BFS17S
NPN Silicon RF Transistor
4
For broadband amplifiers up to 1 GHz at collector
currents from 1 mA to 20 mA
5
6
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
2)
R
thJS
1
T
is measured on the collector lead at the soldering point to the pcb
S
2For calculation of
R
please refer to Application Note Thermal Resistance
thJA
2
C1
6
E2
5
B2
4
3
1
VPS05604
TR2
TR1
1
B1
2
E1
3
C2
EHA07196
Type
BFS17S
Maximum Ratings
Parameter
Marking
MCs
Pin Configuration
Package
1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
P
tot
T
j
T
A
T
stg
Value
15
25
2.5
25
50
280
150
-65 ... 150
-65 ... 150
Unit
V
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current,
f
= 10 MHz
Total power dissipation
T
S
93 °C
1)
mA
mW
°C
240
K/W
1
Aug-20-2001
BFS17S
Electrical Characteristics
a
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-base cutoff current
V
CB
= 10 V,
I
E
= 0
V
CB
= 25 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 2.5 V,
I
C
= 0
DC current gain
I
C
= 2 mA,
V
CE
= 1 V
I
C
= 25 mA,
V
CE
= 1 V
Collector-emitter saturation voltage
I
C
= 10 mA,
I
B
= 1 mA
V
CEsat
h
FE
20
20
-
-
70
0.1
150
-
0.4
I
EBO
I
CBO
-
-
-
-
-
-
0.05
10
100
V
(BR)CEO
15
-
-
typ.
max.
Unit
V
µA
-
V
2
Aug-20-2001
BFS17S
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
AC characteristics
Transition frequency
I
C
= 2 mA,
V
CE
= 5 V,
f
= 200 MHz
I
C
= 25 mA,
V
CE
= 5 V,
f
= 200 MHz
Collector-base capacitance
V
CB
= 5 V,
f
= 1 MHz
Collector-emitter capacitance
V
CE
= 5 V,
f
= 1 MHz
Input capacitance
V
EB
= 0.5 V,
I
C
= 0 ,
f
= 1 MHz
Output capacitance
V
CE
= 5 V,
V
BE
= 0 ,
f
= 1 MHz
Noise figure
I
C
= 2 mA,
V
CE
= 5 V,
f
= 800 MHz,
Transducer gain
F
C
obs
C
ibo
C
ce
C
cb
f
T
typ.
max.
Unit
GHz
1
1.3
-
-
-
-
-
1.4
2.5
0.55
0.13
1.45
-
3.5
-
-
0.8
-
-
1.5
5
dB
pF
Linear output voltage
I
C
= 14 mA,
V
CE
= 5 V,
d
im
= 60 dB,
Third order intercept point
f
= 900 MHz
I
C
= 200 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
1
= 806 MHz,
f
2
= 810 MHz,
Z
S
=
Z
L
= 50
I
C
= 20 mA,
V
CE
= 5 V,
Z
S
=
Z
L
= 50
f
= 500 MHz
Z
S
= 0
|S
21e
|
2
-
12,7
-
,
V
01
=V
02
-
100
-
mV
IP
3
-
23
-
dBm
3
Aug-20-2001
BFS17S
Total power dissipation
P
tot
=
f
(T
S
)
300
mW
240
220
P
tot
200
180
160
140
120
100
80
60
40
20
0
0
20
40
60
80
100
120
°C
150
T
S
Permissible Pulse Load
R
thJS
=
f
(t
p
)
Permissible Pulse Load
P
totmax
/P
totDC
=
f
(t
p
)
10
3
K/W
10
3
P
totmax
/ P
totDC
-
10
2
10
2
10
1
10
0
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
R
thJS
10
1
10
-1 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
10
0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
t
p
4
Aug-20-2001
BFS17S
Collector-base capacitance
C
cb
=
f
(V
CB
)
f
= 1MHz
Transition frequency
f
T
=
f
(I
C
)
V
CE
= Parameter
1.3
pF
3.0
1.1
1.0
GHz
10V
5V
3V
C
cb
0.9
0.8
0.7
2.0
f
T
2V
1.5
0.6
0.5
0.4
0.3
1V
1.0
0.2
0.1
0.0
0
4
8
12
16
20
V
0.5
0.7V
26
0.0
0
5
10
15
20
mA
30
V
CB
I
C
5
Aug-20-2001
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