GHz
I
C
= 5 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt,
f
= 3 GHz
Power gain, maximum stable
1)
I
C
= 20 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
I
C
= 20 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 3 GHz
Transducer gain
I
C
= 20 mA,
V
CE
= 3 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 1.8 GHz
I
C
= 20 mA,
V
CE
= 3 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 3 GHz
Third order intercept point at output
2)
V
CE
= 3 V,
I
C
= 20 mA,
Z
S
=
Z
L
= 50
Ω
,
f
= 1,8 GHz
1dB Compression point at output
I
C
= 20 mA,
V
CE
= 3 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 1.8 GHz
1
G
1/2
ma
= |
S
21e
/
S
12e
| (k-(k²-1) ),
G
ms
= |
S
21e
/
S
12e
|
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50
Ω
from 0.1 MHz to 6 GHz
16
-
-
-
22
0.33
0.17
0.57
-
0.5
-
-
GHz
pF
C
cb
C
ce
C
eb
F
dB
-
-
1.1
1.4
-
-
dB
-
-
14.5
10
-
-
G
ms
|S
21e
|
2
-
-
IP
3
-
12.5
9
28
-
-
-
dBm
P
-1dB
-
12
-
3
Jun-15-2004
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